TEKELEC TE 10 75 Search Results

PF5102

Abstract: KC105 Tekelec TE 10 75 a2cb -20/Tekelec TE 10 75
Contextual Info: Cb ~ 0.10 pF A 22 e 24.5min 4-2±a2 _ 10 1.9*°-2 a0.38*003 Cb ~ 0.10 pF B H 15 0.05/0.10 Cb ~ 0.20 pF B H 28 Cb~ 0,20 pF B H 32 0 3.1 ± 0.1 05.84 102 CNI -H hCO t 04.0 2.04 *0-07 5 ± 0 .1 74 0 4.06 101 C b ~ 0.14 pF C ~ 0.25 pF 0 1 .5710.05 01.8 j- .— w

Contextual Info: TEKELEC COMPONENTS bôE T> WM T Q 0 3 7 Û 7 DDGG141 7TS • DOUBLE BALANCED MIXERS Package Type Model n‘ BMH 158 Relay H eader F 56 677 Frequency ran ge RF LO 1 - 750 MHz IF DC - 750 MHz LO Level 7 dBm Tem perature ran ge - 5 5 / 100‘ C min max units

DH493

Abstract: 40144 DH-493 EH40144 DH40144
Contextual Info: PIN DIODES The ta b le b e lo w presents a single set o f values fro m th e v a rie ty o f c u s to m e r o p tio n s a v a ila b le fo r this series o f pa ssiva te d PIN diodes. TEKELEC MICROWAVE uses its p ro p rie ta ry te c h n o lo g y , w h ic h enab le s

274 transistor

Abstract: transistor c 5855
Contextual Info: Philips Semiconductors Preliminary specification Microwave power transistor FEATURES • Very high power gain • Diffused emitter ballasting resistors improve ruggedness • Interdigitated emitter-base structure • Gold metallization with barrier layer to prevent electromigration and

LM 886 IC chip

Abstract: TEKELEC te 358
Contextual Info: DISCRETE SEMICONDUCTORS BLV2045N UHF power transistor P relim inary specification Philips Sem iconductors 1998 O ct 01 PHILIPS Philips Semiconductors Preliminary specification UHF power transistor BLV2045N FEATURES PINNING - SOT39QA • Em itter ballasting resistors fo r optim um te m perature

transistor ZA 16

Abstract: PLB16030U SC15
Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Input and output matching cell allows an easier design of circuits • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR

m 32 ab transistor

Abstract: mlc444 bd239 equivalent
Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated common-emitter structure provides high emitter

j78 transistor equivalent

Abstract: Transistor Equivalent list j160 capacitor philips transistor BD239 equivalent bd239 equivalent J6 transistor BD239 BY239 LLE16045X SC15
Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor LLE16045X FEATURES QUICK REFERENCE DATA • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR amplifier. • Interdigitated structure provides

Contextual Info: DISCRETE SEMICONDUCTORS RX1214B170W Microwave power transistor Product specification Supersedes data of December 1994 File under Discrete Semiconductors, SC15 Philips Sem iconductors 1997 Feb 18 PHILIPS Philips Semiconductors Product specification Microwave power transistor

Nanotec Electronic GmbH

Contextual Info: REPRESENTATIVES »HYUNDAI CENTRAL REGION CANADA TECH TREK, LTD. 1015 Matheson Blvd. Unit #6 Mississauga, Ontario L4W 3A4 TECH TREK, LTD. 2271 Guenette St. St. Laurent, Quebec H4R 2E9 TECH TREK, LTD. 155 Terence Matthews Cres., Unit 7, Kanata, Ontario K2M 2A8

TEKELEC te 360

Abstract: Naltron Jaco Electronics
Contextual Info: «HYUNDAI UNITED STA TES OF AMERICA Western Region ION Associates 9390 Research Blvd., Bldg. 2 Suite 210, Austin, TX 78759 Te 1:512-794-9006 Electrodyne 2620 S. Parker Road, Suite 395 Aurora, CO 80014 Te 1:303-695-8903 Fax:303-745-8924 ION Associates 221 E. Lamar Blvd., Suite 250

NFM61 SP

Abstract: tekelec TA 355 TEKELEC te 358
Contextual Info: DISCRETE SEMICONDUCTORS S^EET BLV2045N UHF power transistor P relim inary specification Philips Semiconductors 1998 Nov 19 PHILIPS Philips Semiconductors Preliminary specification UHF power transistor BLV2045N FEATURES PINNING - SOT39QA • Em itter ballasting resistors fo r optim um tem perature

Transistor Equivalent list

Abstract: diode IN4148 Transistor AND DIODE Equivalent list copper permittivity TRIMMER capacitor by239-800 erie feedthrough capacitors BDT85 IN4148 LXE16350X
Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VS W R • Interdigitated structure provides high emitter efficiency

