TCS -418 M1 Search Results

I1244

Abstract: D42S18165 LH 446
Contextual Info: DATA SHEET NEC / / MOS INTEGRATED CIRCUIT /¿P D 4 2 S1 8 1 6 5L, 4 2 1 8 1 6 5 L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, HYPER PAGE MODE EDO , BYTE READ/WRITE MODE Description The ¿¿PD42S18165L, 4218165L are 1,048,576 words by 16 bits CMOS dynamic RAMs with optional hyper page

la 47515

Abstract: BT158 hz 8217 its 30546 LS 4704 EM65101 EM65101AGH EM65101AH 160-Segment BOOSTER REGULATOR SERIES VBA
Contextual Info: EM65101 128COM / 160SEG 16 Gray Scale Level LCD Driver Product Specification DOC. VERSION 1.4 ELAN MICROELECTRONICS CORP. April 2008 Trademark Acknowledgments: IBM is a registered trademark and PS/2 is a trademark of IBM. Windows is a trademark of Microsoft Corporation.

rm1 3404

Abstract: BTS 2954 BTS 4321 LS 4704 EM65101 EM65101AF EM65101AGH EM65101AH EM65101AT BOOSTER REGULATOR SERIES VBA
Contextual Info: EM65101 128COM/160SEG 16 Gray Scale Level LCD Driver Product Specification DOC. VERSION 0.4 ELAN MICROELECTRONICS CORP. August 2005 Trademark Acknowledgments: IBM is a registered trademark and PS/2 is a trademark of IBM. Windows is a trademark of Microsoft Corporation.

PD48288236

Contextual Info: Datasheet PD48288209A μPD48288218A μPD48288236A R10DS0097EJ0200 Rev.2.00 May 10, 2012 288M-BIT Low Latency DRAM Common I/O Description The μPD48288209A is a 33,554,432-word by 9 bit, the μPD48288218A is a 16,777,216-word by 18 bit and the μPD48288236A is a 8,388,608-word by 36 bit synchronous double data rate Low Latency RAM fabricated with

Contextual Info: H Preliminary Advanced Micro Devices Am79C02/A Dual Subscriber Line Audio-Processing Circuit DSLAC DISTINCTIVE CHARACTERISTICS Software program mable: -SLIC impedance -Trans-hybrid balance -Transmit and Receive gains -Equalization -Digital I/O pins -Tim e Slot Assigner

MICRON BGA PART MARKING

Abstract: 195u MT49H16M36
Contextual Info: 576Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II Features CIO RLDRAM II MT49H64M9 – 64 Meg x 9 x 8 Banks MT49H32M18 – 32 Meg x 18 x 8 Banks MT49H16M36 – 16 Meg x 36 x 8 Banks Features Figure 1: • 533 MHz DDR operation 1.067 Gb/s/pin data rate

MICRON BGA PART MARKING

Abstract: RLDRAM 09005aef809f284b MT49H16M36
Contextual Info: 576Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II Features CIO RLDRAM II MT49H64M9 – 64 Meg x 9 x 8 Banks MT49H32M18 – 32 Meg x 18 x 8 Banks MT49H16M36 – 16 Meg x 36 x 8 Banks Features Figure 1: • 533 MHz DDR operation 1.067 Gb/s/pin data rate

MT49H16M36

Contextual Info: 576Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II Features CIO RLDRAM II MT49H64M9 – 64 Meg x 9 x 8 Banks MT49H32M18 – 32 Meg x 18 x 8 Banks MT49H16M36 – 16 Meg x 36 x 8 Banks Features Figure 1: • 533 MHz DDR operation 1.067 Gb/s/pin data rate

MT49H16M18

Contextual Info: 288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II Features CIO RLDRAM II MT49H32M9 – 32 Meg x 9 x 8 Banks MT49H16M18 – 16 Meg x 18 x 8 Banks MT49H8M36 – 8 Meg x 36 x 8 Banks Features Figure 1: • 400 MHz DDR operation 800 Mb/s/pin data rate

MICRON BGA PART MARKING

Abstract: MT49H16M36
Contextual Info: 576Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II Features CIO RLDRAM II MT49H64M9 – 64 Meg x 9 x 8 Banks MT49H32M18 – 32 Meg x 18 x 8 Banks MT49H16M36 – 16 Meg x 36 x 8 Banks Features Options1 • 533 MHz DDR operation 1.067 Gb/s/pin data rate

a3568

Abstract: S-80141ALMC aplication notes w25q32b quanta 6320 XL710 26 Pin GPIO Connector Header Extender 90 Degree Angle TXAL 228 B
Contextual Info: Intel Ethernet Controller XL710 Datasheet Networking Division ND Revision: 2.1 December 2014 Legal Lines and Disclaimers No license (express or implied, by estoppel or otherwise) to any intellectual property rights is granted by this document. Intel disclaims all express and implied warranties, including without limitation, the implied warranties of merchantability, fitness for a

