TES 3012 Search Results

Contextual Info: TES Low ESR – QPL ESCC Low ESR Tantalum Chip Capacitor • QPL ESCC approved series • Manufactured in EU, ESA qualified plant, according to ESCC 3012 • Detailed specification 3012/004 • Low ESR designed parts, multianode D and E case included • Robust against higher thermo-mechanical stresses during assembly process

Contextual Info: TES Low ESR - EPPL 2 Low ESR Tantalum Chip Capacitor • EPPL 2 ESCC approved series • Manufactured in EU, ESA qualified plant, according to ESCC 3012 • Detailed specification 3012/004 • Low ESR designed parts, multianode D and E case included • Robust against higher thermo-mechanical stresses during assembly process

tes 3012

Abstract: ESCC3012
Contextual Info: TES Low ESR - EPPL 2 Low ESR Tantalum Chip Capacitor • EPPL 2 ESCC approved series • Manufactured in EU, ESA qualified plant, according to ESCC 3012 • Detailed specification 3012/004 • Low ESR designed parts, multianode D and E case included • Robust against higher thermo-mechanical stresses during assembly process

TES 262

Abstract: capacitor 226 20V 476 capacitor 10 k e106050 B0035 tes 3012 E0065 D0055 TES 165 d0045
Contextual Info: TES Low ESR - EPPL 2 Low ESR Tantalum Chip Capacitor • EPPL 2 ESCC approved series • Manufactured in EU, ESA qualified plant, according to ESCC 3012 • Detailed specification 3012/004 • Low ESR designed parts, multianode D and E case included • Robust against higher thermo-mechanical stresses during assembly process

b626

Contextual Info: 2 4 6 7 REVISIONS ISS ZONE DESCRIPTION\PER REGUEST\DATE 5.5 — F F RECOMMENDED C A B L E S T R I P P I N G D I M ’S E E D D 1 HE C C N O TES FINISH PLATING THICKNESS IN MICRO-INCHES) 1 BRAS5 PER QQ- B—626 2 . BRASS PER GG- B—613 NICKEL P L 100 MIN, THICK OVER COPPER 5TRIKE

PAN 3501

Abstract: 740004 28X28
Contextual Info: 3 4 REVISIONS ISS DESCRIPTIONS^ ER REQUEST\DATE ZONE RECOMMENDED C A B L E S T R IP P IN G Dl CRIMPED FERRU LE HEX CRIMP SIZE .1 7 8 ” CRIMPED CONTACT PIN HEX CRIMP SIZE .0 6 8 ” MAX. PAN EL TH IC K N E S S = 3 .5 m m 6 HE N O TES 1 2 3 4 5 FINISH PLATING THICKNESS IN MICRO-INCHES

Contextual Info: 4 6 7 REVISIONS I5S D ESC RI PTI0 N\PER REQUEST\DATE ZONE RECOMMENDED CABDE STRIPPING D I M ’S RECOMMENDED 6 PE MOUNTING HOLE CD 'S 1.8 N O TES; 1. 2 3. +. 5, F IN IS H P L A T IN G T H IC K N E S S IN M IC R O - IN C H E S BRASS P ER Q Q - B - 6 2 6

Contextual Info: DIMENSIONS In m .M . DO NOT SCALE PRINT R E V IS IO N S p LTR D E S C R IP T IO N F1 n o tes 1. DATE E C R -0 8 -0 1 5 3 0 4 DWN 30-12-08 APVD AEG WRV : CONTACT IS DESIGNED FOR FLEXIBLE ETCHED CIRCUITS ACC. TO VDO-SPEC. M V -4 5 1 1 . T H IS PftR T N R . TO B E ORDERED WHEN TH E GERMAN X -Y APPLICATION

STR 30120

Abstract: 223U
Contextual Info: 5 4 2 7 REVISIONS ISS ZONE DE5CRIPTI0N\PER REQUEST\DATE F RECOM M ENDED CABLE STR IP P IN G DIM ’S E D c N O TES: I . 2. 3 4. F IN IS H 'PLATIN G T H IC K N E S S IN M IC R O —IN C H E 5 BRASS PER Q Q - B - 6 2 6 N IC K E L P L. 1 0 0 M IN . THICh O V E R C O P P E R S T R IK E

TSR 1-2450

Abstract: TMR 6-2411WI 12-0-12 transformer 500ma TRACOPOWER ten 5-1211 TEN 3-1213 TRACO POWER traco tma 1212d traco ten5 application note TSR 3-2450 tmr2e TEP-160
Contextual Info: Company Profile TRACO ELECTRONIC AG is a Swiss company with headquarter based in Zurich, Switzerland. As a leading power supply specialist with more than 30 years of experience we are dedicated to the design and manufacturing of high quality DC/DC and AC/DC

Contextual Info: ISSI' IS 4 2 S 1 6 1 2 8 128K Words x 16 Bits x 2 Banks 4-MBIT SYNCHRONOUS DYNAMIC RAM FEATURES ADVANCE INFORMATION DECEMBER 1997 DESCRIPTION Clock frequency: 100 MHz Two banks can be operated simultaneously and independently Single 3.3V power supply ISSI's 4Mb Synchronous DRAM IS42S16128 is organized as

Contextual Info: IS 4 2 S 1 6 1 0 0 512K Words x 16 Bits x 2 Banks 16-MBIT SYNCHRONOUS DYNAMIC RAM ADVANCE INFORMATION JULY 1999 DESCRIPTION FEATURES C lock frequency: 1 6 6 ,1 4 3 , 125, 100 MHz Fully synchronous; all signals referenced to a positive clock edge Two banks can be operated sim ultaneously and

Contextual Info: ISSI' IS 4 2 S 1 6 1 2 8 256K x 16 4-MBIT SYNCHRONOUS DYNAMIC RAM ADVANCE INFORMATION SEPTEMBER 1997 FEATURES DESCRIPTION • Clock frequency: 100 MHz ISSI's 4Mb Synchronous DRAM IS42S16128 is organized as a 131072-word x 16-bit x 2-bank for improved performance.

