TCA 4001 Search Results

RN10U

Contextual Info: P-TCA-E006 OUTLINE (Type TCA) Type TCA is a tantalum solid electrolytic capacitor which uses conductive polymer as cathode layer. Their equivalent series resistance (ESR) is extremely lowered with the characteristics of the polymer having high electric conductivity.

TCA 160c

Abstract: RCR-2368B m1 marking code marking code M1 marking A7 4001
Contextual Info: No. P-TCA-003 DATE 2008-10 PRODUCTS DATA SHEET Tantalum Solid Electrolytic Capacitors with Conductive Polymer RoHS COMPLIANT LEAD FREE Type TCA OUTLINE Type TCA is a tantalum solid electrolytic capacitor which uses conductive polymer as cathode layer. Their equivalent series resistance ESR is extremely lowered with the characteristics of the polymer having high electric conductivity.

RC-2378

Abstract: JIS I
Contextual Info: No. P-TCA-001 DATE 2006-12 PRODUCTS DATA SHEET Tantalum Solid Electrolytic Capacitors with Conductive Polymer RoHS COMPLIANT LEAD FREE Type TCA OUTLINE Type TCA is a tantalum solid electrolytic capacitor which uses conductive polymer as cathode layer. Their equivalent series resistance ESR is extremely lowered with the characteristics of the polymer having high electric conductivity.

Contextual Info: No. P-TCA-002 DATE 2007-11 PRODUCTS DATA SHEET Tantalum Solid Electrolytic Capacitors with Conductive Polymer RoHS COMPLIANT LEAD FREE Type TCA OUTLINE Type TCA is a tantalum solid electrolytic capacitor which uses conductive polymer as cathode layer. Their equivalent series resistance ESR is extremely lowered with the characteristics of the polymer having high electric conductivity.

tca 945

Abstract: 12A200S IR10 RCR-2368B MARKING CODE JN marking 2501 TCA 208
Contextual Info: OUTLINE Type TCA Type TCA is a tantalum solid electrolytic capacitor which uses conductive polymer as cathode layer. Their equivalent series resistance (ESR) is extremely lowered with the characteristics of the polymer having high electric conductivity.

4001

Abstract: 6032 tca 4001
Contextual Info: Part Number Change 251, TCA, TCB, ACA series Item Change 1 Change of case profile "Code" to "Height or 2digit number" plus "Code". Part Number Change New Case Code：＊ ＊ Ｓ Example （2 digits Height pluse Case Size TCA series with standard height never print 2 digit code.

7343L

Abstract: tca 4001
Contextual Info: OUTLINE Type TCA is a tantalum solid electrolytic capacitor which uses conductive polymer as cathode layer. Their equivalent series resistance ESR is extremely lowered with the characteristics of the polymer having high electric conductivity. This ensures higher permissible ripple current and excellent noise absorption performance on high-frequency circuits.

BB113

Abstract: receiver tca440 vogt l3 Coil Assembly Vogt D41-2519 vogt l7 BB113 diode VOGT x1 TCA440 diode aa118 vogt D21-2375.1
Contextual Info: i SIEM EN S TCA 440 AM Receiver Circuit AM receiver circuit for LW, MW, and SW in battery and line operated radio receivers. It includes an RF prestage with AGC, a balanced mixer, separate oscillator, and an IF amplifier with AGC. Because of its internal stabilization, all characteristics are largely independent of the

BB113

Abstract: BB113 diode tda 1432 TCA440 Coil Assembly Vogt D41-2519 receiver tca440 Siemens TCA440 diode aa118 vogt l7 vogt
Contextual Info: i S IE M E N S TCA 440 AM Receiver Circuit AM receiver circuit for LW, MW, and SW in battery and line operated radio receivers. It includes an RF prestage with AGC, a balanced mixer, separate oscillator, and an IF amplifier with AGC. Because of its internal stabilization, all characteristics are largely independent of the

tca 4001

Abstract: TCA 208 al 336 IR10 RCR-2368B TCA 150 t
Contextual Info: 概 要 ＴＣＡ型は陰極層に導電性高分子を使用したタンタル固体電解コンデンサです。 導電率が高い導電性高分子を採用したことにより、大幅に等価直列抵抗（ＥＳＲ）を低減しました。

tca 945

Abstract: tca 680 TCA 105 N TCA 208 IR10 RCR-2368B mr20d 15S200 tca 4001
Contextual Info: ＴＣＡ型 ＴＣＡ型は陰極層に導電性高分子を使用したタンタル固体電解コンデンサです。 導電率が高い導電性高分子を採用したことにより、大幅に等価直列抵抗（ＥＳＲ）を低減しました。

4001

Abstract: 251M
Contextual Info: 製品形名の変更点について ２５１型ＴＣＡ型、ＴＣＢ型、ＡＣＡ型 対象品種 変更点① “ケース記号”の製品高さを示す数値を２桁の構成に変更いたします。 【例】 ケース記号：＊ ＊ Ｓ

