TD31 Search Results

4650N

Abstract: DT310N KM17 TD310N TT310N
Contextual Info: N Datenblatt / Data sheet Netz-Thyristor-Modul Phase Control Thyristor Module TT310N TT310N Kenndaten TD310N DT310N TT310N.-A Elektrische Eigenschaften Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Vorwärts- und Rückwärts-Spitzensperrspannung Tvj = -40°C. Tvj max

Contextual Info: /T T SGS-THOMSON *7M, HD ifUIOTMOlg® TD310 TRIPLE IGBT/MOS DRIVER • THREE POWER IGBT/MOS AND PULSE TRANSFORMER DRIVERS ■ CURRENT SENSE COMPARATOR WITH 1ms INHIBITION TIME FUNCTION ■ INSTANTANEOUS SIGNAL TRANSMISSION ■ 0.6 Amp PER CHANNEL PEAK OUTPUT

Contextual Info: TD3172 Diodes General-Purpose Reference/Regulator Diode Military/High-RelN V Z Nom.(V) Reference Voltage68 @I(Z) (A) (Test Condition)2.0m Tolerance (%)5 P(D) Max. (W)400m Z(z) Max. (ê) Dyn. Imped.280 Temp Coef pp/10k10 Maximum Operating Temp (øC)175’

led solar

Abstract: testing diode TD3169
Contextual Info: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714.979.8220 FAX: 714.557.5989 Capabilities Data Sheet Solar Array Bypass Diode TD3169 Features • • • • • • Very Thin Construction Low leakage reverse current Low forward voltage drop Flexible leads for surface mount soldering or welding

TVR diode

Abstract: solar cell MSC1051 TD3168
Contextual Info: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714.979.8220 FAX: 714.557.5989 Capabilities Data Sheet Solar Array Bypass Diode TD3168 Features • • • • • • 70 Volts 1.0 Amp Very Thin Construction Low leakage reverse current Low forward voltage drop

Contextual Info: TD310 TRIPLE IGBT/MOS DRIVER WITH CURRENT SENSE • THREE POWER IGBT/MOS AND PULSE TRANSFORMER DRIVERS ■ CURRENT SENSE COMPARATOR ■ UNCOMMITTED OP-AMP ■ 0.6 A PER CHANNEL PEAK OUTPUT CURRENT CAPABILITY ■ LOW OUTPUT IMPEDANCE TYP: 7Ω AT N DIP-16 Plastic Package

TD3163

Abstract: MSC1047
Contextual Info: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714.979.8220 FAX: 714.557.5989 Capabilities Data Sheet Solar Array Bypass Diode TD3163 Features • • • • • • Ultra Thin Construction Low leakage reverse current Low forward voltage drop Die metallization is solderable or weldable

pulse transformer transistor

Contextual Info: APPLICATION NOTE TRIPLE GALVANIC INSULATED HIGH SIDE DRIVING WITH TD310 by R. LIOU INTRODUCTION The TD310 is a triple MOS or IGBT driver which integrates all functions suited for compact and highly secure driving such as adjustable Under Voltage Lockout feature UVLO , sense comparator with alarm output and automatic shutdown,

TD310

Contextual Info: APPLICATION NOTE  TD310 USED IN A VOLTAGE QUADRUPLER by R. LIOU INTRODUCTION Figure 1 The TD310 is a triple MOS or IGBT driver which integrates all functions suited for compact and highly secure driving such as adjustable Under Voltage Lockout feature UVLO , sense comparator with alarm output and automatic shutdown,

TD180N

Abstract: eupec igbt eupec scr EUPEC TD162N kuka-2003-inhalt.qxd TD170N EUPEC Thyristor TD150N TD162N TD122N
Contextual Info: kuka-2003-inhalt.qxd 17.04.2003 10:34 Uhr Seite 25 Overview PowerBLOCK Thyristor/Diode Modules for Phase Control 3600 3400 3200 TD240N. 3000 2800 2600 * *) TD70N. 1800 TD375N. TD122N. TD140N. *) TD215N. 2000 TD150N. TD310N. 2200 TD430N.

TD310IN

Contextual Info: SGS-THOMSON TD310 0MDD S [l[LIi®M R!lD®@ TRIPLE IGBT/MOS DRIVER THREE POWER IGBT/MOS AND PULSE TRANSFORMER DRIVERS CURRENT SENSE COMPARATOR WITH 1ms INHIBITION TIME FUNCTION INSTANTANEOUS SIGNAL TRANSMISSION 0.6 Amp PER CHANNEL PEAK OUTPUT CURRENT CAPABILITY

