TESLA SWITCH Search Results

Contextual Info: SPECIFICATIONS base unit* Frequency range Min Frequency range Max Range electrical field [V/m] typical Min (1D) Range electrical field [V/m] (typical) Max (1D) Range magnetic field [Tesla] (typical) Min (3D!) Range magnetic field [Tesla] (typical) Max (3D!)

KF520

Abstract: KT725 diac kr 206 KT707 KD502 kt201 KT206-200 KU607 KYS 30 40 diode KT784
Contextual Info: TESLA ECIMEX, a. s. T E /1 \L /I Sem iconductor Discrete Devices Sem iconductor Discrete Devices CONTENTS . 3 TRANSISTORS. 5

Tesla sensor

Abstract: TESLA 1 alnico
Contextual Info: APPLICATION DATA Solid State Sensors Magnet Conversion Chart MULTIPLICATION FACTORS From Gauss Tesla Millitesla Weber/Inch2 Weber/Meter2 Line/Inch2 Gammas 1 1 1 0 .0 1.550 1 X 104 1.55 1 X 10-5 Tesla 1 X 1 0 -“ 1 1.5500 X 103 1 X 10“ 9 Millitesla 0.1 1

Contextual Info: APPLICATION DATA Solid State Sensors Magnet Conversion Chart MULTIPLICATION FACTORS From Millitesla Weber/Inch2 1x10" 1 0 .0 1 .5 5 0 X 1 0 7 1 1 X I 0 -3 1 .5 5 0 0 X 1 0 3 Gauss Tesla To: Gauss 1 Tesla 1 X 1 0 -4 Line/Inch2 Gammas 1 X 104 1 .5 5 X 1 0 7

gaussmeter probe

Abstract: PSRI STB1X-0201 gaussmeter hall effect 5vdc
Contextual Info: 5100 Series Hall Effect Gauss / Tesla Meters The 5100 Series Hall effect portable gaussmeters represent the most recent design from the world leader in magnetic measuring equipment. This new design incorporates the use of digital signal processing technology

ADVANCED ANALOGIC TECHNOLOGY

Abstract: MRI rf amplifier analogic device power supply
Contextual Info: AN8101 5 kW RF Power Amplifier for Pulsed RF Service Introduction The all-solid-state AN8101 Radio Frequency Power Amplifier meets the stringent performance standards required by magnetic resonance imaging MRI scanners with magnetic field strengths from 0.15 to 1.0 Tesla. The AN8101 is a

tesla coil

Abstract: "Reed Switch" tesla switch AN102A Helmholtz Coil Gauss method magnetic flux density for different material MAGNETIC REED SWITCH MDCG-4 magnet "1 gauss"
Contextual Info: Application Note AN102A Ampere*turn versus mT and Gauss What is the relationship between AT Ampere*turn and Tesla or Gauss? What magnet strength will activate a 15 AT reed switch at 5 mm? There is not an answer that is both simple and accurate. Because the reed switch is made of ferrous material, it affects the magnetic field into

ugn3013

Abstract: D2903 tesla switch TL3013C TESLA transistor
Contextual Info: TL3013C SILICON HALL-EFFECT SWITCH D2903, SEPTEMBER 1 98 5 -R E V ISE D APRIL 1988 Magnetic-Field Sensing Hall-Effect Input LU P A C K A G E ITO P V IEW On-Off Hysteresis Small Size Standard Bipolar Technology Minimizes ESD Susceptibility • lOL • • ■ 20 mA Min at V o L “ 0.4 V

TESLA transistor

Abstract: ugn3040 UGN-3040
Contextual Info: ADVANCE INFORMATION TL3040C SILICON HALL EFFECT SWITCH D 2903, O CTO BER 1985 • Magnetic-Field Sensing Hall-Effect Input • On-Off Hysteresis • Small Size • Standard Bipolar Technology Minimizes ESD Susceptibility • lOL - • • 20 mA Min at V o l = 0-4 V

TL3019

Abstract: TESLA transistor TL3019C UGN3019 D2903 Tesla sensor
Contextual Info: TL3019C SILICON HALL EFFECT SWITCH D2903, JULY 1 9 8 5 — REVISED APRIL 1988 Magnetic-Field Sensing Hall-Effect Input LU P A C K A G E TOP VIEW On-Off Hysteresis • Small Size • Standard Bipolar Technology Minimizes ESD Susceptibility • Io l • • ■ 20 mA Min at V o L “ 0-4 V

UGN-3040

Abstract: ugn3040 Tesla transistor tesla switch TESLA Manufacturer Tesla sensor TL3040C magnetic flux density for different material D2903 direct replacement
Contextual Info: ADVANCE INFORMATION TL3040C SILICON HALL EFFECT SWITCH D 2 9 0 3 , OCTOBER 1 9 8 5 LU PACKAGE TOP VIEW Magnetic-Field Sensing Hall-Effect Input O n -O ff Hysteresis Small Size k \ Standard Bipolar Technology Minimizes ESD Susceptibility lOL - • • 2 0 m A Min at V o l = 0 -4 V

A3121 8 pin

Abstract: A3144E UGN3019 ugn3020 ugn3020 hall effect device A3121 ugn3040 UGN3120U A3144 hall effect A3144
Contextual Info: FAQ from Unipolar Hall-Effect Digital Switches A3121/2/3, A3141/2/3/4 E LL G Most Frequently Asked Questions (FAQ) A R O MicroSystems, Inc. 1. I am trying to replace UGN3120U in my application. What do you recommend? We recommend using A3144EU because the operate point range is 70 to 350 gauss

