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    TEFPS Search Results

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    TEFPS Price and Stock

    KEMET Corporation

    KEMET Corporation TEFPSA31A336MHF8R

    33.0UF 10.0V
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    DigiKey TEFPSA31A336MHF8R Tape & Reel 3,000
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    KEMET Corporation TEFPSA081C226MTHF8R

    22.0UF 16.0V
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    DigiKey TEFPSA081C226MTHF8R Tape & Reel 3,000
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    KEMET Corporation TEFPSA081C226MQHF8R

    22.0UF 16.0V
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    DigiKey TEFPSA081C226MQHF8R Tape & Reel 3,000
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    KEMET Corporation TEFPSA30J107M55PHF8R

    100.UF 6.0V
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    DigiKey TEFPSA30J107M55PHF8R Tape & Reel 3,000
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    KEMET Corporation TEFPSB101D156M150QHF8R

    15.0UF 20.0V
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    DigiKey TEFPSB101D156M150QHF8R Tape & Reel 3,000
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    TEFPS Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    29070* intel

    Abstract: transistor w18 57 small
    Contextual Info: 1.8 Volt Intel Wireless Flash Memory W18 28F320W18, 28F640W18, 28F128W18 Preliminary Datasheet Product Features High Performance — 70 ns Initial Access Speed — 14 ns Clock to Data Output Zero Wait-State Synchronous Burst Mode — 20 ns Page Mode Read Speed


    Original     		28F320W18, 28F640W18, 28F128W18 56-Ball 32-Mbit) 64-Mbit) 128-Mbit) 29070* intel transistor w18 57 small PDF

    vf bga

    Abstract: 29070* intel 28F3208W30
    Contextual Info: Intel 1.8 Volt Wireless Flash Memory with 3 Volt I/O and SRAM W30 28F6408W30, 28F3208W30, 28F3204W30, 28F320W30 Preliminary Datasheet Product Features • ■ ■ ■ Flash Performance — 70 ns Initial Access Speed — 25 ns Page-Mode Read Speed — 20 ns Burst-Mode Read Speed


    Original     		28F6408W30, 28F3208W30, 28F3204W30, 28F320W30 Compa01 0100h 0000h vf bga 29070* intel 28F3208W30 PDF

    TEESVA1A106M8R

    Abstract: TEESVA1C106M8R TEPSLC TEESVJ0J106M8R TEESVA0J476M8R TEESVB TEESVA1A TEESVA1A475M8R TEPSLB21A476M8R TEPSLC1A107M12R
    Contextual Info: Product Information Lead-free tantalum chip capacitors Conductive polymer tantalum chip capacitors Ultra-low ESR/RoHS compliant conductive polymer tantalum chip capacitors PS/L series Featuring new 12 mΩ Ω ultra-low ESR model highly effective for decoupling


    Original     		ESVJ1A155M ESVD0J477M 100kHz TEFSVA30E227M8R TEESVJ1A155M8R TEESVD0J477M12R TEPSA31A336M8R TEFSVJ0G336M8R TEFSVP20G686M8R TEESVA1A106M8R TEESVA1C106M8R TEPSLC TEESVJ0J106M8R TEESVA0J476M8R TEESVB TEESVA1A TEESVA1A475M8R TEPSLB21A476M8R TEPSLC1A107M12R PDF

    740-0007

    Abstract: 29070* intel
    Contextual Info: 1.8 Volt Intel Wireless Flash Memory W18 28F320W18, 28F640W18, 28F128W18 Preliminary Datasheet Product Features High Performance — 70 ns Initial Access Speed — 14 ns Clock to Data Output Zero Wait-State Synchronous Burst Mode — 20 ns Page Mode Read Speed


    Original     		28F320W18, 28F640W18, 28F128W18 56-Ball 32-Mbit) 64-Mbit) 128-Mbit) 740-0007 29070* intel PDF

    46-17000

    Abstract: A0-A21 Q0-Q15
    Contextual Info: ADVANCED INFORMATION MX28F640W30T/B 64M-BIT [4M x16] CMOS SINGLE VOLTAGE 1.8V ONLY FLASH MEMORY FEATURES • Architecture - Bit Organization: 4,194,304 x 16 - Multiple 4Mb partitions - RWW Read While Write or RWE (Read While Erase) - Sector Erase (Sector structure : 4Kword x 8 (parameter sectors), 32Kword x 127 (main sectors)


    Original     		MX28F640W30T/B 64M-BIT 32Kword 128-bit 64-bit PM0963 46-17000 A0-A21 Q0-Q15 PDF

    8857H

    Abstract: transistor r10 P2F 28F3204W30 28F320W30 28F6408W30 28F640W30 intel DOC bba 1st transistor code p2f A14RM1
    Contextual Info: 1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM W30 28F6408W30, 28F3204W30, 28F320W30, 28F640W30 Preliminary Datasheet Product Features Flash Performance — 70 ns Initial Access Speed — 25 ns Page-Mode Read Speed — 20 ns Burst-Mode Read Speed


    Original     		28F6408W30, 28F3204W30, 28F320W30, 28F640W30 Compat-02 0100h 0000h 8857H transistor r10 P2F 28F3204W30 28F320W30 28F6408W30 28F640W30 intel DOC bba 1st transistor code p2f A14RM1 PDF

    A0-A21

    Abstract: Q0-Q15
    Contextual Info: ADVANCED INFORMATION MX28F640W18T/B 64M-BIT [4M x16] CMOS SINGLE VOLTAGE 1.8V ONLY FLASH MEMORY FEATURES • Architecture - Bit Organization: 4,194,304 x 16 - Multiple 4Mb partitions - RWW Read While Write or RWE (Read While Erase) - Sector Erase (Sector structure : 4Kword x 8 (parameter sectors), 32Kword x 127 (main sectors)


    Original     		MX28F640W18T/B 64M-BIT 32Kword 128-bit 64-bit APR/17/2002 OCT/17/2002 NOV/07/2002 PM0883 A0-A21 Q0-Q15 PDF