TD DIODE Search Results

1838 t

Abstract: 1838t IR 1838 T IR 1838 T datasheet D-10 IRGPH50MD2 c485
Contextual Info: IRGPH50MD2 90% Vge +Vge Same type device as D.U.T. Vce Ic 430µF 80% of Vce 90% Ic 10% Vce Ic D.U.T. 5% Ic td off tf Eoff = ∫ t1+5µS Vce ic dt t1 Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode) , trr, Qrr, Irr, td(on) , tr, td(off) , tf

D-10

Abstract: IRGPH50MD2 1838t
Contextual Info: IRGPH50MD2 90% Vge +Vge Same type device as D.U.T. Vce Ic 430µF 80% of Vce 90% Ic 10% Vce Ic D.U.T. 5% Ic td off tf Eoff = ∫ t1+5µS Vce ic dt t1 Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode) , trr, Qrr, Irr, td(on) , tr, td(off) , tf

IRGBC20FD2

Abstract: diode 18b diode 18C D-12 DIODE T4 T4 DIODE diode c100 18-A
Contextual Info: IRGBC20FD2 90% Vge +Vge Vce Same type device as D.U.T. Ic 90% Ic 10% Vce Ic 5% Ic 430µF 80% of Vce td off D.U.T. tf Eoff = Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode) , trr, Qrr, Irr, td(on), tr, td(off), tf t1 ∫ t1+5µS Vce ic dt

rl 724 n

Abstract: 1SV202 1SV202BWT OF VR 10K
Contextual Info: 1SV202BWT VHF / UHF VARIABLE CAPACITANCE DIODE FEATURES PINNING Low matching error. DESCRIPTION PIN High capacitance ratio. n=6.3min Low series resistance. (rs=0.57Ω) 1 Cathode 2 Anode 2 1 TD Top View Marking Code: "TD" Simplified outline SOD-523 and symbol

1SV202BWT

Abstract: 1SV202
Contextual Info: 1SV202BWT VHF / UHF VARIABLE CAPACITANCE DIODE PINNING FEATURES DESCRIPTION PIN • Low matching error • High capacitance ratio n = 6.3 min 1 Cathode 2 Anode • Low series resistance (rs = 0.57 Ω) 2 1 TD Top View Marking Code: "TD" Simplified outline SOD-523 and symbol

Contextual Info: □ IXYS Advanced Technical Information IXGH 31N60D1 IXGT 31N60D1 Ultra-LowVCE sat IGBT with Diode V CES = 600 V = 60 A = 1.7 V ^C25 V CE(sat) Combi Pack Symbol Test Conditions Maximum Ratings V CES Td = 25°C to 150°C 600 V V CGR Td = 25°C to 150°C; RGE = 1 M£i

Contextual Info: □IXYS Advanced Technical Information Ultra-LowVCE sat IGBT with Diode IXGH 28N60B IXGT 28N60B V CES = 600 V = 40 A = 2.0 V ^C25 V CE(sat) Combi Pack Symbol TestConditions v CES Td = 25°C to 150°C 600 V VCGR Td = 25°C to 150°C; RGE = 1 M£i 600 V VGES

AN-994

Abstract: IRL1004
Contextual Info: IRL1004S/LPbF Electrical Characteristics @ TJ = 25°C unless otherwise specified ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Qg Qgs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage

Contextual Info: □ IXYS H H ifl JL æ* X HiPerFAST IGBT with Diode Lightspeed Series IXGH 24N60CD1 IXGT 24N60CD1 V CES C25 V CE sat = 600 V = 48 A = 2.5 V Preliminary data sheet Symbol Test Conditions v CES Td = 25°C to 150°C 600 V V CGR Td = 25°C to 150°C; RGE = 1 M£i

1N3716

Abstract: 1N3717 1N3712 TD-26EA 1N3715 TD-205A 1N3713 1N3714 TD-253A 1N3718
Contextual Info: TUNNEL DIODES GENERAL PURPOSE For Switching, Oscillators, Am plifiers, Converter Circuits and Threshold Detectors. GE TY P E + 1 0 0 °C O peration TD-1 -|-100o C S u b m in ia tu re P ack age TD -2 0 0 <2> Ip P eak P oint C u rre n t mA lv V a lle y Point

Contextual Info: □ IXYS HiPerFAST IGBT with Diode V CES IXGK 50N50BU1 IXGK 50N60BU1 ^C25 500 V 75 A 600 V 75 A V CE sat tfi 2.3 V 2.5 V 100ns 120ns Combi Pack Preliminary data Symbol Maximum Ratings Test Conditions 50N50 V V CGR Td = 25°C to 150°C Td = 25°C to 150°C; RGE = 1 M£i