TL172

Abstract: TL172C
Contextual Info: TL172 C N O R M A LLY O FF SILICON H A LL-EFFEC T SW ITCH D2490, AUGUST 1977-RE VIS E D APRIL 1988 • Magnetic-Field Sensing Hall-Effect Input • On-Off Hysteresis • Small Size • Solid-State Technology • Open-Collector Output • Normally Off Switch

tl170 hall effect

Abstract: tl170 hall TL170C TL170 CT SENSOR AX2535
Contextual Info: TL170C SILICON HALL-EFFECT SWITCH • Magnetic-Fleld Sensing Hall-Effect Input • On-Off Hysteresis • Small Size • Solid-State Technology • Open-Coilector Output D24Q8, DECEMBER 1977. REVISED APRIL 1988

tl3101

Abstract: Tesla transistor TL31011 TL3101C 0/TL3101
Contextual Info: TL3101I, TL3101C SILICON HALL-EFFECT SWITCH APRIL 1985— REVISED APRIL 1988 • Magnetic-Field Sensing Hall-Effect Input • On-Off Hysteresis • Small Size • Solid-State Technology • Open-Collector Output • Buried Hall-Effect Cell Reduces Threshold

TL170

Abstract: TL170C TESLA transistor l170c TL 170C
Contextual Info: TL170C SILICON HALL-EFFECT SWITCH D 2 4 0 8 , DECEMBER 1 9 7 7 , REVISED APRIL 1 9 8 8 • Magnetic-Field Sensing Hall-Effect Input • On-Off Hysteresis • Small Size • Solid-State Technology • Open-Collector Output description The TL 170C is a low-cost magnetically operated

tl3101

Abstract: TL3101C TL3101I TESLA transistor
Contextual Info: TL3101I, TL3101C SILICON HALL-EFFECT SWITCH A P R IL 1 9 8 5 — R E V I S E D A P R IL 1 9 8 8 • Magnetic-Field Sensing Hall-Effect Input • On-Off Hysteresis • Small Size • Solid-State Technology • Open-Collector Output • LU P A C K A G E T O P V IE W

Ferroxcube 3C8

Abstract: 204T250-3C8 pulse transformer driver ic Amp. mosfet 1000 watt MPS-U10 application note gate driver for h bridge mosfet core 3c8 U 126 204T250 ac step-up transformer winding awg
Contextual Info: U-127 APPLICATION NOTE UNIQUE CHIP PAIR SIMPLIFIES ISOLATED HIGH SIDE SWITCH DRIVE John A. O’Connor Application Engineer Motor Control Circuits Abstract High voltage, high current N-channel MOSFETs, now widely accepted in the industry, have found their way into numerous high power designs. As their cost to performance ratio continually improves, gate drive

Ferroxcube 3C8

Abstract: U-127 204T250-3C8 Dual secondary Transformer UNITRODE U-124 Unitrode U-127 CURRENT TRANSFORMER Isolated mosfet gate drive circuit Amp. mosfet 1000 watt coupler MOSFET DRIVER application note
Contextual Info: U-127 APPLICATION NOTE UNIQUE CHIP PAIR SIMPLIFIES ISOLATED HIGH SIDE SWITCH DRIVE John A. O’Connor Application Engineer Motor Control Circuits Abstract High voltage, high current N-channel MOSFETs, now widely accepted in the industry, have found their way into numerous high power designs. As their cost to performance ratio continually improves, gate drive

ct scanner

Abstract: .01 uf disc capacitor EUROFARAD capacitor datasheet EUROFARAD ceramic capacitor nova* kemet ceramic capacitor SSQ21113 murata Ceramic Disc Capacitors SCR SN 101 hv20 "x-ray generator"
Contextual Info: Index Test Requirements . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4 High Voltage/High Temperature Series . . . . . . . . . . . . . . . . . . . . . .5 High Temperature Ceramic Cases Series C3 . . . . . . . . . . . . . . . .6

EER2834

Abstract: RCD snubber forward converter KA5M0380R application note offline forward converter KA5L0380R. Application NOTE KA5L0380R. Application v2490 FS7M0880 smps transformer pc FS7M0680
Contextual Info: www.fairchildsemi.com Application Note AN4134 Design Guidelines for Off-line Forward Converters Using Fairchild Power Switch FPSTM Abstract This paper presents practical design guidelines for off-line forward converter employing FPS (Fairchild Power Switch).

gaussmeter

Abstract: gaussmeter probe HS-AGB5-4805 MNT-4E04-VG HS-STF99-0402 SAD58-1904 MMA-2508-VH HS-TB51 HS-STM99-0402 MNT-4E04-VH
Contextual Info: Gaussmeter Probes for FH 26, FH 27, FH 46, FH 47 Description Our gaussmeter probes are designed to meet the electrical and mechanical requirements of virtually any application. Models are available for transverse lines of flux moving perpendicular through the probe tip and axial (magnetic lines of flux moving through the length of the probe) measurements. Cryogeni, magnaprobe and multi-axis probes are also available.

AN3525

Abstract: magnetic flow meter MAGNETIC METER tesla coil MR2A16A 104Gauss tesla semiconductor
Contextual Info: Freescale Semiconductor Application Note AN3525 Rev. 0, 11/2007 Impact of External Magnetic Fields on MRAM Products by: Jason Janesky Freescale Semiconductor Austin, TX 1 Introduction This application note discusses magnetic fields, the sources and magnitudes of magnetic fields, and their

tesla coil

Abstract: analog integrator D-50996 magnetic field measuring "IEEE-488 GPIB" ieee-488 gpib usb search-coil electronic measuring weight quality control MAGNET-PHYSICS
Contextual Info: www.magnet-physik.de Page 1 / 2 ELECTRONIC FLUXMETER EF 14 EF 14 • Description The Electronic Fluxmeter EF 14 is designed to measure the magnetic flux using measuring coils. It comprises a precise analog integrator of high sensitivity and low drift. Key features: