TC55Y800XB Search Results

Contextual Info: TOSHIBA TC55Y800XB7,8 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 16-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55Y800XB is a 8,388,608-bit static random access memory SRAM organized as 524,288 words by 16 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this device operates from a single 1.65