Tekelec airtronic

Abstract: Elcom
Contextual Info: REPRESENTATIVES •HYUNDAI CENTRAL REGION CANADA TECH TREK, LTD. 1015 Matheson Blvd. Unit #6 Mississauga, Ontario L4W 3A4 TECH TREK, LTD. 2271 Guenette St. St. Laurent, Quebec H4R 2E9 TECH TREK, LTD. 155 Terence Matthews Cres., Unit 7, Kanata, Ontario K2M 2A8

Nanotec Electronic GmbH

Abstract: TE 2221
Contextual Info: • H Y U ND AI REPRESENTATIVES CENTRAL REGION CANADA TECH TREK, LTD. 1015 Matheson Blvd. Unit #6 Mississauga, Ontario L4W 3A4 TECH TREK, LTD. 2271 GuenetteSt. St. Laurent, Quebec H4R 2E9 TECH TREK, LTD. 155 Terence Matthews Cres., Unit 7, Kanata, Ontario K2M 2A8

MX0912B350Y

Contextual Info: 7=:3 3 —/s ’ Data sheet status Preliminary specification date of Issue June 1992 MX0912B350Y NPN Silicon planar epitaxial microwave power transistor SbE D PHILIPS INTERNATIONAL • 711DûEb ÜDHb3SM DESCRIPTION APPLICATION FEATURES • Interdigitated structure; high

L4W 87

Abstract: L4W 75 305621 Naltron Nanotec Electronic GmbH
Contextual Info: REPRESENTATIVES “H Y U N D A I CENTRAL REGION CANADA TECH TREK, LTD. 1015 Matheson Blvd. Unit #6 Mississauga, Ontario L4W 3A4 TECH TREK, LTD. 2271 Guenette St. St. Laurent, Quebec H4R 2E9 TECH TREK, LTD. 155 Terence Matthews Cres., Unit 7, Kanata, Ontario K2M 2A8

diode BY239

Abstract: Transistor Equivalent list BY239 Transistor AND DIODE Equivalent list philips ferrite 4b1 erie 1250-003 copper permittivity BDT91 LLE15370X SC15
Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor FEA TU R ES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high V S W R • Interdigitated structure provides high emitter efficiency

diode BY239

Abstract: bd239 equivalent Transistor Equivalent list MLC446 copper permittivity 43081 BD239 BY239 LXE15450X SC15
Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor LXE15450X FEATURES QUICK REFERENCE DATA • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VS W R amplifier. • Interdigitated common-emitter

741 LEM

Abstract: AM/amplifier LEM 741
Contextual Info: DISCRETE SEMICONDUCTORS S^EET BLV2045N UHF power transistor P relim inary specification Philips Semiconductors 1999 A p r 23 PHILIPS Philips Semiconductors Preliminary specification UHF power transistor BLV2045N FEATURES PINNING - SOT39QA • Em itter ballasting resistors fo r optim um tem perature

equivalent of SL 100 NPN Transistor

Abstract: MX0912B250Y
Contextual Info: Data sha e t status Preliminary specification data o f Issue July 1990 MX0912B250Y NPN silicon planar epitaxial microwave power transistor APPLICATION DESCRIPTION • Interdigitated structure; high Intended for use in co m m on base em itter efficiency. • Diffused em itter ballasting

12NC philips diode 93

Abstract: transistor j7 Transistor Equivalent list 12NC philips chip resistor BDT91 BY239 LLE15180X SC15 POTENTIOMETER AB 10 K
Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor FEA TU R ES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high V S W R • Interdigitated structure provides high emitter efficiency

TEKELEC* te 358

Abstract: TEKELEC te 358 Elcom Nanotec Electronic GmbH
Contextual Info: "HYUNDAI REPRESENTATIVES CENTRAL REGION CANADA TECH TREK, LTD. 1015 Matheson Blvd. Unit #6 Mississauga, Ontario L4W 3A4 TECH TREK, LTD. 2271 Guenette St. St. Laurent, Quebec H4R 2E9 TECH TREK, LTD. 155 Terence Matthews Cres., Unit 7, Kanata, Ontario K2M 2A8

NPN Silicon Epitaxial Planar Transistor

Abstract: IEC134 MZ0912B100Y transistor Common Base amplifier NNN1
Contextual Info: blue binder, tab 12 Data sheet status Preliminary specification dats o f Issus July 1990 MZ0912B100Y NPN silicon planar epitaxial microwave power transistor FEATURES APPLICATION DESCRIPTION • Interdigitated structure; high emitter efficiency. • Diffused emitter ballasting