TF 450 Search Results

Contextual Info: TO SHIBA SGR3000GXH26 TOSHIBA GATE TURN-OFF THYRISTOR REVERSE CONDUCTING TYPE SGR3000GXH26 Unit in mm INVERTER APPLICATION 2-03.5 + 0.2 Repetitive Peak Off-State Voltage V d RM = 4500V Note 1 l T ( R M S ) = 1200A(Tf=77°C) R.M.S On-State Current l R ( R M S ) = 900A(Tf=77°C)

sgr3000gxh28

Abstract: 4500V 900A
Contextual Info: TO SHIBA SGR3000GXH28 TOSHIBA GATE TURN-OFF THYRISTOR REVERSE CONDUCTING TYPE SGR3000GXH28 Unit in mm INVERTER APPLICATION • Repetitive Peak Off-State Voltage : VDRM“ 4500V Note 1 • R.M.S On-State Current : lT(RMS) = 1200A(Tf=77°C) • R.M.S Reverse Current ; I r (RMS) —900A (Tf=77°C)

HN4B101J

Contextual Info: HN4B101J TOSHIBA Transistor Silicon PNP / NPN Epitaxial Type PCT Process HN4B101J MOS Gate Drive Applications Switching Applications High-speed switching : PNP tf = 45 ns (typ.) : NPN tf = 50 ns (typ.) 1 2 5 0.4±0.1 VCE (sat) = 0.17 V (max) 1.9±0.2 VCE (sat) = −0.20 V (max)

toshiba gto

Abstract: GTO 100A 500V gto 100A GTO thyristor SGR3000GXH26 300a 1500v thyristor 300a 1000v thyristor 100a 1000v GTO GTO thyristor 4500V 4000A
Contextual Info: TOSHIBA SGR3000GXH26 TOSHIBA GATE TURN-OFF THYRISTOR REVERSE CONDUCTING TYPE SGR3000GXH26 Unit in mm INVERTER APPLICATION Repetitive Peak Off-State Voltage V d RM —4500V Note 1 R.M.S On-State Current It (RMS)= 1200A (Tf = 77°C) R.M.S Reverse Current I r (RMS) —900A (Tf = 77°C)

TF2 RELAY

Abstract: TF2-12V TF224
Contextual Info: TF SMALL POLARIZED RELAY WITH HIGH SENSITIVITY TF-RELAYS UL File No.: E43149; CSA File No.: LR26550 • High sensitivity: 80 mW Nominal operating power Single side stable 3-12 V type • Surge voltage withstand: 1500 V FCC Part 68 • Minimal magnetic interference allows high density mounting

LR26550

Contextual Info: TF SMALL POLARIZED RELAY WITH HIGH SENSITIVITY TF-RELAYS UL File No.: E43149; CSA File No.: LR26550 14 .551 9 .354 • High sensitivity: 80 mW Nominal operating power Single side stable 3-12 V type • Surge voltage withstand: 1500 V FCC Part 68 • Minimal magnetic interference allows high density mounting

latching relay

Abstract: 12v dc relay 8 pin 12V RELAY PIN DIAGRAM 5 pin relay 12v 5 V DC RELAY ac relay Matsushita polarized relay 7 pin RELAY 1500 V LR26550 TF224 8 pin SMD relay
Contextual Info: TF SMALL POLARIZED RELAY WITH HIGH SENSITIVITY TF-RELAYS UL File No.: E43149; CSA File No.: LR26550 14 .551 9 .354 • High sensitivity: 80 mW Nominal operating power Single side stable 3-12 V type • Surge voltage withstand: 1500 V FCC Part 68 • Minimal magnetic interference allows high density mounting

NEC D 809 F

Abstract: NEC D 809 L transistor NEC D 986 E7138
Contextual Info: DATA SHEET GaAs MES FET NE713 L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • Low noise figure NF = 0.6 dB TYP. a tf = 4G H z • High associated gain Ga = 14 dB TYP. a tf = 4 GHz • Gate width: Wg = 280 ^¡m • Gate Length: Lg = 0.3 ßm

Contextual Info: SOT223 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR td tr 1.8 tf IB1=IB2=IC/10 ns 1.6 VCE=-10V 160 1.4 ts 140 ns 1.2 1200 120 1.0 1000 100 0.8 tr td 20 IC/IB=10 0.001 0.01 0.1 1 10 C ABSOLUTE MAXIMUM RATINGS. 40 200 E FZT649 FZT749 B IC/IB=100 0.2 C tf 60 600

d191

Abstract: X2D11
Contextual Info: 40 E RO HM CO LTD . VTRÆJ IC /IC s for VTR Applications 7 ô 5 ô cl cn » S SRHÏ1 BU2770S — BU27703 ÜQQM6 ? ^ — "7 = 7 7 -2 j VTR Digital Servo • BU2770S (Í, VTFKD-tf-tf v X f A S 1 í 'f J F í ^ ü í S l / ’D im ension s (U n it : m m ) T'ÍSfiST'

Contextual Info: SGSF313 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . HIGH VOLTAGE CAPABILITY 450V VCEo . VERY HIGH SWITCHING SPEED: tf = 35ns TYPICAL AT lc = 2.5A, Ibi = 0.5A, VBEoff = -5V . LOW SATURATION VOLTAGE . COMPLETE CHARACTERIZATION AT 100 °C APPLICATION

wehrmacht

Abstract: Scans-0018019 RD12
Contextual Info: LORENZ RD12 Tf 7 5 W a tt- S e n d e trio d e fü r D e z im e te rw e lle n V o rlä u fig e A n g a b e n Angaben für Wehrmachtsentwicklungen sind den „Vorläufigen Technischen Lieferbedingungen für die Röhre RD 12 Tf" TL 24 b/7055 herausgegeben vom O.K.H. am 20. 11. 41 zu entnehmen.

