TDC 124 Search Results

TDC106*035NSF-F

Abstract: Barium titanate material TDC226K035WSG-F afk-kit2 CK05BX223K CK06BX104K ck06bx334k
Contextual Info: 1786-2012.qxp:QuarkCatalogTempNew 9/17/12 6:16 PM Page 1786 Tantalum, Ceramic Capacitors and Design Kits TDC — Epoxy Dipped Solid Tantalum CK — Multilayer Ceramic D Type Type TDC capacitors offer the long life electrical stability characteristics of solid tantalum at low cost. The tough epoxy coating provides uniform lead

CY7C09569V

Contextual Info: CY7C09569V CY7C09579V CY7C09289V CY7C09369V CY7C09379V CY7C09389V3.3V 16K/32K x 36 FLEx36 Synchronous Dual-Port Static RAM 1CY7C025/0251 CY7C09569V CY7C09579V 3.3V 16K/32K x 36 FLEx36™ Synchronous Dual-Port Static RAM Features • True dual-ported memory cells which allow simultaneous access of the same memory location

transistor A144

Abstract: a144* transistor CY7C09569V CY7C09579V-83AXI A144 transistor data sheet CY7C09289V CY7C09369V CY7C09379V CY7C09579V
Contextual Info: CY7C09569V CY7C09579V CY7C09289V CY7C09369V CY7C09379V CY7C09389V3.3V 16K/32K x 36 FLEx36 Synchronous Dual-Port Static RAM CY7C09569V CY7C09579V 3.3V 16K/32K x 36 FLEx36™ Synchronous Dual-Port Static RAM Features • 3.3V Low operating power • True dual-ported memory cells which allow simultaneous access of the same memory location

transistor A144

Abstract: A144 transistor data sheet CY7C09569V CY7C09579V
Contextual Info: 25/0251 CY7C09569V CY7C09579V 3.3V 16K/32K x 36 FLEx36 Synchronous Dual-Port Static RAM Features • True dual-ported memory cells which allow simultaneous access of the same memory location • Two Flow-Through/Pipelined devices — 16K x 36 organization CY7C09569V

CY7C09569V

Abstract: 4an4 CY7C09579V CY7C09579V-67AC
Contextual Info: 25/0251 CY7C09569V CY7C09579V 3.3V 16K/32K x 36 FLEx36 Synchronous Dual-Port Static RAM Features • True dual-ported memory cells which allow simultaneous access of the same memory location • Two Flow-Through/Pipelined devices — 16K x 36 organization CY7C09569V

CY7C09569V

Abstract: CY7C09579V
Contextual Info: 51 PRELIMINARY CY7C09569V CY7C09579V Back 3.3V 16K/32K x 36 FLEx36 Synchronous Dual-Port Static RAM Features • True Dual-Ported memory cells which allow simultaneous access of the same memory location • 2 Flow-Through/Pipelined devices — 16K x 36 organization CY7C09569V

transistor A144

Abstract: CY7C09569V CY7C09289V CY7C09369V CY7C09379V CY7C09579V
Contextual Info: CY7C09569V CY7C09579V CY7C09289V CY7C09369V CY7C09379V CY7C09389V3.3V 16K/32K x 36 FLEx36 Synchronous Dual-Port Static RAM CY7C09569V CY7C09579V 3.3V 16K/32K x 36 FLEx36™ Synchronous Dual-Port Static RAM Features • 3.3V Low operating power • True dual-ported memory cells which allow simultaneous access of the same memory location

transistor A144

Abstract: CY7C09569V CY7C09289V CY7C09369V CY7C09379V CY7C09579V
Contextual Info: CY7C09569V CY7C09579V CY7C09289V CY7C09369V CY7C09379V CY7C09389V3.3V 16K/32K x 36 FLEx36 Synchronous Dual-Port Static RAM CY7C09569V CY7C09579V 3.3V 16K/32K x 36 FLEx36™ Synchronous Dual-Port Static RAM Features • 3.3V Low operating power • True dual-ported memory cells which allow simultaneous access of the same memory location

CY7C09569V

Contextual Info: 1 7C09579V: 10/97 Revision: May 1, 2000 CY7C09569V CY7C09579V PRELIMINARY 3.3V 16K/32K x 36 FLEx36 Synchronous Dual-Port Static RAM Features • True dual-ported memory cells which allow simultaneous access of the same memory location • Two Flow-Through/Pipelined devices

CY7C09569V

Abstract: ba172 CY7C09579V
Contextual Info: 1 CY7C09569V CY7C09579V PRELIMINARY 3.3V 16K/32K x 36 FLEx36 Synchronous Dual-Port Static RAM Features • True dual-ported memory cells which allow simultaneous access of the same memory location • Two Flow-Through/Pipelined devices — 16K x 36 organization CY7C09569V

CY7C09569V

Abstract: CY7C09579V
Contextual Info: CY7C09569V CY7C09579V CY7C09289V CY7C09369V CY7C09379V CY7C09389V3.3V 16K/32K x 36 FLEx36 Synchronous Dual-Port Static RAM 1CY7C025/0251 CY7C09569V CY7C09579V PRELIMINARY 3.3V 16K/32K x 36 FLEx36™ Synchronous Dual-Port Static RAM Features • True dual-ported memory cells which allow simultaneous access of the same memory location