TRACOPOWER ten 5-1211

Abstract: traco ten5 application note traco tma 1212d TRACO POWER TEL 3-0522 tracopower ESP 36-24SN TEL 5-2411 SMD MARKING CODE AH smd marking a60 ESP 18-05SN traco power 5-2423
Contextual Info: Company Profile TRACO ELECTRONIC AG is a Swiss company with headquarters based in Zurich, Switzerland. As a leading power supply specialist with more than 30 years of experience we are dedicated to the design and manufacturing of high quality DC/DC and AC/DC power conversion products. We are

Contextual Info: ISSI' IS 4 2 S 1 6 1 2 8 ADVANCE INFORMATION MAY 1998 128K Words x 16 Bits x 2 Banks 4-MBIT SYNCHRONOUS DYNAMIC RAM FEATURES DESCRIPTION Clock frequency: 100 MHz Two banks can be operated simultaneously and independently Single 3.3V power supply ISSI's 4Mb Synchronous DRAM IS42S16128 is organized as

Contextual Info: IS 4 2 S 1 6 1 0 0 512K Words x 16 Bits x 2 Banks 16-MBIT SYNCHRONOUS DYNAMIC RAM ISSI ADVANCE INFORMATION SEPTEMBER 1998 DESCRIPTION FEATURES Clock frequency: 100 MHz Fully synchronous; all signals referenced to a positive clock edge Two banks can be operated simultaneously and

A2XD

Abstract: Silicon Integrated System IS42S16128 kjg x6 0020665
Contextual Info: ISSI’ IS 4 2 S 1 6 1 2 8 _ 12ÔK Words x 16 Bits x 2 Banks 4-MBIT SYNCHRONOUS DYNAMIC RAM FEATURES ADVANCE INFORMATION DECEMBER 1997 DESCRIPTION Clock frequency: 100 MHz Two banks can be operated simultaneously and independently Single 3.3V power supply

HRC5000

Contextual Info: Tantalum and Niobium Road Map Tantalum SMD Chip Standard TAJ Commercial TAJ Low Profile F93 F92 Low Profile F95 Conformal TAJ Automotive F93-AJ6 Professional TRJ F97 Low ESR TPS Low ESR Polymer TCJ TCM Multianode TCN Undertab TPM Ultra Low ESR F91 F38 TPS

Contextual Info: ADVANCE MT20D840 8 MEG x 40 DRAM MODULE I^ IC Z R O N DRAM _ MODULE 8 MEG x 40 DRAM FAST-PAGE-MODE PIN ASSIGNMENT Top View • • • • • Industry-standard 72-pin single in-line package High-performance CMOS silicon-gate process Single 5V ±10% power supply

Contextual Info: ADVANCE MICRON 1 4 MEG DRAM •MODULE 36, 8 MEG X 4 MEG X X MT12D436 18 DRAM MODULE 36, 8 MEG 18 X FAST-PAGE-MODE FEATURES • Industry-standard pinout in a 72-pin single-in-line package • High-performance CM OS silicon-gate process • Low profile 1.00" height DM and DG packages only

TMS3012

Abstract: TO100 package 8 bit shift register
Contextual Info: • ■ T M S 3012 JC, N C -D U A L 128-BIT ACCUMULATOR MOS LSI r TM S 3028 LC-DUAL 128-BIT SHIFT REGISTER ■n m features 03 30 c > • 256 bits of storage • Single clock phase n < • Static logic tO • T T L compatible • DC to 1 MHz operation • Push-pull output buffers

tdq4-M

Abstract: HP 2231 IS42S16128
Contextual Info: 28 i 256K x 16 4-MBIT SYNCHRONOUS DYNAMIC RAM ADVANCE INFORMATION JUNE 1997 FEATURES DESCRIPTION • Clock frequency: 100 MHz • Two Bank internal structure: ISSI's 4Mb Synchronous DRAM IS42S16128 is organized as a 131072-word x 16-bit x 2-bank for improved performance.

M 50556

Abstract: 50556 act mx hf nu
Contextual Info: [Ordering number : EN5055A ~| CMOS LSI No. 5055A SAXYO L C 3 8 2 1 6 1 T - 1 7 2 MEG 65536 words x 16 bits x 2 banks Synchronous DRAM Overview Package Dimensions The LC382I61T is a 3.3 V single-voltage power supply unit: mm synchronous D RAM s with a 65536-word x 16-bii x 2-

V11J

Abstract: ba7k 500C LC382161T-17
Contextual Info: [Ordering number : EN5055A ~| CMOS LSI No. 5055A SAXYO L C 3 8 2 1 6 1 T - 1 7 2 MEG 65536 words x 16 bits x 2 banks Synchronous DRAM Overview Package Dimensions The LC382I61T is a 3.3 V single-voltage power supply unit: mm synchronous D RAM s with a 65536-word x 16-bii x 2-