TCA 205 N Search Results

TCA 205 N

Abstract: TCA 200 y
Contextual Info: M7E D ÔE3SbOS 003S372 b • SIEG SIEMENS AKTIENGESELLSCHAF TCA 205 Proximity Switch Bipolar 1C Features • • • • • • Large supply voltage range High output current Antivalent outputs Adjustable switching distance Adjustable hysteresis Turn-on delay

TCA 200 y

Abstract: Window Discriminator "7 Segment Displays" TCA205 TCA965K 7 Segment Displays TCA671G
Contextual Info: Window discriminators Type TCA 965 K V Hi V ^10 V jxA Package outlines Pin configu­ Type ration, figure 15 3,0 6,0 10 9 Characteristics 7^mb = 25°C, Vs - 1 0 V Operating range V ^amb °c b mA Mo V h nA 4 , 7 5 . . 27 - 2 5 . 85 50 ±10 20 MICROPACK

Contextual Info: bOE D • SIEMENS fl235bDS 0GSD727 S73 « S I E G SIEMENS AKTIENGESELLSCHAF T ' é S - O á TCA 305 TCA 355 Proximity Switch Bipolar 1C Features • Lower open-loop current consumption; Is < 1 mA • Lower output saturation voltage • The temperature dependence of the switching

NF 841 switching diode

Abstract: DIODE NF-841 TCA355B
Contextual Info: SIEMENS TCA 305 TCA 355 Proximity Switch Bipolar 1C Features • Lower open-loop current consumption; Is < 1 mA • Lower output saturation voltage • The temperature dependence of the switching distance is lower and compensation of the resonant circuit TC temperature coefficient is easier

Contextual Info: REVISION A DESIGNED & DIMENSIONED IN MILLIMETERS[INCHES] MTCA-XXX-XX-X-DV No OF POSITIONS -085 PER ROW DO NOT SC A LE FRO M THIS PRINT LEAD STYLE -02: 1.6 [.063] TH IC K C A R D P L A TIN G -S (SELEC TIVE ,00076[.000030] GOLD

a7y transistor

Abstract: RASH UD61466 A7X k
Contextual Info: Maintenance only UD61466 64K x 4 DRAM Features F Dynamic random access memory F F F F F F F F F F F 65536 x 4 bits manufactured using a CMOS technology RAS access times 70 ns/80 ns TTL-compatible Three-state outputs bidirectional 256 refresh cycles 4 ms refresh cycle time

k3882

Abstract: TAA 981 E25C5 TC8066PB sn 8400 sn 8408 selen-gleichrichter Halbleiterbauelemente DDR A109D SY 170
Contextual Info: [ n r D D lk D ^ i^ B lB k f a n a n ilK Halbleiter-Bauelemente Kurzinformation D ie M ik ro e le k tro n ik e rw e is t sich in te rn a tio n a l m e h r u n d m eh r a ls e in e n ts c h e id e n d e r F a k to r be i d e r D u rc h s e tz u n g d e s w isse n s c h a ftlic h -te c h n is c h e n F o rts c h ritte s a lle r B ere ich e d e r W irts c h a ft un d

Contextual Info: •HYUNDAI HY524800 Series SEMICONDUCTOR 512KX 8-blt CMOS DRAM DESCRIPTION The HY524800 is the new generation and fast dynamic RAM organized 524,288 x 8-bits. The HY524800 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating

Contextual Info: Proximity Switch Type 0TCA3O5A 0TCA3O5G T C A 305 K 0 TCA 355 B 0TCA355G TCA 305 TCA 355 Ordering Code Package Q67000-A2291 Q67000-A2305 Q67000-A2293 Q67000-A2443 Q67000-A2444 P-DIP-14 P-DSO-14 SMD MIKROPACK, 10 pins (SMD) P-DIP-8 similar to S O -8 (SMD)

carbon microphone

Abstract: TCA980 "carbon microphone" Scans-0010593
Contextual Info: S ig n e tic s Integrated Circuits - General TCA980 — Microphone Amplifier G E N E R A L D E S C R IP T IO N T h e T C A 9 8 0 is a m onolithic integrated m icrophone amplifier. t is prim arily intended for use with low im ped­ ance m icrophones in telephone systems.

Contextual Info: @ LG Semicon. Co. LTD. Description Features The GM 71 V S 1 6 4 0 0 B /B L is the new generation dynamic RAM organized 4,194,304 words x 4 Bit. GM71 V (S )16400B /B L has realized higher density, higher performance and various functions by utilizing advanced CMOS

GM71V18160AT8

Abstract: C12N GM71V18160AJ-8
Contextual Info: @ LG Semicon. Co. LTD. Description Features The GM71V18160A is the new generation dynamic RAM organized 1,048,576 words x 16 bits. GM71V18160A has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology.

