RQK0303MGDQA Search Results

RQK0303MGDQA Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
RQK0303MGDQA		Renesas Technology	Silicon N Channel MOS FET Power Switching	Original	PDF	83.21KB	7
RQK0303MGDQA		Renesas Technology	Silicon N Channel MOS FET Power Switching	Original	PDF	98.05KB	7
RQK0303MGDQATL-E		Renesas Technology	Transistor Mosfet N-CH 30V 3.7A 3MPAK T/R	Original	PDF	83.23KB	7

RQK0303MGDQA Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: Preliminary Datasheet RQK0303MGDQA R07DS0306EJ0600 Rev.6.00 Jan 10, 2014 Silicon N Channel MOS FET Power Switching Features • Low on-resistance RDS on = 42 mΩ typ (VGS = 10 V, ID = 1.8 A) • Low drive current • High speed switching • 4.5 V gate drive	Original	RQK0303MGDQA R07DS0306EJ0600 PLSP0003ZB-A	PDF
RQK0303MGDQATL-E Abstract: RQK0303MGDQA SC-59A Contextual Info: RQK0303MGDQA Silicon N Channel MOS FET Power Switching REJ03G1276-0200 Rev.2.00 Oct 19, 2005 Features • Low on-resistance RDS on = 42 mΩ typ (VGS = 10 V, ID = 1.8 A) • Low drive current • High speed switching • 4.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A	Original	RQK0303MGDQA REJ03G1276-0200 PLSP0003ZB-A RQK0303MGDQATL-E RQK0303MGDQA SC-59A	PDF
Contextual Info: RQK0303MGDQA Silicon N Channel MOS FET Power Switching REJ03G1276-0300 Rev.3.00 Dec 21, 2005 Features • Low on-resistance RDS on = 42 mΩ typ (VGS = 10 V, ID = 1.8 A) • Low drive current • High speed switching • 4.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A	Original	RQK0303MGDQA REJ03G1276-0300 PLSP0003ZB-A	PDF
Contextual Info: Preliminary Datasheet RQK0303MGDQA R07DS0306EJ0500 Previous: REJ03G1276-0400 Rev.5.00 Mar 28, 2011 Silicon N Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 42 m typ (VGS = 10 V, ID = 1.8 A)  Low drive current  High speed switching	Original	RQK0303MGDQA R07DS0306EJ0500 REJ03G1276-0400) PLSP0003ZB-A 150ctronics	PDF
Contextual Info: Preliminary Datasheet RQK0303MGDQA R07DS0306EJ0500 Previous: REJ03G1276-0400 Rev.5.00 Mar 28, 2011 Silicon N Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 42 m typ (VGS = 10 V, ID = 1.8 A)  Low drive current  High speed switching	Original	RQK0303MGDQA R07DS0306EJ0500 REJ03G1276-0400) PLSP0003ZB-A	PDF
RQK0303MGDQATL-E Abstract: RQK0303MGDQA SC-59A Contextual Info: RQK0303MGDQA Silicon N Channel MOS FET Power Switching REJ03G1276-0400 Rev.4.00 Jun 15, 2006 Features • Low on-resistance RDS on = 42 mΩ typ (VGS = 10 V, ID = 1.8 A) • Low drive current • High speed switching • 4.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A	Original	RQK0303MGDQA REJ03G1276-0400 PLSP0003ZB-A RQK0303MGDQATL-E RQK0303MGDQA SC-59A	PDF
RJP63k2 Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606 Contextual Info: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching	Original	R07CS0003EJ0100 RJP63k2 rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606	PDF
rjh3047 Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055 Contextual Info: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing	Original	REJ01G0001-0400 rjh3047 rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055	PDF
RJJ0319DSP Abstract: BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram Contextual Info: 2012.01 Renesas Discrete General Catalog Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Bipolar Transistors for Switching Amplification Transistors Product Numbers Applications Diodes What gives rise to this sort of encounter?	Original	R07CS0003EJ0200 RJJ0319DSP BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram	PDF
rjp6065 Abstract: RJP6006 rjp3053 rjh60f5 TRANSISTOR SMD MARKING CODE jg BCR1AM-12A equivalent RJH60F7 RJP3063 triac kt 207 600v RJP6006DPK Contextual Info: 2009.12 Renesas Discrete General Catalog Transistor/Diode/Triac/ Thyristor www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Amplification Transistors Power Devices Non-MOS Low-voltage MOS Low switching loss and high speed High-voltage MOS Package current capacity and thermal resistance	Original		PDF
rjp3053 Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009 Contextual Info: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5	Original	REJ16G0001-1900 rjp3053 RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009	PDF
RQK0303MGDQA Abstract: RQK0303MGDQATL-E SC-59A Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original		PDF