TC58NYG1S3HBAI4 Search Results
TC58NYG1S3HBAI4 Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| TC58NYG1S3HBAI4 | Toshiba Memory America | Integrated Circuits (ICs) - Memory - 2G NAND SLC 24NM BGA | Original | 719.12KB |
TC58NYG1S3HBAI4 Price and Stock
KIOXIA
KIOXIA TC58NYG1S3HBAI4IC FLASH 2GBIT PARALLEL 63TFBGA |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TC58NYG1S3HBAI4 | Tray |
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TC58NYG1S3HBAI4 | Tray | 14 Weeks | 210 |
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TC58NYG1S3HBAI4 | 40 |
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TC58NYG1S3HBAI4 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: TC58NYG1S3HBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 2 GBIT 256M 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYG1S3HBAI4 is a single 1.8V 2 Gbit (2,281,701,376 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 128) bytes 64 pages 2048blocks. |
Original |
TC58NYG1S3HBAI4 TC58NYG1S3HBAI4 2048blocks. 2176-byte 2013-01-18C |