SB1H100
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SUNMATE electronic Co., LTD
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Schottky barrier rectifier diode in DO-41 package with 1.0 A average forward current, 50 A surge current, 90-100 V reverse voltage, and low forward voltage drop, suited for high-frequency and low-voltage applications. |
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AK01H10
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AK Semiconductor
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AK01H10 N-Channel Enhancement Mode Power MOSFET with 100V drain-source voltage, 100A continuous drain current, and 13mΩ maximum RDS(ON) at 10V VGS, featuring high ESD capability and optimized for power switching applications. |
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SS1H10
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SUNMATE electronic Co., LTD
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Surface mount Schottky rectifier diodes SS1H9 and SS1H10 in SMA package, with 90V to 100V reverse voltage, 1.0A average forward current, low forward voltage drop, high surge capability, and operating temperature up to 175°C. |
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AK01H10D
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AK Semiconductor
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N-Channel Enhancement Mode Power MOSFET with 100V drain-source voltage, 100A continuous drain current, and 9.9mΩ typical RDS(ON) at 10V VGS, featuring high ESD capability and low gate charge in a TO-263-2L package. |
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NCE01H10
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NCEPOWER
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NCE01H10 is an N-channel enhancement mode power MOSFET with 100V drain-source voltage, 100A continuous drain current, and ultralow RDS(ON) of 9.9mΩ typical at VGS=10V, designed for high-efficiency power switching applications. |
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NCE01H10D
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NCEPOWER
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NCE01H10D is a channel enhancement mode power MOSFET with 100V drain-source voltage, 100A continuous drain current, and low on-state resistance of 9.9mΩ typical at VGS=10V, featuring advanced trench technology for high efficiency in power switching applications. |
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SB1H100
