TEKELEC TE 10 75 Search Results

PF5102

Abstract: KC105 Tekelec TE 10 75 a2cb -20/Tekelec TE 10 75
Contextual Info: Cb ~ 0.10 pF A 22 e 24.5min 4-2±a2 _ 10 1.9*°-2 a0.38*003 Cb ~ 0.10 pF B H 15 0.05/0.10 Cb ~ 0.20 pF B H 28 Cb~ 0,20 pF B H 32 0 3.1 ± 0.1 05.84 102 CNI -H hCO t 04.0 2.04 *0-07 5 ± 0 .1 74 0 4.06 101 C b ~ 0.14 pF C ~ 0.25 pF 0 1 .5710.05 01.8 j- .— w

Contextual Info: TEKELEC COMPONENTS bôE T> WM T Q 0 3 7 Û 7 DDGG141 7TS • DOUBLE BALANCED MIXERS Package Type Model n‘ BMH 158 Relay H eader F 56 677 Frequency ran ge RF LO 1 - 750 MHz IF DC - 750 MHz LO Level 7 dBm Tem perature ran ge - 5 5 / 100‘ C min max units

DH493

Abstract: 40144 DH-493 EH40144 DH40144
Contextual Info: PIN DIODES The ta b le b e lo w presents a single set o f values fro m th e v a rie ty o f c u s to m e r o p tio n s a v a ila b le fo r this series o f pa ssiva te d PIN diodes. TEKELEC MICROWAVE uses its p ro p rie ta ry te c h n o lo g y , w h ic h enab le s

transistor ZA 16

Abstract: PLB16030U SC15
Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Input and output matching cell allows an easier design of circuits • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR

j78 transistor equivalent

Abstract: Transistor Equivalent list j160 capacitor philips transistor BD239 equivalent bd239 equivalent J6 transistor BD239 BY239 LLE16045X SC15
Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor LLE16045X FEATURES QUICK REFERENCE DATA • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR amplifier. • Interdigitated structure provides

Nanotec Electronic GmbH

Contextual Info: REPRESENTATIVES »HYUNDAI CENTRAL REGION CANADA TECH TREK, LTD. 1015 Matheson Blvd. Unit #6 Mississauga, Ontario L4W 3A4 TECH TREK, LTD. 2271 Guenette St. St. Laurent, Quebec H4R 2E9 TECH TREK, LTD. 155 Terence Matthews Cres., Unit 7, Kanata, Ontario K2M 2A8

TEKELEC te 360

Abstract: Naltron Jaco Electronics
Contextual Info: «HYUNDAI UNITED STA TES OF AMERICA Western Region ION Associates 9390 Research Blvd., Bldg. 2 Suite 210, Austin, TX 78759 Te 1:512-794-9006 Electrodyne 2620 S. Parker Road, Suite 395 Aurora, CO 80014 Te 1:303-695-8903 Fax:303-745-8924 ION Associates 221 E. Lamar Blvd., Suite 250

Transistor Equivalent list

Abstract: diode IN4148 Transistor AND DIODE Equivalent list copper permittivity TRIMMER capacitor by239-800 erie feedthrough capacitors BDT85 IN4148 LXE16350X
Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VS W R • Interdigitated structure provides high emitter efficiency

Tekelec airtronic

Abstract: Elcom
Contextual Info: REPRESENTATIVES •HYUNDAI CENTRAL REGION CANADA TECH TREK, LTD. 1015 Matheson Blvd. Unit #6 Mississauga, Ontario L4W 3A4 TECH TREK, LTD. 2271 Guenette St. St. Laurent, Quebec H4R 2E9 TECH TREK, LTD. 155 Terence Matthews Cres., Unit 7, Kanata, Ontario K2M 2A8

elektronik DDR

Abstract: KOMATSU Naltron Jaco Electronics
Contextual Info: > 5 * -:^:iii!-?^-S -fe> ,s i3• *i;i•ì .ì ì if : - •HYUNDAI UNITED STATES OF AMERICA. W estern Region ION Associates 9390 Research Blvd., Bldg. 2 Suite 210, Austin, TX 78759 Tei:512-794-9006 Electrodyne 2620 S. Parker Road, Suite 395 Aurora, CO 80014

Nanotec Electronic GmbH

Abstract: TE 2221
Contextual Info: • H Y U ND AI REPRESENTATIVES CENTRAL REGION CANADA TECH TREK, LTD. 1015 Matheson Blvd. Unit #6 Mississauga, Ontario L4W 3A4 TECH TREK, LTD. 2271 GuenetteSt. St. Laurent, Quebec H4R 2E9 TECH TREK, LTD. 155 Terence Matthews Cres., Unit 7, Kanata, Ontario K2M 2A8