CY7C09569V

Contextual Info: CY7C09569V CY7C09579V CY7C09289V CY7C09369V CY7C09379V CY7C09389V3.3 V 16 K / 32 K x 36 FLEx36 Synchronous Dual-Port Static RAM CY7C09569V CY7C09579V ® 3.3 V 16 K / 32 K × 36 FLEx36 Synchronous Dual-Port Static RAM 3.3 V 16 K / 32 K × 36 FLEx36® Synchronous Dual-Port Static RAM

CY7C09569V

Abstract: CY7C09289V CY7C09369V CY7C09379V CY7C09579V
Contextual Info: CY7C09569V CY7C09579V CY7C09289V CY7C09369V CY7C09379V CY7C09389V3.3 V 16 K / 32 K x 36 FLEx36 Synchronous Dual-Port Static RAM CY7C09569V CY7C09579V ® 3.3 V 16 K / 32 K × 36 FLEx36 Synchronous Dual-Port Static RAM Features Functional Description •

CY7C09569V

Contextual Info: 25/0251 CY7C09569V CY7C09579V PRELIMINARY 3.3V 16K/32K x 36 FLEx36 Synchronous Dual-Port Static RAM Features • True dual-ported memory cells which allow simultaneous access of the same memory location • Two Flow-Through/Pipelined devices — 16K x 36 organization CY7C09569V

CY7C09569V

Contextual Info: CY7C09569V CY7C09579V CY7C09289V CY7C09369V CY7C09379V CY7C09389V3.3 V 16 K / 32 K x 36 FLEx36 Synchronous Dual-Port Static RAM CY7C09569V CY7C09579V ® 3.3 V 16 K / 32 K × 36 FLEx36 Synchronous Dual-Port Static RAM 3.3 V 16 K / 32 K × 36 FLEx36® Synchronous Dual-Port Static RAM

A14L

Abstract: IDT70V9279 IDT70V9279L IDT70V9279S
Contextual Info: HIGH-SPEED 3.3V 32K x 16 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM PRELIMINARY IDT70V9279S/L Integrated Device Technology, Inc. FEATURES: • Full synchronous operation on both ports - 4ns setup to clock and 1ns hold on all control, data, and address inputs

A13L

Abstract: IDT70V9269 IDT70V9269L IDT70V9269S
Contextual Info: HIGH-SPEED 3.3V 16K x 16 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM PRELIMINARY IDT70V9269S/L Integrated Device Technology, Inc. FEATURES: • Full synchronous operation on both ports - 4ns setup to clock and 1ns hold on all Control, data, and address inputs

A14L

Abstract: IDT70V9279 IDT70V9279L IDT70V9279S
Contextual Info: PRELIMINARY IDT70V9279S/L HIGH-SPEED 3.3V 32K x 16 SYNCHRONOUS DUAL-PORT STATIC RAM Features: ◆ ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous access of the same memory location High-speed clock to data access – Commercial: 9/12/15ns max.

A13L

Abstract: IDT70V9269 IDT70V9269L IDT70V9269S
Contextual Info: HIGH-SPEED 3.3V 16K x 16 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM PRELIMINARY IDT70V9269S/L Integrated Device Technology, Inc. FEATURES: • Full synchronous operation on both ports - 4ns setup to clock and 1ns hold on all Control, data, and address inputs

CY7C09569V

Abstract: CY7C09289V CY7C09369V CY7C09379V CY7C09579V
Contextual Info: CY7C09569V CY7C09579V CY7C09289V CY7C09369V CY7C09379V CY7C09389V3.3 V 16 K / 32 K x 36 FLEx36 Synchronous Dual-Port Static RAM CY7C09569V CY7C09579V ® 3.3 V 16 K / 32 K × 36 FLEx36 Synchronous Dual-Port Static RAM Features Functional Description •

CY7C09569V

Contextual Info: CY7C09569V CY7C09579V CY7C09289V CY7C09369V CY7C09379V CY7C09389V3.3 V 16 K / 32 K x 36 FLEx36 Synchronous Dual-Port Static RAM CY7C09569V CY7C09579V ® 3.3 V 16 K / 32 K × 36 FLEx36 Synchronous Dual-Port Static RAM 3.3 V 16 K / 32 K × 36 FLEx36® Synchronous Dual-Port Static RAM

A14L

Abstract: IDT70V9279 IDT70V9279L IDT70V9279S
Contextual Info: HIGH-SPEED 3.3V 32K x 16 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM PRELIMINARY IDT70V9279S/L Integrated Device Technology, Inc. FEATURES: • Full synchronous operation on both ports - 4ns setup to clock and 1ns hold on all control, data, and address inputs

Contextual Info: IDT70V9279S/L HIGH-SPEED 3.3V 32K x 16 SYNCHRONOUS DUAL-PORT STATIC RAM Features: ◆ ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous access of the same memory location High-speed clock to data access – Commercial: 9/12/15ns max.

A13L

Abstract: IDT70V9269 IDT70V9269L IDT70V9269S
Contextual Info: HIGH-SPEED 3.3V 16K x 16 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM Features: ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous access of the same memory location High-speed clock to data access – Commercial: 9/12/15ns max.