TF 451 Search Results

Irf640 irf9540

Abstract: IRFR220TF IRF510 mosfet irf640 451 MOSFET KSP44 IRFR9120-TF STR 456 2n3904 2n3906 KST2222ATF IRFR120TF
Contextual Info: PRODUCT INDEX ALPHA NUMERIC INDEX Power MOSFET S/STR Standard MOSFET PART NO. 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 KSP13 KSP2222A KSP27 KSP2907A KSP42 KSP44 KSP56 KSP92 KST10-TF KST2222A-TF KST2484-TF KST2907A-TF KST3904-TF KST3906-TF

M3329

Contextual Info: 023M Ä ft î ì m ft m n m & tf s ^ » m & M ä & 1,002,989 ^ & 71,233 8,221,441 fi m m 455,447 * 730,850 591,441 * * ^ M m ^ ft U » $• m 19,706 79,655 t m # & ; m ^ m © m ft » m 463,260 ^ U A Ä M æ » m ê i n s §i ^ & ^ ^ # M & tf S fi X ^ ^ ^ & tf « m

FFC 0.7mm pitch

Abstract: C5-21-32-A-10-4 CONDUCTOR you ad electronics stiffener FFC 2896
Contextual Info: TF Series Flexible Flat Cable, 0.50mm and 1.00mm Pitch Specifications Part Number Details Insulation Resistance: Conductor Resistance. TF 1,000MΩ min. at 500V DC C2 max. 300Ω / km C3 max. 850Ω / km C5 max. 940Ω / km C8 max. 430Ω / km Withstanding Voltage:

NEC D 809 F

Abstract: NEC D 809 L transistor NEC D 986 E7138
Contextual Info: DATA SHEET GaAs MES FET NE713 L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • Low noise figure NF = 0.6 dB TYP. a tf = 4G H z • High associated gain Ga = 14 dB TYP. a tf = 4 GHz • Gate width: Wg = 280 ^¡m • Gate Length: Lg = 0.3 ßm

MG300J1US1

Abstract: 1030rg
Contextual Info: GTR MODULE SILICON N CHANNEL IGBT MG300J1US1 HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. . High Input Impedance . High Speed : tf= 0. 35/is Max. trr=0. 25tis(Max.) . Low Saturation Voltage : VCEi(sat)=4.0V(Hax.) . Enhancement-?tode

MG25H2YS1

Contextual Info: MG25H2YS1 GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . High Input Impedance . High Speed : tf=1. Oys Max. trr=0- 5us(Max.) . Low Saturation Voltage : VcE(sat) = ' . Enhancement-Mode . Includes a Complete Half Bridge in One

TF2528S-402Y4R0-K1

Abstract: e9352 TF3233S-102Y10R0-K1 TF1320S TF4825S 222y TF3233S-601Y15R0-K1 TF3233S-251Y20R0-K1 E93-52 TF132
Contextual Info: 1/4 001-01 / 20011106 / e9352_tf.fm TF Series Common-Mode Choke Coils for AC Power Supply EMC Components Closed Magnetic Circuit, for Single Phase TF1028S TYPE SHAPES AND DIMENSIONS/CIRCUIT DIAGRAM 2 1 3 4 10±0.5 26max. 25±0.5 TYPICAL ELECTRICAL CHARACTERISTICS

2D 1002

Abstract: LP73 33m100 SG73 NV73D HV73 LA73 LT73 NT73 RK73
Contextual Info: PAD’S & SOLDERING PROFILE RECOMMENDED PAD DIMENSIONS FLAT TYPE COMPONENTS FOR REFLOW SOLDERING RK73 HV73 SG73 RN73 SR73 RK73N LT73 NT73 PT72 LA73 LP73 SDT73 RF73 KL73 UR73 UR73D TF Specifications given herein may be changed at any time without prior notice.

