TCS2S Search Results

MWS5101

Abstract: MWS5101AEL3 CDP1822 MWS5101A MWS5101ADL3 MWS5101AEL2 MWS5101AEL3X MWS5101DL3X MWS5101EL2 MWS5101ELS
Contextual Info: MWS5101, MWS5101A 256-Word x 4-Bit LSI Static RAM March 1997 Features Description • Industry Standard Pinout The MWS5101 and MWS5101A are 256 word by 4-bit static random access memories designed for use in memory systems where high speed, very low operating current, and

Contextual Info: T O S H IB A INTEGRATED CIRCUIT D IG IT A L IN T E G R A T E D T C 5 2 3 1 2 5 A ? / A J - 10 T O S H IB A TECHNICAL DATA S IL IC O N GATc C S C JIT , T C 5 2 8 1 2 S A ? / A J - 12 CM O S P R E L IM IN A R Y 131 , Q72 W O R D S x SB II S M U L T iP O R T D R A M

RCA-MWS5101

Abstract: MWS5101
Contextual Info: ^ 22 21 20 Id 16 17 16 15 14 13 12 TOP V‘ EW — — — — — — — — — — — V 0D A4 R/W Ê3T 0 .0 . CS2 004 014 003 0 13 002 9 2 C S -2 99 7 6R I T E R M IN A L ASSIGNMENT 256-Word by 4-Bit LSI Static Random-Access Memory Features: • In d u s try standard pin o u t

CDP1822

Abstract: CDP1822D CD182 CDP1822CD CDP1822C CDP1822CDX CDP1822CE CDP1822CEX CDP1822E CDP1822EX
Contextual Info: CDP1822, CDP1822C S E M I C O N D U C T O R 256-Word x 4-Bit LSI Static RAM March 1997 Features Description • Low Operating Current - VDD = 5V, Cycle Time 1µs . . . . . . . . . . . . . . . . . . 8mA The CDP1822 and CDP1822C are 256-word by 4-bit static

CDP1822

Contextual Info: ¡HI HARRIS CDP1822 822 S E M I C O N D U C T O R 256-Word x 4-Bit LSI Static RAM February 1992 Features Description • Low Operating Current - VDD = 5V, Cycle Time 1ns.8mA The CDP1822 and CDP1822C are 256-word by 4-bit static

2N4839

Abstract: TO114 package 2N5860 2N1724A 2N3714 2N3715 2N3716 2N3789 2N3790 2N3792
Contextual Info: GENERAL TRANSISTOR CORP 24E D • 3^SaD01 DODOD^ fi ■ General Transistor Corporation CASE TO-3, TO-39 lc MAX =3-50A Vceo(sus) s40-100V 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 (213) 673-8422 • Telex 65-3474 * FAX (213) 672-2905 T - 3 3 - o i

CDP1822CD

Abstract: CDP1822 CDP1822C CDP1822CDX CDP1822CE CDP1822CEX CDP1822D CDP1822E CDP1822EX
Contextual Info: CDP1822, CDP1822C 256-Word x 4-Bit LSI Static RAM March 1997 Features Description • Low Operating Current - VDD = 5V, Cycle Time 1µs . . . . . . . . . . . . . . . . . . 8mA The CDP1822 and CDP1822C are 256-word by 4-bit static random-access memories designed for use in memory systems where high speed, low operating current, and simplicity

MWS5101

Contextual Info: S MWS5101, MWS5101A S e m ico n d ucto r 7 256-Word x 4-Bit LSI Static RAM March 1997 Features Description • Industry Standard Pinout The MWS5101 and MWS5101A are 256 word by 4-bit static random access memories designed for use in memory systems where high speed, very low operating current, and

UPEK

Abstract: tcd50d TCESC4K UPEK TCS4K TCS4K "Fingerprint Sensors" tcd50 TCS4H TCEFC1 fingerprint TCD50D
Contextual Info: UPEK Embedded Fingerprint Sensor Solutions Proven technology UPEK’S PROVEN, EASY-TO-INTEGRATE FINGERPRINT SENSORS ARE THE MOST SECURE AND EASIEST TO USE ON THE MARKET. Proven UPEK’s proven silicon fingerprint sensors and solutions have been embedded into millions of devices such as laptops,

Contextual Info: FU JI 2SK2473-01 N-channel MOS-FET FAP-II Series 300V > Features - 0,2Q 20A 125W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage Vgs = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators

MWS5101EL3

Abstract: MWS5101EL2
Contextual Info: i!R H A R R IS \MJ MWS5101 M W S 51Û 1A S E M I C O N D U C T O R 256-Word x 4-Bit LSI Static RAM February 1992 Features Description • Industry Standard Pinout The MWS5101 and MW S5101A are 256 word by 4 bit static random access memories designed for use in memory

TL05A

Contextual Info: FU JI 2SK2638-01 MR N-channel MOS-FET 450V FAP-IIS Series 10A 50W > Outline Drawing > Features - 0 ,6 5 Q High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Repetitive Avalanche Rated > Applications

Contextual Info: Random-Access Memories RAMs MWS5101 A 3 -A 2 -A -A O -A S -A 6 -A 7 -vss— DI 1 — 001 — 012 — 1 2 3 4 5 6 7 I 6 9 10 II ^ 22 21 20 19 18 17 16 15 14 13 12 — V DD — A4 — R/W — £5T — 0.0. — CS2 — 004 — 014 — 003 — 013

