TECHNO Search Results

74ALS05

Abstract: diode sy 106 diode sy 180 10
Contextual Info: TOSHIBA TENTATIVE TC74VHC05F/FN/FT TO SH IBA C M O S DIGITAL INTEGRATED CIRCUIT SILICON M O N O LITH IC TC74VHC05F, TC74VHC05FN, TC74VHC05FT HEX INVERTER OPEN DRAIN _ The TC74VHC05 is an advanced high speed CMOS INVERTER fabricated with silicon gate C2MOS technology.

FN521

Abstract: FN 521 UFN522 UFN523 UFN520
Contextual Info: POWER MOSFET TRANSISTORS UFN520 100 Volt, 0.3 Ohm N-Channel UFN522 UFN523 DESCRIPTION The U nitrode power M O SFET desig n u tilizes the m ost a dvan ced technology available. This efficient design a ch ieves a very low Rosiom an d a high tran scon d u ctan ce.

Contextual Info: TC55417P/J —15H. TC55417P/J-20H TC55417P/J—25H. TC55417P/J-35H • * 16,384 W O R D x 4 BIT CMOS STATIC RAM DESCRIPTION The TC55417P/J—H is a 65,536 bit high speed static random access memory organized as 16,384 words by 4 bits using CMOS technology, and operated from a single 5 - volt supply.

A9RV

Abstract: 5s a315 A327
Contextual Info: TOSHIBA TC514900AJLL-70/80 524,288 WORD X 9 BIT DYNAMIC RAM DESCRIPTION The TC514900AJLL is the new generation dynamic RAM organized 524,288 word by 9 bit. The TC514900AJLL utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit

UFNF430

Abstract: diode ed 2437 UFNF432
Contextual Info: POWER MOSFET TRANSISTORS U F N F 4 3 0 U F N F 4 3 1 500 Volt, 1.5 Ohm N-Channel U F N F 4 3 2 U F N F 4 3 3 DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Rostom and a high transconductance.

74LS27 truth table

Contextual Info: TOSHIBA TC74HC27AP/AF/AFN TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74HC27AP, TC74HC27AF, TC74HC27AFN Note The JEDEC SOP (FN) is not available in Japan. TRIPLE 3 -IN P U T NOR GATE The TC74HC27A is a high speed CMOS 3-INPUT NOR GATE fabricated with silicon gate C2MOS technology.

TC74HC113

Contextual Info: TC74HC113P/F TC74HC113 P /F DUAL J - K F L IP FLOP WITH CLEAR The TC74HC113 is a high speed CMOS DUAL J—K FLIP FLOP fabricated with silicon gate C 2MOS technology. It achieves the high speed operation similar to equivalent LSTTL while maintain­ ing the CMOS low power dissipation.

TC74HC4022

Abstract: TC74HC4022P
Contextual Info: TC74HC4022P/F TC74HC4022P/F OCTAL COUNTER/DIVIDER The TC74HC4022 is a high speed CMOS OCTAL COUNTER/DIVIDER fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power dissipation.

Contextual Info: TOSHIBA TC74HC4514AP TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74HC4514AP 4 -TO - 16 LINE DECODER/LATCH The TC74HC4514A are high speed CMOS 4 - LINE TO 16 LINE DECODER WITH LATCHED INPUTs fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent

Contextual Info: TC74HC77AP/AF 4 -B IT D TYPE LATCH The TC74HC77A is a high speed CMOS 4-B IT D -T Y P E LATCH fabricated with silicon gate C2MOS technology. It achieves the high speed operation sim ilar to equivalent LSTTL while m aintaining the CMOS low power dissiparion.

260-pin

Contextual Info: TOSHIBA TC55V1864J/FT-10/12/15 PRELIMINARY SILICON GATE CMOS 65,536 WORD x 18 BIT CMOS STATIC RAM Description TheTC55V1864J/FT is a 1,179,648 bit high speed CMOS static random access memory organized as 65,536 words by 18 bits and operated from a single 3.3V : upply. Toshiba’s advanced CMOS technology and circuit design enable high speed operation.

