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    TC58NYG1S3HBAI4 Search Results

    TC58NYG1S3HBAI4 Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    TC58NYG1S3HBAI4
    		Toshiba Memory America Integrated Circuits (ICs) - Memory - 2G NAND SLC 24NM BGA Original PDF 719.12KB
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    TC58NYG1S3HBAI4 Price and Stock

    KIOXIA

    KIOXIA TC58NYG1S3HBAI4

    IC FLASH 2GBIT PARALLEL 63TFBGA
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    DigiKey TC58NYG1S3HBAI4 Tray
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    Mouser Electronics TC58NYG1S3HBAI4 40
    • 1 $4.02
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    • 1000 $3.57
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    TC58NYG1S3HBAI4 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: TC58NYG1S3HBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 2 GBIT 256M  8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYG1S3HBAI4 is a single 1.8V 2 Gbit (2,281,701,376 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048  128) bytes  64 pages  2048blocks.


    Original     		TC58NYG1S3HBAI4 TC58NYG1S3HBAI4 2048blocks. 2176-byte 2013-01-18C PDF