TCTK Search Results

Contextual Info: 0044 0 118 979 1238 0044(0)118 979 1283 info@act crystals.com ACT TCTK75-6 LOW POWER HCMOS 1/60Hz~32.768kHz TCXO ● Stability: ±5ppm (-40+85°C) ● Accuracy: ±1.5ppm ● Operating current: 400nA typical Characteristics Frequency Range (MHz) 32.768 kHz, 4.096 kHz, 1.024 kHz

TCTK 系列

Contextual Info: TOKEN TCTK 立式插件型 環型電感器 環型線圈 環型電感器 環型線圈 產品簡介 德鍵 TCTK 系列環型線圈，採用高級鐵粉芯與專用樹脂等作材料，以產生最大的 電感量，高電流，防干擾對策，是功率電感最常用的一種。

refrigerator

Abstract: POWER INDUCTOR toroidal inductors vertical section of monitor microwave oven Toroidal Coils Power Inductor TV vertical section toroidal
Contextual Info: TOKEN TCTK Toroidal Coils Power Inductor Toroidal Coil Power Inductor Toroidal Inductors with closed magnetic circuit for lowest EMI TCTK Preview Toroidal coils are electronic components with the high performers among inductors, typically consisting of a circular ring-shaped magnetic core of iron powder, ferrite, or other material around which wire is

information applikation

Abstract: DL193D information applikation mikroelektronik Mikroelektronik Information Applikation mikroelektronik Heft 12 "Mikroelektronik" Heft mikroelektronik applikation VEB mikroelektronik applikation heft DL192D
Contextual Info: [ H n in k ^ t M E le l- c f a n a n il- c Information Applikatiùn Auf ein Wort: Werte Nutzer dieser Applikations-Hefte! Das Tempo der Entwicklung in der Mikroelektronik erfordert, ständig neue Informationen über Bauelemente und ihre mögliche Anwendung

Contextual Info: VLSL30 www.vishay.com Vishay Semiconductors High Brightness LED Power Module FEATURES • Metal core PCB: Cu based • Single side/single layer PCB • Shiny white surface • 24 LEDs minimum 87 lm at 350 mA • Conductive top layer: Cu • Isolation layer prepreg type R1566

D78323LP

Abstract: IC-8314 47 16L xn cs1m MSC 5511 tj1k IRKT 132 pd78312 mcl sbl 1 t002 94-0
Contextual Info: Mos M O S In te g ra te d C irc u it PD78323,78324 1 6 / 8 f c i- y //PD78324 l ì , b • '> > 7 7 ” - — 9 ¡S'i'4f£l6 fcf -y h CPU £ \HM L tz 16/8 tf >y h • v > U —XCO l o t t o « M > S î7 ^ P D 7 3 3 2 2 d it'" * , -y 7° • f tS M "E U ^ « S r ^ ï C l M

3T160

Abstract: ORP10 NT80
Contextual Info: 3. 3.1 ELECTRICAL CHARACTERISTICS UPD70335-8, 70335-10 Absolute maxi m u m ratings Pa r a m e t e r Ta=25°C Symbol Test c o n d i t i o n Ratings Unit V DD -0.5 to +7.0 V V TH -0.5 to Vpju+0.5 V VI -0.5 to V D D +0.5 V vO -0.5 to Vjjjj+0.5 V P ower suppl y v o l t a g e

Philips FA 291 AMPLIFIER

Abstract: P80C32 Philips FA 291 Philips FA 297 AMPLIFIER
Contextual Info: blE T> NAPC/PHILIPS SEMICOND • bhSBTEH D m 2 0 7 E Philips Semiconductors Microcontroller Products Product specification CMOS single-chip 8-bit microcontrollers DESCRIPTION FEATURES The Philips 80C32/80C52/87C52 is a high-performance microcontroller fabricated

Contextual Info: OKI Sem iconductor MSM5416273 P relim inary 262,144 -Word x 16 Bits Multiport DRAM_ Rev.t.o GENERAL DESCRIPTION* The MSM5416273 is a 4-Mbit CMOS m ultiport DRAM composed of a 262,144-word by 16-bit dynamic RAM and a 512-words by 16-bits SAM. Its RAM and SAM operate independently and

LTC1060CN

Contextual Info: jy w « » a m TECHNOLOGY Universal Dual Filter Building Block FCRTURCS DCSCRIPTIOfl • Guaranteed Filter Specification for ±2.37V and ±5V Supply ■ Operates up to 30kHz ■ Low Power and 88dB Dynamic Range at ±2.5V Supply ■ Center Frequency Q Product up to 1.6MHz

TA51B

Contextual Info: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿ P D 4 8 8 1 3 0 L 16M-BIT Rambus DRAM 1M-WORD X 8-BIT X 2-BANK Description The 16-M egabit Rambus DRAM RDRAM™ is an extrem ely-high-speed CMOS DRAM organized as 2M w ords by 8 bits and capable o f bursting up to 256 bytes of data at 2 ns per byte. The use of Rambus S ignaling

Contextual Info: 6. ELECTRICAL CHARACTERISTICS Absolute maximum ratings Ta-25°C Parameter Symbol Power supply voltage Input voltage Output voltage Teat condition Ratings Units VDD -0.5to+7.0 v a v dd -0.5toVDD+°.5 V VPP -O.5to+13.5 V AVSS -0.5to+0.5 V VII Except for P20/NMI