MICRON BGA PART MARKING

Contextual Info: 288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM 2 Features CIO RLDRAM 2 MT49H32M9 – 32 Meg x 9 x 8 Banks MT49H16M18 – 16 Meg x 18 x 8 Banks MT49H8M36 – 8 Meg x 36 x 8 Banks Features Options1 • 533 MHz DDR operation 1.067 Gb/s/pin data rate

MICRON BGA PART MARKING

Abstract: NF 034 T6N 700 MT49H16M18
Contextual Info: 288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II Features CIO RLDRAM II MT49H32M9 – 32 Meg x 9 x 8 Banks MT49H16M18 – 16 Meg x 18 x 8 Banks MT49H8M36 – 8 Meg x 36 x 8 Banks Features Options1 • 533 MHz DDR operation 1.067 Gb/s/pin data rate

smd code marking x18

Abstract: MT49H16M36
Contextual Info: 576Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM 2 Features CIO RLDRAM 2 MT49H64M9 – 64 Meg x 9 x 8 Banks MT49H32M18 – 32 Meg x 18 x 8 Banks MT49H16M36 – 16 Meg x 36 x 8 Banks Features Options1 • 533 MHz DDR operation 1.067 Gb/s/pin data rate

IS49NLC18160

Contextual Info: IS49NLC93200,IS49NLC18160,IS49NLC36800 288Mb x9, x18, x36 Common I/O RLDRAM 2 Memory ADVANCED INFORMATION JUNE 2012 FEATURES • • • • • • • • • • 533MHz DDR operation (1.067 Gb/s/pin data rate) 38.4Gb/s peak bandwidth (x36 at 533 MHz

IS49NLC96400

Contextual Info: IS49NLC96400,IS49NLC18320,IS49NLC36160 576Mb x9, x18, x36 Common I/O RLDRAM 2 Memory ADVANCED INFORMATION FEBRUARY 2012 FEATURES • • • • • • • • • 533MHz DDR operation (1.067 Gb/s/pin data rate) 38.4Gb/s peak bandwidth (x36 at 533 MHz

IS49NLC96400

Contextual Info: IS49NLC96400,IS49NLC18320,IS49NLC36160 576Mb x9, x18, x36 Common I/O RLDRAM 2 Memory ADVANCED INFORMATION JULY 2011 FEATURES •          533MHz DDR operation (1.067 Gb/s/pin data rate) 38.4Gb/s peak bandwidth (x36 at 533 MHz

IS49NLC18160

Contextual Info: IS49NLC93200,IS49NLC18160,IS49NLC36800 288Mb x9, x18, x36 Common I/O RLDRAM 2 Memory ADVANCED INFORMATION JULY 2012 FEATURES •          533MHz DDR operation (1.067 Gb/s/pin data rate) 38.4Gb/s peak bandwidth (x36 at 533 MHz

IS49NLC18160

Contextual Info: IS49NLC93200,IS49NLC18160,IS49NLC36800 288Mb x9, x18, x36 Common I/O RLDRAM 2 Memory ADVANCED INFORMATION JULY 2011 FEATURES •          533MHz DDR operation (1.067 Gb/s/pin data rate) 38.4Gb/s peak bandwidth (x36 at 533 MHz

IS49NLC18160

Contextual Info: IS49NLC93200,IS49NLC18160,IS49NLC36800 288Mb x9, x18, x36 Common I/O RLDRAM 2 Memory ADVANCED INFORMATION FEBRUARY 2012 FEATURES • • • • • • • • • • 533MHz DDR operation (1.067 Gb/s/pin data rate) 38.4Gb/s peak bandwidth (x36 at 533 MHz

IS49NLC36160-18BL

Abstract: FBGA144 IS49NLC96400
Contextual Info: IS49NLC96400,IS49NLC18320,IS49NLC36160 576Mb x9, x18, x36 Common I/O RLDRAM 2 Memory ADVANCED INFORMATION JULY 2012 FEATURES •         533MHz DDR operation (1.067 Gb/s/pin data rate) 38.4Gb/s peak bandwidth (x36 at 533 MHz

hspice MT49H16M36

Abstract: MT49H16M36FM MT49H16M36 MT49H32M18FM
Contextual Info: Advance‡ 576Mb: x36, x18, x9 2.5V VEXT, 1.8V VDD, HSTL, RLDRAM II Features 576Mb CIO Reduced Latency RLDRAM II MT49H16M36 MT49H32M18 MT49H64M9 For the latest data sheet, refer to Micron’s Web site: www.micron.com/rldram Features Figure 1: • 533 MHz DDR operation (1,067 Mb/s/pin data rate)

82599EN

Abstract: 82599EN errata
Contextual Info: Intel 82599 10 GbE Controller Datasheet Networking Division ND PRODUCT FEATURES General                                  Dual port 10 GbE device or Single Port device (82599EN)

82599EN

Contextual Info: Intel 82599 10 GbE Controller Datasheet Networking Division ND PRODUCT FEATURES General                                  Dual port 10 GbE device or Single Port device (82599EN)