TC7SH02F Search Results

Contextual Info: TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT TC7SH02F/FU 2-Input NOR Gate The TC7SH02 is an advanced high speed CMOS 2-Input NOR Gate fab­ ricated with silicon gate CMOS technology. It achieves the high speed operation similar to equivalent Bipolar SchottkyTTL while maintaining the

7W14F

Abstract: 7W14 7w04f 7W00F 4w53f 7wu04 7w74f 7w08f 4W53 7w125
Contextual Info: il] Product, Function and Identify mark Table MODEL TC4S01F TC4S11F TC4SU11F TC4S30F TC4S66F TC4S69F TC4SU69F TC4S71F TC4S81F TC4S584F TC7S00F/FU TC7S02F/FU TC7S04F/FU TC7SU04F/FU TC7S08F/FU TC7S14F/FU TC7S32F/FU TC7S66F/FU TC7S86F/FU TC7SH00F/FU TC7SH02F/FU

TC7SH02FS

Contextual Info: TC7SH02FS TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SH02FS 2-Input NOR Gate Features • High speed operation : tpd = 3.6ns typ. at VCC = 5V, 15pF • Low power dissipation : ICC = 2 A (max) at Ta = 25°C • High noise immunity •

TC7SH02FE

Contextual Info: TC7SH02FE TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SH02FE 2 Input NOR Gate Features • Super high speed operation : tPD = 3.6 ns typ. @VCC = 5 V • Low power dissipation : ICC = 2 µA (Max.) @ Ta = 25°C • High noise immunity : VNIH = VNIH

Contextual Info: Reliability Tests Report Product Name: TC7SH02FE Package Name: ESV 1. Thermal tests Test Item Heat resistance Reflow Heat resistance (Iron) Temperature cycling - Test Condition Peak : 260 deg.C(a moment) Reflow zone : 230 deg.C 30 to 50 s Preheat : 180 to 190 deg.C , 60 to 120 s

TC7SH02

Abstract: TC7SH02F TC7SH02FU
Contextual Info: TO SH IBA TC7SH02F/FU TO SHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC7SH02F, TC7SH02FU 2-INPUT NOR GATE The TC7SH02 is an advanced high speed CMOS 2-INPUT NOR GATE fabricated w ith silicon gate C2MOS technology. It achieves the high speed operation similar

Contextual Info: TC7SH02FS TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SH02FS 2-Input NOR Gate Features • High speed operation • : tpd = 3.6ns typ. at VCC = 5V, 15pF • Low power dissipation : ICC = 2 A (max) at Ta = 25°C High noise immunity : VNIH = VNIL =28% VCC (min)

toshiba logic

Abstract: TC7SH02FS
Contextual Info: TC7SH02FS TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SH02FS 2-INPUT NOR GATE Features High speed: tpd = 3.6 ns typ. at VCC = 5 V Low power dissipation: ICC = 2 µA (max) at Ta = 25°C High noise immunity: VNIH = VNIL = 28% VCC (min) 5.5V tolerant input.

TC7SH02F

Abstract: TC7SH02FU
Contextual Info: TC7SH02F/FU TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SH02F, TC7SH02FU 2-Input NOR Gate Features TC7SH02F • High Speed Operation • Low Power Dissipation : ICC = 2 A max at Ta = 25°C • Balanced Propagation Delays : tpLH ≒ tpHL

TC7SH02FU

Abstract: TC7SH02F TC7SH02
Contextual Info: TC7SH02F/FU 東芝CMOSデジタル集積回路 シリコン モノリシック TC7SH02F, TC7SH02FU 2-Input NOR Gate 特 • 長 TC7SH02F 高速動作 : tpd = 3.6 ns 標準 @ VCC = 5 V, 15 pF • 低消費電流 : ICC =2 A (最大) @ Ta=25℃ • • バランスのとれた遅延時間 : tpLH ≒ tpHL

Contextual Info: Reliability Tests Report Product Name: TC7SH02F Package Name: SMV 1. Thermal tests Test Item Heat resistance Reflow Heat resistance (Flow) Heat resistance (Iron) Temperature cycling Test Condition Peak : 260 deg.C(a moment) Reflow zone : 230 deg.C 30 to 50 s

TC7SH02FE

Contextual Info: TC7SH02FE TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SH02FE 2 Input NOR Gate Features • Super high speed operation : tPD = 3.6 ns typ. @VCC = 5 V • Low power dissipation : ICC = 2 µA (Max.) @ Ta = 25°C • High noise immunity : VNIH = VNIH