BM11117

Abstract: TMP87PH48 TMP87PH48DF TMP87PH48U TOYOCOM PM48F
Contextual Info: TOSHIBA TMP87PH48/PM48 CMOS 8 b f ' y h V ' f ? n = l > h n - 7 TMP87PH48U/DF, TMP87PM48U/DF TMP87PH48 fä 128 K fcf y h , TMP87PM48 fä 256 K tf -y h <D 7 > 9 A PROM £ M L * ÜJÜ, Î b f l t ë 8fcf -7 h V > 7 ° ^ 4 ï U a y }¿ 3- - ? -Ü\ x * ROMPan OTMP87CH48/CM48 1 tf > n >

SGRB000GXH26

Abstract: 4500V 900A GTO thyristor 4500V 4000A
Contextual Info: SEMICONDUCTOR TOSHIBA TECHNICAL DATA TOSHIBA GATE TURN-OFF THYRISTOR SGRB000GXH26 REVERSE CONDUCTING TYPE SGR3000GXH26 Unit in mm INVERTER APPLICATION Repetitive Peak Off-State Voltage V d RM = 4500V (Note 1) R.M.S On-State Current lT(RMS) = 1200A(Tf=77°C)

SGS ISOWATT221

Abstract: SGSF313 SGSF313PI
Contextual Info: SGSF313 SGSF313PI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ ■ HIGH VOLTAGE CAPABILITY 450V VCEO VERY HIGH SWITCHING SPEED: tf = 35ns TYPICAL AT IC = 2.5A, IB1 = 0.5A, VBEoff = -5V LOW SATURATION VOLTAGE COMPLETE CHARACTERIZATION AT 100 oC

87CH46

Abstract: 87PH46N TMP87PH46N 32768kHz TMP87PH47LU TMP87PH47U BM1193 87c846 TMP87
Contextual Info: TOSHIBA TM P87PH46/47/47L CMOS 8 b f ' y h V ' f ? n = l > h n - 7 TMP87PH46N, TMP87PH47Uf TMP87PH47LU 8 7 P H 4 6 / 4 7 / 4 7 L i á 1 2 8 K fcf y n > tf a. - * T* , 87P H 46N 8 7 C 4 4 7 /8 4 7 /H 4 7 /8 4 7 L /H 4 7 L ¿ h 7 > iä ^ * X tf > a A PR O M

SGS ISOWATT221

Abstract: SGSF313 SGSF313PI SGSF 495 tf 164
Contextual Info: SGSF313 SGSF313PI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS • ■ ■ ■ ■ HIGH VOLTAGE CAPABILITY 450V VCEO VERY HIGH SWITCHING SPEED: tf = 35ns TYPICAL AT IC = 2.5A, IB1 = 0.5A, VBEoff = -5V LOW SATURATION VOLTAGE COMPLETE CHARACTERIZATION AT 100 oC

transistor ad 1v

Abstract: SGSF313
Contextual Info: SGSF313  HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ HIGH VOLTAGE CAPABILITY 450V VCEO VERY HIGH SWITCHING SPEED: tf = 35ns TYPICAL AT IC = 2.5A, IB1 = 0.5A, VBEoff = -5V LOW SATURATION VOLTAGE COMPLETE CHARACTERIZATION AT 100 oC

c5368

Abstract: transistor npn C536 2SC5368
Contextual Info: 2SC5368 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5368 High-Voltage Switching Applications Switching Regulator Applications Unit: mm DC-DC Converter Applications • High speed: tr = 0.5 µs max , tf = 0.3 µs (max) (IC = 0.8 A) • High breakdown voltage: VCEO = 450 V

Contextual Info: 2SC5368 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5368 High-Voltage Switching Applications Switching Regulator Applications Unit: mm DC-DC Converter Applications • High speed: tr = 0.5 µs max , tf = 0.3 µs (max) (IC = 0.8 A) • High breakdown voltage: VCEO = 450 V

C5368

Abstract: 2SC5368 transistor npn C536 transistor C536
Contextual Info: 2SC5368 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5368 High-Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications Unit: mm • High speed: tr = 0.5 s max , tf = 0.3 μs (max) (IC = 0.8 A) • High breakdown voltage: VCEO = 450 V

c5368

Abstract: transistor npn C536 transistor C536 2SC5368 C536* transistor
Contextual Info: 2SC5368 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5368 High-Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications Unit: mm • High speed: tr = 0.5 s max , tf = 0.3 μs (max) (IC = 0.8 A) • High breakdown voltage: VCEO = 450 V

c5368

Contextual Info: 2SC5368 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5368 High-Voltage Switching Applications Switching Regulator Applications Unit: mm DC-DC Converter Applications • High speed: tr = 0.5 µs max , tf = 0.3 µs (max) (IC = 0.8 A) • High breakdown voltage: VCEO = 450 V

c5351

Abstract: 2SC5351
Contextual Info: 2SC5351 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5351 High-Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications Unit: mm • High speed: tr = 0.5 s max , tf = 0.3 μs (max) (IC = 0.8 A) • High breakdown voltage: VCEO = 450 V