TCA 315 A Search Results

TCA315A

Abstract: TCA 325 A tca325 tca322 TCA325A tca315
Contextual Info: 47E » • SIEMENS 023Sb05 0034734 T « S I E G SIEMENS AKTIEN6ESELLSCHAF T ' 1 ^ 5 3 Comparators with Darlington Input TTL-Compatible TCA 312 TCA 315 Features Bipolar 1C • • • • • • • • 2 Very high input resistance Large control range High output current

TCA 325 A

Abstract: TCA315A TCA315 tca325a tca 315 TCA 315 a Tca325 TCA312A TCA312 TCA 325
Contextual Info: Comparators with Darlington Input TTL-Compatible TCA 312 TCA315 Features Bipolar 1C 2 • • • • • • • • Very high input resistance Large control range High output current Low output saturation voltage W ide tem perature range TCA 312 A; G NPN input

tca 335 A

Abstract: tca 765 TCA335A
Contextual Info: 47E ]> • fl23SbOS □□3L b4fl 5 ■ SIEG SIEMENS AKTIENGESELLSCHAF T -1 ^ - O lSingle Operational Amplifier with Darlington Input O TCA 332 TCA 335 Features • • • • • • • • • \ Bipolar 1C High input impedance Wide common-mode range Large supply-voltage range

Contextual Info: bOE D I fl235b05 QD5G42Ô 7b7 SIEMENS S IC K N S ISIEG A K 7 -iE N 6 e LLSC H AF Dual Power Operational Amplifier TCA 2465 Bipolar 1C Features • High output peak current of twice 2.5 A • Twice 2.0 A output peak current for TCA 2465 G • Large supply voltage range up to 42 V

TCA104Z

Abstract: TCL103K TCD153M TCD050D z5v cap TCA103K
Contextual Info: Ceramic Disc Capacitors - TCA/TCD/TCL/TCO Class III - Low Voltage Barrier Capacitors 12WVDC C a p. M fd T yp e Inches mm T o le ra n c e TC M ax. D a M ax. T h ic k n e s s 16 WVDC L ea d S p a ce Cap. M fd. a T o le ra n c e TC M ax Dia M a x. T h ic k n e s s

MB85R256s

Abstract: FPT-28P-M03 FPT-28P-M17 MB85R256 MB85R256PF MB85R256PFTN FUJITSU FRAM TCA 150
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13101-3E Memory FRAM CMOS 256 K 32 K x 8 Bit MB85R256 • DESCRIPTIONS The MB85R256 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13101-4E Memory FRAM CMOS 256 K 32 K x 8 Bit MB85R256 • DESCRIPTIONS The MB85R256 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile

MB85R256F

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00011-1v0-E Memory FRAM 256 K 32 K x 8 Bit MB85R256F • DESCRIPTIONS The MB85R256F is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the

MDIO clause 22

Abstract: MDIO clause 45 specification MDIO clause 45 tda series class d BBT3420
Contextual Info: BBT3420 Data Sheet September 14, 2005 FN7481.1 Quad 2.488-3.1875Gbps/Channel Transceiver 1 Features • Receive signal detect and 16 levels of transmission medium equalization • Four channels of transmitter and receiver with serial data transfer rates of 2.488-3.1875Gbps/channel with full rate

BOITIER MU86

Abstract: CG3-22-10F fast thyristor 200A 320F DT3100F DT3120F DT380F 800DT OT31 10MSA
Contextual Info: THYRISTORS RAPIDES A GACHETTE AMPLIFICATRICE "DAR LISTO R" . am plifying gate fast sw itching thyristors " DARLISTOR Valeurs limites Absolute max. ratings. V DWM TY PES 315 A eff rms 345 A eff (rms) / CG3-22- 2F CG3-22- 4F CG3-22- 6F CG3-22- 8F CG3-22-10F

Contextual Info: te s SLOTTED OPTICAL SWITCH DPTDELECTROHICS CNY29 J 11 PACKAGE DIMENSIONS SYMBOL r-°T M ILLIM ETER S M IN. t r 3 - i* > r L b’ SECTIO N X - X T IN C H E S MIN. 10.7 11.0 .422 .433 A, 3.0 3.2 .119 .125 3.0 3.2 .119 .125 .024 .030 a 2 b, D D, d2 e2

MB85R256FPF

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00011-2v0-E Memory FRAM 256 K 32 K x 8 Bit MB85R256F • DESCRIPTIONS The MB85R256F is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00011-6v0-E Memory FRAM 256 K 32 K x 8 Bit MB85R256F • DESCRIPTIONS The MB85R256F is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the