Contextual Info: TC7SH02F/FU TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SH02F, TC7SH02FU 2-Input NOR Gate Features TC7SH02F • High Speed Operation • Low Power Dissipation : ICC = 2 A max at Ta = 25°C • Balanced Propagation Delays : tpLH ≒ tpHL

TC7SH02FS

Contextual Info: TC7SH02FS 東芝CMOSデジタル集積回路 シリコン モノリシック TC7SH02FS 2-Input NOR Gate 特 • 長 高速動作 : tpd = 3.6ns 標準 @ VCC = 5V, 15pF : ICC = 2 A (最大) @ Ta = 25℃ • 低消費電流 • 高雑音余裕度 • 入力端子に､ 5.5 V トレラント機能あり

Contextual Info: SILICON M O N OLITHIC TO SH IBA C M O S DIGITAL INTEGRATED CIRCUIT TC7SH02F/FU 2-INPUT NOR GATE T h e T C 7 S H 0 2 is a n ad va n ce d h ig h speed C M O S 2-IN P U T N O R G A T E fab ricated w ith silicon g a te C 2M O S te c h n o lo g y . It achieves th e h ig h sp e e d o p e ra tio n sim ilar

TC7SH02FS

Contextual Info: TC7SH02FS TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SH02FS 2-INPUT NOR GATE Features High speed: tpd = 3.6 ns typ. at VCC = 5 V Low power dissipation: ICC = 2 µA (max) at Ta = 25°C High noise immunity: VNIH = VNIL = 28% VCC (min) 5.5V tolerant input.

TC7SH02FE

Contextual Info: TC7SH02FE 東芝CMOSデジタル集積回路 シリコン モノリシック TC7SH02FE 2-Input NOR Gate 特 • 長 : tpd = 3.6ns 標準 @ VCC = 5V, 15pF 高速動作 • 低消費電流 : ICC = 2 A (最大) @ Ta=25℃ • 高雑音余裕度 : VNIH = VNIL = 28% VCC (最小)

Contextual Info: TC7SH02FJC7SH02FU 2-INPUT NOR GATE T h e T C 7S H 02 is an a d v a n c e d h ig h sp eed C M O S 2-IN P U T N O R GATE fa b ric a te d w ith silicon g a te C2M O S te c h n o lo g y . It achieves th e h ig h sp eed o p e r a tio n sim ilar to e q u iv a le n t B ip o la r S ch o ttk y TTL w h ile m a in ta in in g th e

Contextual Info: Reliability Tests Report Product Name: TC7SH02FS Package Name: fSV 1. Thermal tests Test Item Heat resistance Reflow Heat resistance (Iron) Temperature cycling - Test Condition Peak : 260 deg.C(a moment) Reflow zone : 230 deg.C 30 to 50 s Preheat : 180 to 190 deg.C , 60 to 120 s

TC7SH02

Abstract: TC7SH02F TC7SH02FU
Contextual Info: TOSHIBA TC7SH02F/FU TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC7SH02F, TC7SH02FU 2-INPUT NOR GATE The TC7SH02 is an advanced high speed CMOS 2-INPUT NOR GATE fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar

Contextual Info: TOSHIBA TC7SH02F/FU TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC7SH02F, TC7SH02FU 2-INPU T NOR GATE The TC7SH02 is an advanced high speed CMOS 2-INPUT NOR GATE fabricated w ith silicon gate C2MOS technology. It achieves the high speed operation similar

Contextual Info: TC7SH02FE TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SH02FE 2-Input NOR Gate Features • • High speed operation : tpd = 3.6 ns typ. at VCC = 5V, 15pF Low power dissipation : ICC = 2 A (max) at Ta = 25°C • High noise immunity •

Contextual Info: TOSHIBA TC7SH02F/FU TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC T•T 7 < ;n T r 7 <v ;n ■ ■n ir 3F ■ ■n 3 F II m m g wèêf m m 2-INPUT NOR GATE The TC7SH02 is an advanced high speed CMOS 2-INPUT NOR GATE fabricated w ith silicon gate C2MOS

specifications of transistor AC126

Abstract: hc132a hc138a specifications of AC126 HC74A TC7PGU04FU transistor AC126 hc273a -toshiba toshiba vhc32 TC4W53FU
Contextual Info: SEMICONDUCTOR GENERAL CATALOG General-Purpose Logic ICs CMOS Logic ICs Low-Voltage CMOS Logic ICs CMOS Logic ICs in Ultra-Small US Packages Dual-Supply Level Shifters CMOS Bus Switch ICs Application-Specific Logic One-Gate CMOS L-MOS 1 2009-8 SCE0004I CMOS Logic ICs (74AC, 74VHC, 74HC and Standard Series) Quick Reference