UD61464DC

Abstract: 65536X4 RASH UD61464 RW100-50 A7X k
Contextual Info: Maintenance only UD61464 64K x 4 DRAM Features FPM facilitates faster data operation with predefined row address. Via 8 Dynamic random access memory address inputs the 16 address bits are transmitted into the internal 65536 x 4 bits manufactured address memories in a time-multiusing a CMOS technology

CRC10

Abstract: PM7324 PM7280
Contextual Info: PM7324 S/UNI-ATLAS PRELIMINARY ERRATA PMC-981505 ISSUE 2 S/UNI-ATLAS DATASHEET ERRATA PM7324 S/UNI_ATLAS DATA SHEET ERRATA PRELIMINARY ISSUE 2 : APR 1999 PM7324 S/UNI-ATLAS PRELIMINARY ERRATA PMC-981505 ISSUE 2 S/UNI-ATLAS DATASHEET ERRATA PUBLIC REVISION HISTORY

Contextual Info: @ LG Semicon. Co. LTD. Description Features The GM71V16160A is the new generation dynamic RAM organized 1,048,576 words x 16 bits. GM71V16160A has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology.

PEB 4165 T

Abstract: 4166 ic equivalent SPT170 PEB31664 PEB31666 PEB4164 P-MQFP-64-1 PEB 4166 T
Contextual Info: Pr eli mi nar y Dat a Sh eet , DS1 , No v. 20 00 MuPP µC Multichannel Processor for POTS PEB 31666 Version 1.3 PEB 31664 Version 1.3 W ir e d C o m m u n i c a t io n N e v e r s t o p t h i n k i n g . Edition 2000-11-06 Published by Infineon Technologies AG,

Contextual Info: S IE M E N S SAB 80C482, SAB 80C382 Telephone Controller Single-Chip 8-Bit CMOS Microcontroller • 2K X 8 ROM • Very Low Power Consumption • 64 X 8 RAM • Normal: 1.0 mA @ 5V @ 8 ju.s Cycle • 31 I/O Lines • Halt: 0.4 mA @ 5V @ 8 jus Cycle • 2.66 jus Cycle Time

a210k

Abstract: Mikroelektronik Heft "Mikroelektronik" Heft information applikation mikroelektronik mikroelektronik Heft 12 A211D A209K VEB mikroelektronik mikroelektronik DDR IC A211D
Contextual Info: INFORMATION APPLIKATIO N MIKROELEKTRONIK In fo r m a tio n - Applikation Die monolithisch integrierten N F-V erstärker A 210D A210K A211D Eigenschaften und ! Anwendung Mikroelektronik Heft 1 veb haîbîeîterwerk frankfurt/oder l e i t b e t r i e b im v e b k o m b i n a t m ik r o e le k t r o n ik

10 16s capacitor smd

Abstract: 226 smd capacitor RSM 2322 2222 632 series capacitor MOV 103 M 3 KV 336 smd CAPACITOR 2312 344 7 SMD resistor 474 2222 631 series capacitor SMD electrolytic capacitor
Contextual Info: Information New products and highlights i Ceramic capacitors Information Page Multilayer ceramic capacitors, NP0 10 V - 4000 V Multilayer ceramic capacitors, X7R 10 V - 2000 V Multilayer ceramic capacitors, Y5V 10 V - 250 V General purpose, high voltage capacitors 1000 V to 3000 V X7R and Y5V

Contextual Info: TOSHIBA TC5118320BJ/BFF60/70 PRELIMINARY 524,288 WORD X 32 BIT DYNAMIC RAM Description TheT C 5118320B J/B FT is the new generation dynamic RAM organized 524,288 w ords by 18 bits. T heT C 5118320B J/B FT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating

L70b

Abstract: 7010K HYM5C9256
Contextual Info: H Y UN DA I E L E C T R O N I C S • SIE » j:y u h d a i SEMICONDUCTOR • Mb7SGÖfi DOODflil T37 M H Y N K HYM5C9256 256KX9-Bit CMOS DRAM MODULE M 4212 0 2 B -O C T 9 1 DESCRIPTION The HYM5C9256M is a 256K words by 9 bits dynamic RAM module and consists of nine

71c464

Contextual Info: PRODUCTSPECIFICATION GM71C464 65,536WORDS x 4 BIT CMOS DYNAMIC RAM Description The GM 71C464 is a high speed dynamic RAM or­ ganized 65,536 x 4 Bit. The GM71C464 utilizes Goldstar's silicon Gate process technology as well as advanced circuit techniques to provide wide operat­

Contextual Info: MEMORY MODULES KMM59256AN Units: Inches millimeters 0.550 ( 16.5 1 ) PACKAGE DIMENSIONS o 2G0 (5.08) TOLERANCES: ±0.0 0 5 (0.13) UNLESS OTHERWISE SPECIFIED 0.054 (1.37) 0.047 (1.19) eg SAM SUNG Electronics 312 MEMORY MODULES KMM59256AN 256K X 9 DRAM SIMM Memory Module

tld 82c

Abstract: lm317to220abh POL-100UF 74HCT245 HFBR5207 HFBR-5207 LM317 PM5355 VSC8110 1H-10
Contextual Info: PMC-Sierra, Inc. REFERENCE DESIGN ISSUE 3 PM5355 S/UNI-622 SATURN USER NETWORK INTERFACE PM5355 S/UNITM 622 S/UNI-622 ATM Reference Design with Multimode Optics Preliminary Information Issue 3: October 11, 1996 PMC-Sierra, Inc. 105-8555 Baxter Place Burnaby, BC Canada V5A 4V7 604 415 6000