MH1SS1

Abstract: TESLA mh 7400 MH 7404 mh 7400 tesla cdb 838 tda 7851 L 741PC TDB0124DP tda 4100 TDA 7851 A
Contextual Info: m ö lk ^ o e le l-c te n a n il-c Information Applikation RGW Typenübersicht Vergleich Teil 2: RGW M iM U Z A U l KÉD lnrüÖC=SraO Information Applikation HEFT 50 RGW Typenübersicht + Vergleich Teil 2: RGW wob Halbleiterwerk Frankfurt /oder bt r iab im v«b kombinat mikrootektronik

push pull power amplifier

Abstract: DW016 53K10 07AB str w 6252 0431 10K 16-PIN STR 6262 upd 2816 PIC 1607 lpc 2148 electrical specification
Contextual Info: MSP50x3x Mixed-Signal Processor User’s Guide SPSU006A MAY 1997 Printed on Recycled Paper IMPORTANT NOTICE Texas Instruments TI reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to obtain the latest

YS18A

Abstract: MSC2305-10YS18A MSC2305
Contextual Info: OKI semiconductor MSC2305YS18A_ 524,288 BY 9 BIT DYNAMIC RAM MODULE < Page Mode Type > GENERAL DESCRIPTION The Oki MSC2305YS18A is a fully decoded, 524,288 words x 9 bit NMOS dynamic random access memory composed of eighteen 256K DRAMs in plastic leaded chip carrier MSM41256AJS .

TDA 11136

Abstract: 103AT 30-PIN bq20z90 bq20z90DBT bq20z90DBTR BQ20Z90DBT-V110 bq20z90-V110 bq29330 SLUA364
Contextual Info: bq20z90-V110 www.ti.com SLUS743 – NOVEMBER 2006 SBS 1.1-COMPLIANT GAS GAUGE ENABLED WITH IMPEDANCE TRACK TECHNOLOGY FOR USE WITH THE bq29330 FEATURES • • • • • • • • • • • • • • Patented Impedance Track™ Technology Accurately Measures Available Charge in

555 timer

Abstract: 555 timer 38 khz HMCS43 ARM13 tca 311 555 timer datasheet HMCS400 555 TIMER APPLICATIONS ADE-502-063 09 67 025 9062
Contextual Info: HMCS400 Series Application Note ADE-502-063 Alternate Order Number Marcom Rev. 1.0 9/16/98 Hitachi Ltd. Notice When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the

Contextual Info: P ^ E U iÄ M 8 Y ir r t e T 51C258Lt LOW POWER 64K x 4 CHMOS DYNAMIC RAM Maximum Access Time ns Maximum CHMOS Standby Currant (mA) 51C258L-12 120 0.1 • Low Power Data Retention - Standby current, CHMOS — 100 pA (max.) - Refresh period, RAS-Only — 32 ms

Contextual Info: MEMORY MODULES KMM59256AN Units: Inches millimeters 0.550 ( 16.5 1 ) PACKAGE DIMENSIONS o 2G0 (5.08) TOLERANCES: ±0.0 0 5 (0.13) UNLESS OTHERWISE SPECIFIED 0.054 (1.37) 0.047 (1.19) eg SAM SUNG Electronics 312 MEMORY MODULES KMM59256AN 256K X 9 DRAM SIMM Memory Module

Contextual Info: PEELM M kUY 51C258LT LOW POWER 64Kx4 CHMOS DYNAMIC RAM ¡ n te T 51C258L-12 120 0.1 Maximum Access Time ns Maximum CHMOS Standby Current (mA) 51C258L-15 150 0.1 51C258L-20 200 0.1 • Low Operating Current — 50 mA (max.) ■ Low Power Data Retention - Standby current, CHMOS — 100 /iA

AX. A431

Abstract: AZ60
Contextual Info: 1 0 4 8 ,5 7 6 W O R D X * This is advanced information and specifica­ tions are subject to change without notice. 4 BIT D Y N A M IC R A M DESCRIPTION The TC514402AP/AJ/ASJ/AZ is the new generation dynamic RAM organized 1,048,576 words by 4 bits. The TC514402AP/AJ/ASJ/AZ utilizes TOSHIBA’S CMOS Silicon gate process technology as well as

i2 200-5

Contextual Info: bq20z80-V102 www.ti.com SLUS681A – NOVEMBER 2005 – REVISED MARCH 2006 SBS 1.1-COMPLIANT GAS GAUGE ENABLED WITH IMPEDANCE TRACK TECHNOLOGY FOR USE WITH THE bq29312A FEATURES • • • • • • • • • • • • • Patented Impedance Track™ Technology

IC TDA 11136

Abstract: TDA 11136 pms 01c bq29312PW 6336 tube 65535 bq20z80 bq29312 bq29312A bq20z80DBTR-V102
Contextual Info: bq20z80-V102 www.ti.com SLUS681A – NOVEMBER 2005 – REVISED MARCH 2006 SBS 1.1-COMPLIANT GAS GAUGE ENABLED WITH IMPEDANCE TRACK TECHNOLOGY FOR USE WITH THE bq29312A FEATURES • • • • • • • • • • • • • Patented Impedance Track™ Technology