TELEFUNKEN U 208 B Search Results

Telefunken u 208 b

Abstract: U208B TELEFUNKEN* U 111 B u111b 146 telefunken telefunken 1007 VS U 208 B u208 triac control 8-pin tea1007
Contextual Info: TELEFUNKEN Semiconductors U 208 B / U 208 B–FP Phase Control Circuit – General Triac Control with Retrigger Technology: Bipolar Features D Automatic retriggering D Triggering pulse typ. 125 mA D Voltage and current synchronisation D Internal supply voltage monitoring

telefunken u111B

Abstract: U111B U208B telefunken 1007 Telefunken u 208 b U208
Contextual Info: A 4ME ]> ö^aOCHb QQ1Q473 5 • AL66 , ■ U 208 B •U 208B-FP PHASE CONTROL CIRCUIT Gênerai Triac Control with Retrigger "’p G b> O 0 TELEFUNKEN EL E C T R O N I C Technology: Bipolar Features: • Automatic retriggering • Triggering pulse typ. 125 mA

TRANSISTOR BC 208

Abstract: transistor bc 207 npn transistor bc 209 npn transistor bc 209 b transistor Bu 208 transistor D 2588 transistor BC 209 transistor bc 207 TRANSISTOR BC 208 B 3100U
Contextual Info: i l . •.-.— 17E D TELEFUNKEN ELECTRONIC ■ 0 1 2 0 0 ^ 0001451 1 BU 207 * BU 208 • BU 209 TTf Li(FTOKIM electronic C re itM le c h n o to g w s r - 33-07 Silicon NPN Power Transistors Applications: Horizontal deflection circuits in colour TV-receivers

VQA 23

Abstract: Funkamateur VQA 13 ESBR5501 vqa 33 FUNKAMATEUR - Bauelementeinformation VQA13 esbg5501 CQX51 TLUY5400
Contextual Info: FUNKAMATEUR - Bauelementeinformation Vergleichslisten Optoelektronik Uchtemitterdioden Lichtemitterdioden, Durchmesser 5 mm o Farbe WF rot rot rot grün gelb rot grün gelb orange rot grün VQA VQA VOA VQA VQA VQA VQA VQA VQA VQA VQA 10 13 13-1 23 33 16 26

Contextual Info: C BYV12.BYV16 TELEFUNKEN Semiconductors Fast Silicon Mesa Rectifiers Features • G lass passivated junction • H erm etically sealed package • Soft recovery characteristic • L ow reverse current Applications Fast rectifier and sw itch for exam ple for T V -lin e

Contextual Info: Tem ic BYT86/1300 S e m i c o n d u c t o r s Fast Recovery Silicon Power Rectifier Features • Multiple diffusion • Mesa glass passivated • Low switch on power losses • Good soft recovery behaviour • Fast forward recovery time • Fast reverse recovery time

GAG1

Contextual Info: Tem ic BZT03C S e m i c o n d u c t o r s Silicon Z-Diodes and Transient Voltage Suppressors Features • Glass passivated junction • Hermetically sealed package • Clamping time in picoseconds Applications Medium power voltage regulators and medium power

to-220 weight

Abstract: "high voltage linear regulator" bu508a bu508 BU908 s630t DIN 41872 JEDEC TO-220
Contextual Info: TELEFUNKEN ELECTRONIC_61C D • 6 3 5 0 0 ^ 0005bMM 3 M A L 6 G J - £ 2 - O J Horizontal Deflection Transistors T EL E F U N K E N electronic provides horizontal deflection transistors in both the high voltage T O 3 large eyelet hermetic package and in the high voltage epoxy package. Our basic

Contextual Info: Te m ic BZG04. TELEFUNKEN Semiconductors Silicon Transient Voltage Suppressors Features • G lass passivated junction • High reliability • S ta n d -o ff voltage range 8.2V to 430V • E xcellent clam ping cabability • Fast response tim e typ. S ] ps from 0 to

BAS19-BAS21

Contextual Info: _ BAS19-BAS21 Vishay Telefunken Surface Mount Switching Diode Features • Silicon planar epitaxial high speed diode • For switching and general purpose applications Absolute Maximum Ratings Ti = 25°C Parameter Working peak reverse voltage

transistor BUX 48

Abstract: transistor BU 2727 transistor bc 207 npn bux48 BUx4 BUX 208 bc 206 transistor W301 transistor BUX BUX code marking
Contextual Info: TELEFUNKEN ELECTRONIC ôHEOD'ib 000=1507 4 m k L G G 17E D BUX 48 • BUX 48 A inflLIMMI ! electronic CrMiiv«'fchno>og*» • Silicon NPN Power Transistors T " 3 3 " /S ' Applications: Switching mode power supply, inverters, motor control and relay driver