EM6420

Contextual Info: EM MICROELECTRONIC - MARIN SA EM6420 Ultra Low Power Capacitive Touch Sensor Interface IC Description Availability The EM6420 is an ultra low power Touch Sensor Interface IC able to scan sequentially up to 16 capacitive sensors. The device parameters number of used sensors, sensors

IEC104

Abstract: REC580 CP56Time2a REF542 RER581 IEC61850 Full project report on object counter AXP 193 Eberle Relays microscada abb
Contextual Info: CAP581 Configuration Tool for COM581 p Operating Instructions 1MRB520184-Uen Edition July 2005 2000 ABB Switzerland Ltd Baden/Switzerland 4th Edition Applies for software version V6.0 We reserve all rights with respect to this document and the software it

MWS5101AEL3

Abstract: MWS5101 MWS5101A MWS5101ADL3 MWS5101AEL2 MWS5101AEL3X MWS5101DL3X MWS5101EL2 MWS5101ELS
Contextual Info: MWS5101, MWS5101A TM 256-Word x 4-Bit LSI Static RAM March 1997 Features PDIP, SBDIP TOP VIEW • Industry Standard Pinout A3 1 22 VDD A2 2 21 A4 A1 3 20 R/W A0 4 19 CSI • Memory Retention for Standby. . . . . . . . . . . . . 2V (Min) Battery Voltage A5

CDP1822

Abstract: MWS5101 MWS5101A MWS5101ADL3 MWS5101AEL2 MWS5101AEL3 MWS5101AEL3X MWS5101DL3X MWS5101EL2 MWS5101ELS
Contextual Info: MWS5101, MWS5101A S E M I C O N D U C T O R 256-Word x 4-Bit LSI Static RAM March 1997 Features Description • Industry Standard Pinout The MWS5101 and MWS5101A are 256 word by 4-bit static random access memories designed for use in memory systems where high speed, very low operating current, and

2N5302 EB

Abstract: 2N1463 2n4271
Contextual Info: GENERAL TRANSISTOR CORP 24E D • 3^SaD01 D O D O D ^ fi ■ General Transistor Corporation CASE TO-3,TO-39 lc MAX = 3-50A Vceo(sus) s40-100V 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 (213) 673-8422 • Telex 65-3474 * FAX (213) 672-2905 T - 3 3

Contextual Info: q £ SOLID STATE □ ! l> ij 3 a? S 0 fl l □ □ l b b l ' l 1 Random-Access Memories RAMs _ - CDP1822, CDP1822C A3 — 1 A2 — 2 A 1— i 3 A O - 1 4 A5 — 5 A6 — 6 A7 — 7 v ss —

em6420

Abstract: EM6819 sensor map IC 4096 EM-64201 EM MICROELECTRONIC-MARIN EM6819 Capacitive touch waterproof ir touch screen TOUCH SCREEN MCU 110B
Contextual Info: EM MICROELECTRONIC - MARIN SA EM6420 Ultra Low Power Capacitive Touch Sensor Interface IC Description Availability Naked die The EM6420 is an ultra low power Touch Sensor Interface IC able to scan sequentially up to 16 capacitive sensors. The device parameters number of used sensors, sensors

Contextual Info: hennis S CDP1822, CDP1822C S em icon du cto r y 256-Word x 4-Bit LSI Static RAM March 1997 Features Description • Low Operating Current The CDP1822 and CDP1822C are 256-word by 4-bit static random-access memories designed for use in memory sys­ tems where high speed, low operating current, and simplicity

Contextual Info: Random-Access Memories RAMs MWS5101A A 3 - ~ -— - A2 A I AO A 5 A 6 i W 2Ï 2 3 4 5 6 — v DD 2 I — A<L 2 0 — R£W 19 — csi 18 — O D 17 CS2 I6 D 04 5 D I4 I4 D03 13 — D I 3 12 — 00 2 A 7 - 7 8 9 D O I - IO D I 2 - I I

cdp1822

Abstract: CDP1822CD CDP1822C CDP1822CDX CDP1822CE CDP1822CEX CDP1822D CDP1822E CDP1822EX cd18
Contextual Info: CDP1822, CDP1822C TM 256-Word x 4-Bit LSI Static RAM March 1997 Features Description • Low Operating Current - VDD = 5V, Cycle Time 1µs . . . . . . . . . . . . . . . . . . 8mA The CDP1822 and CDP1822C are 256-word by 4-bit static random-access memories designed for use in memory systems where high speed, low operating current, and simplicity

snubber circuts

Abstract: EL2008CT RC snubber ac motor DC MOTOR DRIVE ac volteg w s p 1620 transformer EL2008 EL2008C EL2009 M2008 00043E
Contextual Info: 'a n n é e EL2008C 55 MHz 1 A mp Buffer ,4 mplifier U oo <N 00 CRWANCEANALOGINTEGRATEDCIBCU.TS J H Features • H igh slew rate— 2500 V/ju.s • Wide bandwidth— 100 M Hz @ RL = 50fi 55 M H z @ RL = 10il • Output current— 1A continuous • Output impedance— l i l