TD-42 F 04 Search Results

Contextual Info: VN B14N04/K14N04FM VNP14N04FI/VNV14N04 ’’OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TYPE VN B14N 04 VN K14N 04FM VNP14N 04FI VN V14N 04 Vclamp 42 42 42 42 V V V V R D S o n 0 .0 7 0 .0 7 0 .0 7 0 .0 7 Q. a n Cl 11im 14 14 14 14 A A A A . . . . . .

AKN62428

Abstract: 048576-WORD
Contextual Info: AKN62418 Series AKN62428 Series 524288-Word A KN62418, x 16-Bit/I 048576-Word A K N 62428 Series is x 8-Bit CMOS Mask Programmable ROM mask- PIN CONFIGURATION programmable ROM organized either as 524288-word x 16-Bit or as an 8-Mbit CM O S A K N 62418P, A K N 62428P

SGS-Thomson mosfet ipak

Abstract: VN MOSFET mosfet vn 10 1SS P
Contextual Info: S G S -T H O M S O N M D O ^m iC T IfM O lg l V N D 7 N 0 4 /V N D 7 N 0 4 -1 V N P 7 N 0 4 F I/K 7 N 0 4 FM "OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TYPE VND7N04 V N D 7N 04- 1 VNP7N04FI VNK7N04FM Vclam p 42 42 42 42 V V V V RDS on 11im 0.14 a. 0.14 Q.

n713

Abstract: vnp49n
Contextual Info: •THOMSON VNP49N04FI MOfôlSLl&rmfflDCS VNB49N04/VNV49N04 ’’OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TYPE Vclamp VNP49N 04FI VNB49N04 VN V49N 04 42 V 42 V 42 V R d S< o i i 0.02 Q 0.02 Cl 0.02 £2 lllm 49 A 49 A 49 A . . . . . LINEAR CURRENT LIMITATION

Contextual Info: VNP28N04FI VNB28N04/VNV28N04 ’’OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TYPE V clamp R D S o n I lim VNP28N 04FI VN B28N 04 VN V28N 04 42 V 42 V 42 V 0.0 35 Q. 0 .0 3 5 a 0.0 35 n 28 A 28 A 28 A . . . . . . LINEAR CURRENT LIMITATION THERMAL SHUT DOWN

Contextual Info: rz J Ä T# S C S -T H O M S O N [M G IM llL iO T » ! V N H 100N 04 ’’OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TA R G E T D A T A TYPE Vclamp RDS on 1lim VN H 100N04 42 V 0 .0 1 2 Û 100 A . . . . . . . . . . LINEAR CURRENT LIMITATION THERMAL SHUT DOWN

SGS-Thomson mosfet

Contextual Info: H Z! SGS-THOMSON ESII lS@IILICTi B!lllGi VNH100N04 "OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TARGET DATA TYPE Velamp RoS on him VN H 100N 04 42 V 0 .0 1 2 n 100 A . • ■ . ■ . ■ . . . LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION

SKM224A

Contextual Info: Absolute Maximum Ratings Symbol VDS VDGR ID IDM VGS PD Tj, Tstg Visol humidity climate Conditions 1 RGS = 20 kΩ Tcase = 25 °C Tcase = 85 °C AC, 1 min DIN 40 040 DIN IEC 68 T.1 Values Units 200 200 120 87 360 ± 20 500 – 55 . . .+150 2 500 Class F 55/150/56

41C0R

Abstract: ISO 11452-3 5Z27 DIODE C18090 Q62705-K714 t-5Z27 DIODE TLE4941C
Contextual Info: Data Sheet, V 2.1, April 2005 TLE4941 TLE4941C Differential Two-Wire Hall Effect Sensor IC Se n so rs N e v e r s t o p t h i n k i n g . Edition 2005-04 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 München, Germany Infineon Technologies AG 2005.

8414 hr papst

Contextual Info: Kompaktlüfter für Gleich- und Wechselspannung Ausgabe 2015-04 Trendsetter in der Lüftertechnologie Kompromisslose Qualität made by ebm-papst Zu den Besten gehören Mit innovativen Technologien Trends setzen. Den Kunden zuhören. Aus den Anforderungen der Praxis neue Ideen entwickeln und mit Pioniergeist in die Tat umsetzen. Mit dieser Philosophie ist ebm-papst zum

Contextual Info: Æ T S G S -1H 0M S 0N D lsi S IIL[lCTIs! iD©S VNW50N04A ’’OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TYPE V clamp R D S (o n ) I lim VNW 50N 04A 42 V 0.012 Q. 50 A . . . . . . . . . . LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION

Contextual Info: zurück back Absolute Maximum Ratings Values S ym bol C o nd itio ns 1 V ds V dgr Id U nits Rge = 20 kW T1case = 2 5 °C v-' Tcase = 100 °C 1 ms Idm V gs Pd Tj, Tstg) V isol humidity climate AC, 1 min., 200 mA DIN 40 040 DIN IEC 68 T.1 200 200 250 150 750