Electronic ignitors for HID lamp circuits

Abstract: piezoelectric igniter IR2101 full bridge uba2030 igniter transformer Philips PR02 IGNITER COIL igniter mc34262 Ignition Transformer philips
Contextual Info: Subject : MHN-TD 70W Driver with UBA2030 Pages: 39 Summary : This report describes a lamp driver concept intended for the MHL-TD 70W lamp Metal Halide Lamp used in general lighting applications. The circuit is a cascade of a buck converter and commutator. The latter is driven by

Contextual Info: nixYS Advanced Technical Information IXFX 90N30 IXFK 90N30 HiPerFET Power MOSFETs VDSS Single MOSFET Die Maximum Ratings TestConditions V Td = 25°C to 150°C Td = 25°C to 150°C; RGS = 1 M£i 300 300 V V Continuous Transient ±20 ±30 V V Tc Tc Tc Tc

Contextual Info: □IXYS Advanced Technical Information HiPerFET Power MOSFETs IXFX 180N10 IXFK 180N10 ID25 = 100 V = 180 A 8 mQ DS on Single MOSFET Die trr < 250 ns » Maximum Ratings PLUS247™ Symbol Test Conditions V Td = 25°C to 150°C Td = 25°C to 150°C; RGS = 1 M£i

Contextual Info: □ IXYS HiPerFET IXFH /IXFM 10 N90 IXFH /IXFM 12 N90 IXFH13N90 Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family Maximum Ratings TestConditions V v DGR Td = 25°C to 150°C Td = 25°C to 150°C; RGS = 1 M£i 900 900 V V V GS

Contextual Info: □ IXYS Advanced Technical Information HiPerFET Power MOSFETs IXFX 44N60 IXFK 44N60 600 V 44 A 130 mQ V,DSS ^D25 R DS on Single MOSFET Die t rr < 250 ns Maximum Ratings Symbol Test Conditions V VDGR Td = 25°C to 150°C Td = 25°C to 150°C; RGS = 1 M£i

TOp-264 vg

Contextual Info: □ IXYS Preliminary data V DSS HiPerFET Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Lowtrr Test Conditions Maximum Ratings V DSS Td = 25°C to 150°C 200 V v DGR Td = 25°C to 150°C; RGS = 1 M£i 200 V VGS VGSM Continuous ±20

Contextual Info: □ IXYS v HiPerFET ^D25 D DS on 500 V 50 A 100 mQ 500 V 55 A 80 mQ t rr < 250 ns IXFX 50N50 IXFX 55N50 Power MOSFETs DSS Single MOSFET Die Preliminary data sheet Maximum Ratings Symbol TestConditions V Td = 25°C to 150°C Td = 25°C to 150°C; RGS = 1 M£i

Contextual Info: □ IXYS HIPerFET IXFK90N20Q IXFK90N20QS Power MOSFETs V DSS ^D25 D DS on Q Class Symbol Test Conditions Maximum Ratings V DSS Td = 25°C to 150°C 200 V Td = 25°C to 150°C; RGS = 1 M£i 200 V VGS Continuous ±20 V V GSM Transient ±30 V DGR ^D25 Tc = 25°C

Contextual Info: VMO 550-01F VDSS Id25 HiPerFET MOSFET Module ^ D S o n = 100V “ 590 A “ 2 .1 m O N-Channel Enhancement Mode Preliminary Data (pS Maximum Ratings Symbol Test Conditions vv DSS Td = 25°C to 150°C 100 V v DGR Td = 25°C to 150°C; RGS = 10 kß 100

1058R3C

Abstract: ccd marking zener diode 1058N6C trw resistor zener b27 ADC-304 TDC1058 1N3062 1N5711 CXA1096P
Contextual Info: TDC1058 rn v w Monolithic Video A/D Converter 8-Bit, 20Msps, Low Power The T R W TD C1058 is a flash analog-to-digital converter capable of converting a video-speedi signal into a stream of 8-bit digital words at 20 M sp s M egaSam ples Per Second . Since the TD C1058 is a flash converter, a

Contextual Info: □IXYS High Current MegaMOS FET IXTK 74 N20 IXTH 68 N20 V DSS ^D25 200 V 200 V 74 A 68 A D DS on 35 mQ 35 mQ N-Channel Enhancement Mode Preliminary data Symbol Maximum ratings Test conditions V DSS Td = 25°C to 150°C 200 V v DGR Td = 25°C to 150°C; RGS=1.0 M£2

Contextual Info: □ IXYS Advanced Technical Information H iP e r F A S T IG B T L ig h t s p e e d ™ S e r ie s IXGH 12N60CD1 Symbol TestC onditions Maximum Ratings V CES Td = 25°C to 150°C 600 V V CGR Td = 25°C to 150°C; RGE = 1 M£i 600 V V GES Continuous ±20

Contextual Info: DATA SHEET SKY12207-306LF: 0.9 to 4.0 GHz 50 W High Power Silicon PIN Diode SPDT Switch Applications • Transmit/receive switching and failsafe switching in TD-SCDMA, WiMAX, and LTE base stations  Transmit/receive switching in land mobile radios and military