Centronics 36 port drawing

Abstract: system on a chip
Contextual Info: — V _Highly Intégrât« M IÉ I B W RISController IDT79RC36100™ V ID I F eatures * Instruction set compatible with the RISCore32 family of CPU s * System-level integration minimizes system cost ' 32-bit R IS C C PU 4KB instivction cache on-chip

STK 3048

Abstract: 127U stk 014 8cbc
Contextual Info: NOTE m s POH'IIOT E THE HttPEBTT Qf JUIO £>19000 PHOPBETMr IIHWMAnOH Of THE BtRC Ü ic n p m s . INC. MO IWT OF BC mronwrxm BOIW OH IMS OOCUMPn- MW 9t USED IWAKT » ff WITHOn THE WtntH CONStHT OF B SC ELECTIONCS. INC- r o w E -3M7 BW 8/U PRODUCT NUMBER SEE TABLE

208PQ

Abstract: UX SERIES MOTOROLA
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MPA Features and Characteristics The features ot each FPGA member are tabulated to show logic cells, internal flip-flops, I/O cell flip-flops, equivalent gates, signal I/O pads and packages see Table 2-2 . 2 In addition, FPGA densities can only be meaningfully

r1566

Abstract: prepreg voltage isolation VLSL31 VLMW711T3U2US
Contextual Info: VLSL31 Vishay Semiconductors High Brightness LED Power Module FEATURES • Metal core PCB: Cu based • Single side/single layer PCB • Shiny white surface • 24 LED’s minimum 76 lm at 350 mA • Conductive top layer: Cu 20783 • Isolation layer prepreg type R1566

inductors 22 micro henry coil

Abstract: inductors 10 micro henry inductors 500 micro henry choke coil inductor chokes for tube lights AC toroidal choke 1 microhenry inductor inductors 15 micro henry Toroidal Coils Power Inductor car amp toroidal core
Contextual Info: TOKEN THROUGH HOLE INDUCTORS Token Electronics Industry Co., Ltd. Taiwan: No. 137, Sec. 1, Chung Shin Rd., Wu Ku Hsiang, Taipei Hsien, Taiwan, R.O.C TEL: 886-2-2981 0109; FAX: 886-2-2988 7487 China: 12F, Zhongxing Industry Bld., Chuangye Rd., Nanshan District, Shenzhen, Guangdong

Contextual Info: TOKEN THROUGH HOLE INDUCTORS Token Electronics Industry Co., Ltd. Taiwan: No. 137, Sec. 1, Chung Shin Rd., Wu Ku Hsiang, Taipei Hsien, Taiwan, R.O.C TEL: 886-2-2981 0109; FAX: 886-2-2988 7487 China: 12F, Zhongxing Industry Bld., Chuangye Rd., Nanshan District, Shenzhen, Guangdong

AM79928

Contextual Info: f 0257527 ADV MICR O T EL E C O M ? d' 69C 1 9 7 2 9 ADV MICRO {TELECOM} b4 DE | 0SS7SS7 0 G n 7 5 T T-75-49 7 T Am7992B a Serial Interface Adapter (SIA DISTINCTIVE CHARACTERISTICS Compatible with Ethernet/Cheapernet/IEEE-802.3 specifications Crystal controlled Manchester Encoder

IR3T03

Abstract: nec upd 1511 PJO 389 J7EA WAAI wj m11x 117 AJG M11X saft* NSP apl 117
Contextual Info: y—S •5/—h r IM E C ^ M o ssM tm ss M OSIntegratedCircuit juPDI 7 2 0 1 A , 1 7 2 0 7 A/D3>y<—9fàW. LCD3V ¡ v ^ y f •v ^ n s v h n - ^ 4 ¿/PD17201A, 17207 Ü L C D =» > h n - 7 1 K 7 4 ''n f 3 J| X £ > f c â k ? H & Ij ^ — h • 3 > F d A /D 3

ltls

Abstract: C1991 LYPR ispLS11048 SAAB
Contextual Info: ispLSr 1032 ; ! ! L •■■■■■ a L A T T IC E î î ï S in-systsm programmable Large Scale Integration 3 SE M IC O N D U C T O R U S m qfm Q ur M LiE s a a b ' m Qooisaa h * l a t D Functional BiocfC Diagramp- mi • In-system programmable HIGH DENSITY LOGIC

NEC RDRAM 18

Abstract: RDRAM RAMBUS NEC Rambus RDRAM Clock PD488170
Contextual Info: NEC . NEC Electronics Inc. pPD488130, 488170 18-Megabit Rambus DRAM Advance Information Description The /JPD488130 and /L/PD488170 Rambus DRAMs RDRAM™ are extremely-high-speed dynamic CMOS RAMs organized as 2M words by 8 or 9 bits. Using its sense amplifiers as a cache, the RDRAM bursts up to

r1566

Abstract: VLMW711U2U3XV prepreg lm 2160
Contextual Info: VLSL30 Vishay Semiconductors High Brightness LED Power Module FEATURES • Metal core PCB: Cu based • Single side/single layer PCB • Shiny white surface • 24 LED’s minimum 87 lm at 350 mA • Conductive top layer: Cu 20783 • Isolation layer prepreg type R1566

PAL16L8 programming algorithm

Abstract: pal 20 medium PAL16R4A-2
Contextual Info: Programmable Array Logic PAL 20-Pin Medium PAL Family General Description The 20-pin Medium PAL family contains four of the most popular PAL architectures used in industry. National Semi­ conductor’s advanced Schottky TTL process with titanium tungsten fusible links is used in manufacturing the standard,