4A04I

Abstract: tc514100a
Contextual Info: TC51441OAP/AJ/ASJ/AZ—70, TC51441OAP/AJ/ASJ/AZ-80 TC51441OAP/AJ/ASJ/AZ-10 PRELIMINARY 1,048,576 W ORD x 4 BIT DYNAMIC RAM DESCRIPTION The TC51441 OAP/AJ/ASJ/AZ is the new generation dynamic RAM organized 1,048,576 words by 4 bits. The TC514410AP/AJ/ASJ/AZ utilizes TOSHIBA’S CMOS Silicon gate process technology as well as

Contextual Info: TC74LVQ573F/FW/FS OCTAL D-TYPE LATCH WITH 3-STATE OUTPUT The TC74LVQ573 is a high speed CMOS OCTAL LATCH w ith 3-STATE OUTPUT fabricated w ith silicon gate and double-layer metal w iring C2MOS technology. Designed fo r use in 3.3 Volt systems, it achieves high

TC74HC30A

Contextual Info: TC74HC30AP/AF/AFN 8 - I N P U T NAND GATE The TC74HC30A is a high speed CMOS 8-IN P U T NAND GATE fabricated with silicon gate C 2 MOS technology. It achieves the high speed operation sim ilar to equivalent L ST T L while maintaining the CMOS low power dissipation.

Contextual Info: TOSHIBA TC74LVX4245FS Dual Supply Octal B u s Transceiver The TC74LVX4245 is a dual supply, advanced high speed C M O S O CTAL B U S T R A N SC E IV E R fabricated with silicon gate C M O S technology. Designed for use as an interface between a 5V bus and a

Contextual Info: TOSHIBA TC7WH74FU TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC7WH74FU D-TYPE FLIP FLOP WITH PRESET AND CLEAR The TC7WH74FU is an advanced high speed CMOS D-FLIP FLOP fabricated with silicon gate CMOS technology. It achieves the high speed operation similar to equivalent

BE423

Contextual Info: TOSHIBA TC5118325BJ/BFT-70 PRELIMINARY 524,288 WORD X 32 BIT EDO DYNAMIC RAM Description The TC5118325BJ/BFT is the Hyper Page Mode (EDO) dynamic RAM organized 524,288 words by 32 bits. The TC5118325BJ/BFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to pro­

TC514170BJ-80

Abstract: tc514170 TC514170BJ80
Contextual Info: TOSHIBA TC514170BJ-70/80 262,144 WORD X 16 BIT DYNAMIC RAM DESCRIPTION The TC514170BJ is the new generation dynam ic RAM organized 262,144 word by 16 bit. The TC514170BJ utilizes T oshiba’s CM OS silicon gate process technology as well as advanced circuit techniques

Contextual Info: TOSHIBA TC 74HC 133AP/AF TO SHIBA CM OS D IG ITAL INTEGRATED CIRCUIT SILICON M ONOLITHIC TC74HC133AP, TC74HC133AF 1 3 -IN P U T NAND GATE The TC74HC133A is a high speed CMOS 13-INPUT NAND GATE fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent

ufn440

Abstract: UFN441
Contextual Info: POWER MOSFET TRANSISTORS UFN440 UFN441 UFN442 UFN443 500 Volt, 0.85 Ohm N-Channel FEA TU RES D ESCRIPTIO N • • • • • The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low R dscow and a high transconductance.

TC5117800bnt-60

Abstract: TC5117800B
Contextual Info: TOSHIBA TC5117800BNJ/BNT-60/70 PRELIMINARY 2,097,152 WORD X 8 BIT FAST PAGE DYNAMIC RAM Description The TC5117800BNT is the fast page dynamic RAM organized 2,097,152 words by 8 bits. The TC5117800BNT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins,

UFN432

Abstract: mosfet UFN432 UFN 432 UFN431 UFN433
Contextual Info: POWER MOSFET TRANSISTORS 500 Volt, 1.5 Ohm N-Channel UFN430 UFN431 UFN432 UFN433 FEATURES DESCRIPTION • • • • • The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Rosiom and a high transconductance.

IC 4511B pin

Abstract: 7 SEGMENT LETTER DISPLAY COMMON CATHODE tlr332 TLR-332 TC74HC4511P
Contextual Info: TC74HC4511P/F TC74HC4511P/F BCD-TO-7 SEGMENT LATCH/DECODER/DRIVER The TC74HC4511 is a high speed CMOS BCD-TO-7 SEGMENT LATCH/DECODER/DRIVER fablicated with silicon gate C2MOS technology. It enables high speed latch and decode operation with identical pin connection and function to standard CMOS 4511B.

Contextual Info: TC74HC4072AP/AF D U A L 4 - I N P U T OR G A TE The TC74HC4072A is a high speed CMOS 4-IN P U T OR GATE fabricated with silicon gate C2MOS technology. It achieves the high speed operation sim ilar to equivalent LSTTL while m aintaining the CMOS low power dissipation.