MH1SS1

Abstract: TESLA mh 7400 MH 7404 mh 7400 tesla cdb 838 tda 7851 L 741PC TDB0124DP tda 4100 TDA 7851 A
Contextual Info: m ö lk ^ o e le l-c te n a n il-c Information Applikation RGW Typenübersicht Vergleich Teil 2: RGW M iM U Z A U l KÉD lnrüÖC=SraO Information Applikation HEFT 50 RGW Typenübersicht + Vergleich Teil 2: RGW wob Halbleiterwerk Frankfurt /oder bt r iab im v«b kombinat mikrootektronik

k3882

Abstract: TAA 981 E25C5 TC8066PB sn 8400 sn 8408 selen-gleichrichter Halbleiterbauelemente DDR A109D SY 170
Contextual Info: [ n r D D lk D ^ i^ B lB k f a n a n ilK Halbleiter-Bauelemente Kurzinformation D ie M ik ro e le k tro n ik e rw e is t sich in te rn a tio n a l m e h r u n d m eh r a ls e in e n ts c h e id e n d e r F a k to r be i d e r D u rc h s e tz u n g d e s w isse n s c h a ftlic h -te c h n is c h e n F o rts c h ritte s a lle r B ere ich e d e r W irts c h a ft un d

itr 8102

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT jjPD42S17800L, 4217800L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE D e s c rip tio n The /iPD42S17800L, 4217800L are 2,097,152 words by 8 bits CMOS dynamic RAMs. The fast page mode capability realize high speed access and low power consumption.

Contextual Info: CMOS DRAM KM41C4001A 4 M X 1 Bit CMOS Dynamic RAM with Nibble Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M 41C 4001A is a CMOS high speed 4 ,1 9 4 ,3 0 4 bit X 1 Dynamic Random Access Memory, Its design is optimized for high performance applications

PLX9050

Abstract: C143 ESP C144 ESP xc95216pq160 plx vhdl code 3F6 smd a/transistor c114 esp 96F8740 smd code STPA 1410G6
Contextual Info: PM5351 S/UNI-155-TETRA RELEASED REFERENCE DESIGN PMC-1991709 ISSUE 1 S/UNI 155 TETRA WITH S/UNI ATLAS REFERENCE DESIGN PM5351 S/UNI-155 TETRA WITH S/UNI ATLAS REFERENCE DESIGN RELEASED ISSUE 1: SEPTEMBER 2001 PROPRIETARY AND CONFIDENTIAL TO PMC-SIERRA, INC., AND FOR ITS CUSTOMERS’ INTERNAL USE

MSD 7818

Abstract: MN9106 information applikation 7490 N TDA 5700 information applikation mikroelektronik udssr hefte 143KT1 Mikroelektronik Information Applikation K 176 LE, K 561 LN
Contextual Info: In n in ik ü r Q fâ lI Information Applikation RGW Typen­ übersicht + Vergleich TeiM UdSSR JitfÆÊL JUUUUUUL&JJJUL i m i n i ^ r ^ c z l c i c b p o n Information Applikation , 9 H E F T 4 9 * R G W T y p e n ü b e r s i c h t + V e r g l e i c h Teil 1

Contextual Info: MEMORY CMOS 1 M x 16 BIT HYPER PAGE MODE DYNAMIC RAM MB81V16165B-50/-60 CMOS 1,048,576 x 16 Bit Hyper Page Mode Dynamic RAM • DESCRIPTION The Fujitsu MB81V16165B is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216 memory cells accessible in 16-bit increments. The MB81V16165B features a “hyper page” mode of operation whereby

HBF4727A

Abstract: ZD 607 - triac ZD 607 - triac circuit hbf 4727a TDA3310 hbf4727 HBF4740 DTL-930 7-stage frequency divider BF479S
Contextual Info: / h o f t f o f m A T E ^SEMICONDUCTOR “ PRODUCTS 1979/80 I NT RODUCTI ON This publication aims to provide condensed information on the vast range of standard devices currently produced by SGS-ATES. For easy consultation the products have been divided into several sections according to the main product

Contextual Info: si KM41C4001A CMOS DRAM 4 M X 1 Bit CMOS Dynamic RAM with Nibble Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M 41C 4001A is a CMOS high speed 4 ,1 9 4 ,3 0 4 bit X 1 Dynamic Random Access Memory. Its design is optimized for high performance applications

LH64400

Abstract: m4006 sharp LH64400
Contextual Info: PRELIMINARY LH64400 / FEATURES • 1,048,576 x 4 bit organization • Access times: 80/100 ns MAX. • • C M O S 4M (1M x 4) Dynamic RA M PIN CONNECTIONS TO P VIEW 20-PIN DIP Cycle times: 140/160 ns (MIN.) Cycle time in high speed page mode: 50/55 ns (MIN.)

Contextual Info: MEMORY CMOS 1M x 16 BITS FAST PAGE MODE DYNAMIC RAM MB81V16160 A-60/60L/-70/70L CMOS 1,048,576 x 16 BITS Fast Page Mode Dynamic RAM • DESCRIPTION The Fujitsu MB81V16160A is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216 memory cells accessible in 16-bit increments. The MB81V16160A features a “fast page” mode of operation whereby

ultrasonic flowmeter circuit

Contextual Info: Always a good solution Overview of process instrumentation and measurement solutions Contents KROHNE trademarks used in this brochure: KROHNE AST CalSys CARGOMASTER Configure it EcoMATE KROHNE Care OPTIBATCH OPTIFLEX OPTIFLUX OPTIMASS OPTISONIC OPTISOUND OPTISWIRL