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    TC58V64BFTI Search Results

    TC58V64BFTI Datasheets (2)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    TC58V64BFTI
    		Toshiba Memory, 0.3 Power Dissipation, Industrial Original PDF 290.52KB 33
    TC58V64BFTI(EL)
    		Toshiba Memory, 0.3 Power Dissipation, Industrial, Tape and Reel Original PDF 290.52KB 33
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    TC58V64BFTI Price and Stock

    Toshiba America Electronic Components

    Toshiba America Electronic Components TC58V64BFTI

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    Bristol Electronics TC58V64BFTI 8
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    TC58V64BFTI Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    TC58V64BFTI

    Abstract: TC58V64B
    Contextual Info: TC58V64BFTI TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 64-MBIT 8M x 8 BITS CMOS NAND E PROM DESCRIPTION The TC58V64B is a single 3.3 V 64-Mbit (69,206,016) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes × 16 pages × 1024 blocks. The device has a 528-byte


    Original     		TC58V64BFTI 64-MBIT TC58V64B 528-byte 528-byte TC58V64BFTI PDF