Contextual Info: 1 Who HEWLETT mLriM P a c k a r d 2 - 8 GHz Medium Power Gallium Arsenide FE T Technical Data A TF-45101 Features • High Output Power: 29.0 dBm Typical Pi ¿ 3 at 4 GHz • High Gain a t ldB Compression: 10.0 dB Typical Gj ¿ 3 at 4 GHz • High Power Efficiency:

TF2528S-402Y4R0-K1

Abstract: 702Y 2102Y
Contextual Info: 1/4 001-01 / 20011012 / e9352_tf.fm TF Series Common-Mode Choke Coils for AC Power Supply EMC Components Closed Magnetic Circuit, for Single Phase TF1028S TYPE SHAPES AND DIMENSIONS/CIRCUIT DIAGRAM 2 1 3 4 10±0.5 26max. 25±0.5 TYPICAL ELECTRICAL CHARACTERISTICS

FMMT451

Abstract: FMMT551 DSA003694
Contextual Info: FMMT451 0.8 IB1=IB2=IC/10 ns VCE=10V FMMT451 ISSUE 3 - OCTOBER 1995 ✪ FEATURES * Low equivalent on-resistance; RCE sat 400mΩ at 1A * 1 Amp continuous current * Ptot= 500 mW TYPICAL CHARACTERISTICS tf,tr,td SOT23 NPN SILICON PLANAR HIGH PERFROMANCE TRANSISTOR

TF6029

Contextual Info: 9352_TF 1/4 TF Series Common-Mode Choke Coils for AC Power Supply EMC Components Closed Magnetic Circuit, for Single Phase TF1028S TYPE SHAPES AND DIMENSIONS/CIRCUIT DIAGRAM 2 1 3 4 10±0.5 26max. 25±0.5 TYPICAL ELECTRICAL CHARACTERISTICS IMPEDANCE vs. FREQUENCY CHARACTERISTICS

Contextual Info: Ordering n u m b e r:E N 5363A 2SC5302 N0.5363A NPN Triple Diffused Planar Silicon Transistor Ultrahigh-Defmition Color Display Horizontal Deflection Output Applications Features • High speed tf= 100ns typ . • High breakdown voltage (Vcbo = 1500V). • High reliability (Adoption of HVP process).

FMMT451

Abstract: FMMT551
Contextual Info: FMMT451 0.8 IB1=IB2=IC/10 ns VCE=10V FMMT451 ISSUE 3 - OCTOBER 1995 ✪ FEATURES * Low equivalent on-resistance; RCE sat 400mΩ at 1A * 1 Amp continuous current * Ptot= 500 mW TYPICAL CHARACTERISTICS tf,tr,td SOT23 NPN SILICON PLANAR HIGH PERFROMANCE TRANSISTOR

14.5M 1982

Contextual Info: IRG4RC10U  ‚ 9 0% 10 % ƒ VC 9 0% Fig. 14b - Switching Loss t d off 10 % IC 5% Waveforms tf tr t d( on ) t=5µ s E on E o ff E ts = ( Eon +E off ) Package Outline D-PAK Outline Dimensions are shown in millimeters (inches) 2.38 (.094) 2.19 (.086) 6.73 (.265)

HEF4511BP

Abstract: U CD4511B MSM4511 UPD4511BAC CD4511B 4511B HCC4511B HEF4511 HD14511B M4511BAP
Contextual Info: 155 - 451 1B B C D to 7 Segm ent L a tch Decoder/Driver umm m A* ft* BCD 7-fe^ y h 3 X f- b 4 L mm • x á m it » a f f i * v+ v-r m VDD 5V t r 10V 15V m-ifn-y S3 tf • * v - H - n t y » L E D £ B $ * tK -S I> . # A * t 5 'y + * m S ilT ij9 , LED axfTl-v?

D207

Abstract: ansi y14.5m-1982 m 9936
Contextual Info: IR53H D XXX Lead Assignments 1 2 3 4 9 6 1 2 3 Vcc RT CT COM 6 7 9 VB VO V IN 7 4 9 Lead SIP without Leads 5 and 8 Vccuv+ V CLAMP 50% 50% HIN Vcc ton toff tr 90% RT tf 90% HO CT 10% 10% V+ VO VO Figure 2. Switching Time Waveform Definitions Figure 1. Input/Output Timing