AN854

Abstract: TD310
Contextual Info: APPLICATION NOTE TD310 USED IN A VOLTAGE QUADRUPLER by R. LIOU INTRODUCTION Figure 1 The TD310 is a triple MOS or IGBT driver which integrates all functions suited for compact and highly secure driving such as adjustable Under Voltage Lockout feature UVLO , sense comparator with alarm output and automatic shutdown,

operational amplifier

Abstract: TD310IN TD300IN TD310ID TD230ID TD230IN TD300ID mosfet power amplifier mosfet SO-16
Contextual Info: STANDARD LINEAR ICs POWER MOSFET DRIVER Type TD230ID TD230IN TD300IN TD300ID TD310ID TD310IN Description Electronic Circuit Breaker Electronic Circuit Breaker Mosfet and IGBT Triple Driver with Comparator and Operational Amplifier Mosfet and IGBT Triple Driver with Comparator and Operational Amplifier

TD3112

Abstract: IC power 22A Regulator
Contextual Info: Techcode DATASHEET 2.2A 380KHz 32V PWM Buck DC/DC Converter TD3112 General Description Features The TD3112 is a 380 KHz fixed frequency monolithic z 2.2A Constant Output Current step down switch mode regulator with a built in internal

Contextual Info: • ■ ■ i Santa AnaL Ana, C CA A_ Micmsemi m 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714.979.8220 FAX: 714.557.5989 Progresa P ow ered b y Technology TD3161 Capabilities Data Sheet Solar Array Bypass Diode Features Ultra Thin Construction Co-planar design; N and P contacts on topside

ARCAP AP1D

Abstract: AP1D PSI-Tronix ARCAP application of 7490 dupont delrin
Contextual Info: TD3120 Series – Compact Thermal Dispersion Sensors Rev. 4.02 • TD3120 Series flow sensors – solids/liquids/gases Compact Thermal Dispersion Sensors ■ Adjustable to wide range of flow rates, steplessly ■ No moving parts in the flow stream ■ LED status indication

water flow sensor

Abstract: Flow Sensors PSI-Tronix TD3100
Contextual Info: TD3180/90 Series – Thermal Dispersion Flow Sensors Rev. 4.02 • Operational Description The solid state sensor detects the dispersion/removal of heat from an element in the sensor. This removal of heat occurs as the media flows across the sensor, away from the heater. The heat

Diode C 30 PH

Abstract: MSC1046 TD3162
Contextual Info: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714.979.8220 FAX: 714.557.5989 TD3162 Solar Array Bypass Diode Features • • • • • • • Very Thin Construction Passivated mesa structure for very low leakage reverse currents Epitaxial structure minimizes forward voltage drop

TD3166

Abstract: MSC1049 solar blocking diode
Contextual Info: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714.979.8220 FAX: 714.557.5989 TD3166 Solar Array Blocking Diode Features • • • • • • Very Thin Construction Passivated mesa structure for very low leakage reverse currents Epitaxial structure minimizes forward voltage drop

TD310

Contextual Info: APPLICATION NOTE VOLTAGE QUADRUPLER USING TD310 by R. LIOU INTRODUCTION Figure 1 The TD310 is a triple MOS or IGBT driver which integrates all functions suited for compact and highly secure driving such as adjustable Under Voltage Lockout feature UVLO , sense comparator with alarm output and automatic shutdown,

pulse transformer transistor

Abstract: TD310 transformer triple insulated MEXICO Q2 introduction of pulse transformer
Contextual Info: APPLICATION NOTE TD310 USED IN A TRIPLE GALVANIC INSULATED HIGH SIDE DRIVING by R. LIOU INTRODUCTION The TD310 is a triple MOS or IGBT driver which integrates all functions suited for compact and highly secure driving such as adjustable Under Voltage Lockout feature UVLO , sense comparator with alarm output and automatic shutdown,

td310 in

Abstract: TD310IN TD310 AN461 L6380 TD310I
Contextual Info: TD310 TRIPLE IGBT/MOS DRIVER . . . . . . . . . THREE POWER IGBT/MOS AND PULSE TRANSFORMER DRIVERS CURRENT SENSE COMPARATOR WITH 1ms INHIBITION TIME FUNCTION INSTANTANEOUS SIGNAL TRANSMISSION 0.6 Amp PER CHANNEL PEAK OUTPUT CURRENT CAPABILITY LOW OUTPUT IMPEDANCE TYP :

thyristor

Abstract: TD104N TD180N SCR Control SCR Phase Control TD121N TD170N TD106N datasheet of thyristor TD250N POWERBLOCK
Contextual Info: Overview PowerBLOCK Thyristor/Diode Modules for Phase Control 3600 3400 3200 TD240N. 3000 2800 2600 * *) TD70N. 1800 TD385N. TD122N. TD140N. *) TD215N. 2000 TD150N. TD310N. 2200 TD430N. *) TD400N. 2400 *) 20 mm VRRM [V] 25 mm 30 mm 34 mm

Contextual Info: TD3173 Diodes General-Purpose Reference/Regulator Diode Military/High-RelN V Z Nom.(V) Reference Voltage75 @I(Z) (A) (Test Condition)2.0m Tolerance (%)5 P(D) Max. (W)400m Z(z) Max. (ê) Dyn. Imped.320 Temp Coef pp/10k10 Maximum Operating Temp (øC)175’