B9 DG

Contextual Info: S E M IC O N D U C T O R tm w w w .fa irc h ild s e m i.c o m T D C 1 049 High-Speed A/D C o n v e rte r 9-Bit, 30 Msps Features • 30 Msps conversion rate, 15 MHz analog bandwidth • 9-Bit resolution and linearity • Sample-and-hold circuit not required

100N04

Abstract: p 471 mosfet
Contextual Info: c ? SGS-IHOMSON • v # M€ra§ ilLiCTI3@ilû S VNW100N04 ”OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TYPE V c la m p R D S o n ) him VN W 100N 04 42 V 0 .0 1 2 n 100 A • . . ■ . ■ ■ ■ ■ ■ LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION

50n04

Abstract: 50N04A
Contextual Info: r z 7 Ä T# S G S R - T H O M S O N Î L i M ! 0 gS V N W 50N04A ’’OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TYPE Vclamp R D S (o n 11i m VN W 50N 04A 42 V 0.0 12 Î2 50 A . LINEAR CURRENT LIMITATION . THERMAL SHUT DOWN . SH O R TC IR C U IT PROTECTION

SKM191F

Abstract: skm 191 skm 191F semikron skm 191
Contextual Info: s e M IK R D n SEMITRANS M Power MOSFET Modules Absolute Maximum Ratings Symbol Conditions V ds V dgr R g s = 20 k n Id I dm V gs Pd T . Tstg Visol h u m id ity c lim a te A C , 1 m in , 200 |iA DIN 4 0 040 DIN IE C 6 8 T .1 Values Units 1000 1000 28 110

AN-994

Abstract: IRF3704 IRF3704L IRF3704S IRF3707 IRF3707L IRF3707S
Contextual Info: 2002-02-04 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 71-146-89 IRF3707 HEXFET TO-220 PD - 93937A IRF3707 IRF3707S IRF3707L SMPS MOSFET Applications l High Frequency DC-DC Isolated

RQK0303MGDQATL-E

Abstract: RQK0303MGDQA SC-59A
Contextual Info: RQK0303MGDQA Silicon N Channel MOS FET Power Switching REJ03G1276-0400 Rev.4.00 Jun 15, 2006 Features • Low on-resistance RDS on = 42 mΩ typ (VGS = 10 V, ID = 1.8 A) • Low drive current • High speed switching • 4.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A

Contextual Info: Æ T S G S - 1 H M S N n lsi S IIL[iCTIsî iD©S V N W 100 N 04 ’’OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET P R E L IM IN A R Y D A T A TYPE V clamp RDS(on) 11im VNW 100N 04 42 V 0 .012 Q. 1 00 A . . . . . . . . . . LINEAR CURRENT LIMITATION THERMAL SHUT DOWN

skm253b

Abstract: 020x
Contextual Info: Absolute Maximum Ratings Values Symbol Conditions 1 VDS VDGR ID IDM VGS PD Tj, Tstg) Visol humidity climate Units RGE = 20 k Ω Tcase = 25 °C Tcase = 100 °C 1 ms AC, 1 min., 200 µA DIN 40 040 DIN IEC 68 T.1 200 200 250 150 750 ± 20 1000 –40 . +150 (125)

14T40

Abstract: 14T50 14020 14P5 14T100 14D150 ESC Electronics 14T30 G20w 14D15
Contextual Info: □IGI1A1I DELAY LINES TTL COMPATIBLE 5 TAPS •SINGLE* DUAL 'TRIPLE . < 14 PIN PACKAGE : 11E SERIES 14Tg14G,14D AND 14P D | 3 0 3 7 2 5 ? E S C 0 0 0 044 4 E L E C T R O N IC S S | 1:' T -W -/3 CORP White Dot locates Pin 1 O N L Y A C T IV E P IN S ARE SUPPLIED

Contextual Info: Data Sheet PA2690T1R R07DS1000EJ0101 Rev.1.01 Mar 04, 2013 COMPLEMENTARY MOSFET 20V, 4.0A, 42mΩ / –20V, –3.0A, 79mΩ Description The μPA2690T1R is Dual N- and P-channel MOS Field Effect Transistors for switching application. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications

M253B

Contextual Info: Absolute Maximum Ratings Values Symbol Conditions 1 VDS VDGR ID IDM VGS PD Tj, Tstg) Visol humidity climate Units RGE = 20 k Ω Tcase = 25 °C Tcase = 100 °C 1 ms AC, 1 min., 200 µA DIN 40 040 DIN IEC 68 T.1 200 200 250 150 750 ± 20 1000 –40 . +150 (125)

Contextual Info: Absolute Maximum Ratings Symbol VDS VDGR ID IDM VGS PD Tj, Tstg Visol humidity climate Conditions 1 RGS = 20 kΩ AC, 1 min DIN 40 040 DIN IEC 68 T.1 Values Units 800 800 36 144 ± 20 700 – 55 . . .+150 2 500 Class F 55/150/56 V V A A V W °C V 36 144 A