NE674

Abstract: NE67483 NE67483B
Contextual Info: PRELIMINARY DATA SHEET_ M E C / G a A s / M E S f e t NE674 L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • Low noise figure N F = 1.4 dBTYP. a tf= 1 2 G H z • High associated gain G a = 1 0 dBTYP, a t f = 1 2 GHz • Gate width: Wg = 280 ¿¿m

NJM353D

Abstract: NJM353 NJM353M
Contextual Info: NJM353 2 Ü U E & A ‘J J - F E T A * u rn * < < 7 m > 7 ° m N JM 353«, A tl& tfS -F E T X -m i& Z titz X ^ T 's y 'tf 2 H 1 K A -? •Cl'ìto t&iU. {/ — U h, ^ ^ ¿11 ' ^ ^ L R ifF iI-S -fl, D / A 3 > / \ ' - i , - ^ > 7 ° ^ ^ —JU KSSS^OT-ftiitc felÈ A

applikation heft

Abstract: bauelemente DDR VEB M ik ro e le k tro n ik Scans-048 Mitteilungen ddr veb ddr bauelemente Rafena Schaltungen nf schaltungen
Contextual Info: KUN DEN DIEN ST M ITTEILU N G Ausgabe Juni 1965 îl p £ ¥ «s st* ci 8* ». .i » S s'| « 6 P* * «A P ° «t3* H* r * 13* ii ï o & » to '« « P 4 # tó co ft tf H fi H-*d » Q « ci* »3*4 * 5 -5 i K* H* et e t * • *•* si ! I* « fr* S i m h S» *

ED6A

Abstract: e91e ed9b E17A ed9a E5AF E2AF ea93 TOSHIBA ADDC ed4b
Contextual Info: TOSHIBA TLCS-870 V g y T 'tì, TLCS-870 > V - X f£JS Sii & f i ^ Ko TlEÎÈ L X t o 1 . 8.1 1 LD A, (x) ^ í y ^ fj Í0 8 H' -7 > t “ ÿ CDU - K l (ì-tf n T-x > ü fg ^ á b f) Í - t 0 f!l x. tì\ i co LD A, (x) ti, x #±Ü1îO^ -Ç V b ~r ^ K$%❖ jitf b b %

TMP93CS32

Abstract: TMP93CU44 TMP93CW44 TMP93PS44 TMP93PW32 TMP93PW44A
Contextual Info: LSii3 X t È itfiT ltR àiF flfrb jÈ g F flt x t à ^ rfijfflu § i c &y>fr t ì r s v 1 to zm m ñ tf & 4 ? n a y if o. — 9 L S I# to ^ # ¡ á , : 0 U l 6 l f 7 f 7 0 n 3 > f n - 7 y ' J - X'TLCS-900/Ltf TffiLSI ^i:ov»T, y^rAT-ÌT^f ^ h 'H o v ^T lS izË L * & ^"C -to

LM 4138

Abstract: HL 482 RAM 4163 cd 4162 GFIJ c 4161
Contextual Info: TO SH IB A TLCS-870/X V 3 y - t r í i , TLCS-870/X v V - X 1.10.1 t< flJ g S íift'íív ^ c o v i-c ia ili L T $¿3S/3£Í& B n ^ 1 LD A, (x) ^ í y ^ fj Í08H' -7 > t “ #±Ü liO ^ ï 'J fi-tf n f X h ÿ (?) n — ^ K$% ❖ j i t f b b %> f) t “ -tfn T-x M l f g H Í -9 i ¿ H i <0,

STMicroelectronics marking code date

Abstract: Date Code Marking STMicroelectronics ST MICROELECTRONICS DATE CODE MARKING sumitomo crm epoxy Part Marking STMicroelectronics Ablebond 8360 marking code stmicroelectronics ablestik 8360 device Marking STMicroelectronics 1076E
Contextual Info: PRODUCT/PROCESS CHANGE NOTIFICATION PCN MPG-EEP/04/451 FWH AND LPC FAMILY PLCC32 PACKAGE ENVIRONMENTAL FRIENDLY AND ASSEMBLY LOCATION CHANGE 2004/02/12 PCN MPG-EEP/04/451 Product Family /Commercial Product M50FW M50LPW M50FLW Type Of Change Multiple types of changes