TC55YK161SAYB Search Results

Contextual Info: TOSHIBA TC55YK1618AYB-800#-666#-500 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1,048,576-WORD BY 18-BIT SYNCHRONOUS DDR STATIC RAM DESCRIPTION The TC55YK1618AYB is a 18,874,368-bit synchronous static random access memory SRAM organized as 1,048,576 words by 18 bits. It is designed for use as a secondary cache in applications