telefunken ra 100

Abstract: si1375 S208P Telefunken u 208 b
Contextual Info: TELEFUNKEN ELECTRONIC 17E D • ■¡nmüFtMIM electronic Crwtrw TKhoofeg« _. fiRSDD^b 0GDÖS70 S 208 P T ~ * H ~£3 Silicon Photo PIN Diode Applications: High speed photo detector in SMD technique features: • Past response times • Small junction capacitance

configuration of IC 7912

Abstract: 7912 pin configuration ic 7912 7912 ct S191P
Contextual Info: TELEFUNKEN ELECTRONIC •ÜTlUlPtUUKtiK e le c tro n ic CrMtJvtTWwotoc*» 17E D ■ ß^EOD^b DOOÔSSfl 3 ■ A L G G S191P T-*t l"g3 _ Silicon Photo PIN Diode N-Type) Applications Wide band detector for demodulation of fast signals, e.g. of lasers and GaAs-LED's.

Contextual Info: Temic BPV10 S e m i c o n d u c t o r s Silicon PIN Photodiode Description BPV 10 is a very high speed and high sensitive PIN photo­ diode in a standard T - l 3/i plastic package. Due to its w aterclear epoxy the device is sensitive to visible and in­ frared radiation.

Kjh diode

Abstract: JEDEC 1N4148 Ti-150-C
Contextual Info: _ BAV70 Vishay Telefunken Dual Surface Mount Switching Diode Features • Fast switching speed • Electrically identical to standard JEDEC 1N4148 • High conductance • Surface mount package automatic insertion • Common cathode ideally suited for

kje vishay

Abstract: bav99 vishay marking kje
Contextual Info: BAV99_ Vishay Telefunken Dual Surface Mount Switching Diode Features • Fast switching speed • High conductance • Surface mount package automatic insertion • Connected in series ideally suited for Absolute Maximum Ratings Tj = 25°C

transistor BC 575

Abstract: BC 194 TRANSISTORS transistor bf 196 transistor bf 194 b BF 194 transistor transistor bf 195 77 ic marking code BF 194 npn transistor 6520* transistor BFY90
Contextual Info: T E L E F U N K E N E L E C T R O N IC m D fllC fl'îSO Q 'îb 000533 b 3 BFY 90 Ml e l e c t r o n i c Creative Technologies Silicon NPN Epitaxial Planar R F Transistor Applications: General up to GHz range Features: • Power gain 8 dB 800 MHz • Noise figure < 5 dB

Contextual Info: TELEFUNKEN ELECTRONIC 17E D • a'ïSOtnb QQO'Hl? T ■ AL 66 BZT 03/D.« electronic CrMbve Technologies r -u -is - Silicon Z-Diodes Applications: Medium power voltage regulators, and medium power transient suppression circuits Features: • Glass passivated junctipn

U208B

Abstract: phase angle control using IC ic u208b Temic u208b telefunken u208b U208 CIMax telefunken 1007 Open Loop Phase Control circuit Phase Control Circuit
Contextual Info: Tem ic U208B S e m i c o n d u c t o r s Open Loop Phase Control Circuit Description The integrated circuit, U 208B , is designed as a phase control circuit in bipolar technology with internal supply-voltage m onitoring. A s the voltage is built up, uncontrolled output pulses are avoided by internal

Contextual Info: BZG04._ VISHAY ▼ Vishay Telefunken Silicon Transient Voltage Suppressors Features • Glass passivated junction • High reliability • S ta n d -o ff voltage range 8.2V to 220V • Excellent clam ping cabability • Fast response tim e typ. S 1 ps from 0 to VZmin

Contextual Info: BZW03C. VISHAY ▼ Vishay Telefunken Silicon Z-Diodes and Transient Voltage Suppressors Features • Glass passivated junction • Hermetically sealed package • Clamping time in picoseconds Applications Voltage regulators and transient suppression circuits

U4311B-C

Abstract: FM receiver CIRCUIT DIAGRAM without ic
Contextual Info: Tem ic U4M1B-FS S e m i c o n d u c t o r s Low-Current Superhet Remote-Control Receiver Description The U4311B is a monolithic integrated circuit in bipolar technology for low-current UHF remote control super-heterodyne receivers in amplitude- or frequencymodulated mode. Typical applications are keyless car

ti11w

Abstract: max2500 telefunken service telefunken tubes
Contextual Info: Netzröhre fur GW-Heizung indirekt geheizt T E I E E II Serien-oder Parallelspeisung • ■ ■ ■ r U DC-AC-Heating indirectly heated connected in parallel or series II If E AW 59-91 II H IIf c ll Fernseh-Biidröhre ohne lonenfalle TV-picture tube without Ion -Trap

marking 83

Abstract: BFP183T
Contextual Info: Temic BFP183T S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ Applications For low-noise and high-gain broadband amplifiers at collector currents from 2 mA to 30 mA. Features