MX0912B350Y

Contextual Info: 7=:3 3 —/s ’ Data sheet status Preliminary specification date of Issue June 1992 MX0912B350Y NPN Silicon planar epitaxial microwave power transistor SbE D PHILIPS INTERNATIONAL • 711DûEb ÜDHb3SM DESCRIPTION APPLICATION FEATURES • Interdigitated structure; high

diode BY239

Abstract: Transistor Equivalent list BY239 Transistor AND DIODE Equivalent list philips ferrite 4b1 erie 1250-003 copper permittivity BDT91 LLE15370X SC15
Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor FEA TU R ES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high V S W R • Interdigitated structure provides high emitter efficiency

diode BY239

Abstract: bd239 equivalent Transistor Equivalent list MLC446 copper permittivity 43081 BD239 BY239 LXE15450X SC15
Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor LXE15450X FEATURES QUICK REFERENCE DATA • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VS W R amplifier. • Interdigitated common-emitter

TEKELEC* te 358

Abstract: TEKELEC te 358 Elcom Nanotec Electronic GmbH
Contextual Info: "HYUNDAI REPRESENTATIVES CENTRAL REGION CANADA TECH TREK, LTD. 1015 Matheson Blvd. Unit #6 Mississauga, Ontario L4W 3A4 TECH TREK, LTD. 2271 Guenette St. St. Laurent, Quebec H4R 2E9 TECH TREK, LTD. 155 Terence Matthews Cres., Unit 7, Kanata, Ontario K2M 2A8

NPN Silicon Epitaxial Planar Transistor

Abstract: IEC134 MZ0912B100Y transistor Common Base amplifier NNN1
Contextual Info: blue binder, tab 12 Data sheet status Preliminary specification dats o f Issus July 1990 MZ0912B100Y NPN silicon planar epitaxial microwave power transistor FEATURES APPLICATION DESCRIPTION • Interdigitated structure; high emitter efficiency. • Diffused emitter ballasting

Contextual Info: * M * DISCRETE SEMICONDUCTORS LLE16350X NPN silicon planar epitaxial microwave power transistor Preliminary specification File under Discrete Semiconductors, SC15 October 1992 Philips Semiconductors PHILIPS bbS3T31 003301b ^ P h ilip s S em iconductors P relim inary sp e cifica tio n

Contextual Info: Philips Semiconductors b b 5 3 ^ 3 1 0 Q2 T 211 7 fl 4 M A P X Product specification B L V 1 0 1 A /B L V 1 0 1 B U H F p o w e r tr a n s is to r s N AUER PHILIPS/DISCRETE FEATURES b'lE D QUICK REFERENCE DATA • High input and output impedances promote easy

c38 transistor

Abstract: PHILIPS 4330 030 36300 transistor tt 2222 c39 transistor L33 TRANSISTOR TT 2222 npn 4330 030 36 ferroxcube FERROXCUBE 4330 b3171 transistor c37
Contextual Info: t m 7110821, D0b31t,4 m BIPHIN Philips Semiconductors_ _ . . bSE T> PHILIPS INTERNATIONAL UHF push-pull power transistor FEATURES • Double input and output matching for easy matching and high gain QUICK REFERENCE DATA RF performance at Th = 25 °C in a common emitter test circuit.

Contextual Info: Philips Components MZ0912B100Y D ISC R ETE SEM ICO N D U CTO R S D a ta s h a e t • t a lu s P re fim in a iy s p e c ific a tio n d a le o f le s u e J u ly 1 9 9 0 NPN silicon planar epitaxial microwave power transistor FEATU RES APPLICATIO N D ESCRIPTIO N

BLV101B

Abstract: mca97 BLV101A Tekelec TE 10 75 TEKELEC te 360 Philips 2222-030 Philips 2222-581 101B L817
Contextual Info: Philips Semiconductors bbSBTBl G G E IS ll 70*4 APX Product specification BLV101A/BLV101B UHF power transistors 'N AI1ER P H I L I P S / D I S C R E T E FEATURES • High input and output impedances promote easy matching • Implanted ballast resistors for

transistor A968

Abstract: a968 BLV101B JBC223 capacitor philips ll BLV101A 2222-581 L1-L10 philips e3 Philips MBB
Contextual Info: Philips Semiconductors M 00 ^ 3 106 PHILIPS INTERNATIONAL bSE D UHF power transistors FE A T U R E S • High input and output im pedances prom ote easy m atching BLV101A/BLV101B Q U IC K R E F E R E N C E DATA R F perform ance at T h = 2 5 °C in a com m on em itter test circuit. M o d e of

tube 5670

Abstract: NISSEI TRANSISTOR c 5578 B a1231 D-82024 ericsson 20147 d 1780 data book electronique HATTELAND MMD Components
Contextual Info: 23-013M Januar 1996 HITACHI EUROPE ELECTRONIC COMPONENTS GROUP European Sales Locations HITACHI EUROPE ELECTRONIC COMPONENTS GROUP PRODUCT RANGE 4-, 8-, 16-Bit Microcomputers Microprocessor - Peripherals 32-Bit Microprocessors Smart Card ICs Display Controller/Driver

Hyde Park Electronics

Abstract: 4001 PA PIONEER
Contextual Info: /AN Ü ^ Sales Offices, Distributors & Representatives September 1991 Altera U.S. Sales Offices N O R TH ER N C A LIFORNIA C O R PO R A TE H EAD Q U A R TER S Altera Corporation 2610 Orchard Parkway San Jose, C A 95134-2020 TEL: (408) 984-2800 FAX: (408) 248-7097