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    TC55VCM216ASGN Search Results

    TC55VCM216ASGN Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    TC55VCM216ASGN40
    		Toshiba 262,144-Word BY 16-BIT FULL CMOS STATIC RAM Original PDF 142.58KB 14
    SF Impression Pixel

    TC55VCM216ASGN Price and Stock

    Toshiba America Electronic Components

    Toshiba America Electronic Components TC55VCM216ASGN-55

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    Bristol Electronics TC55VCM216ASGN-55 2,292
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    Toshiba America Electronic Components TC55VCM216ASGN55

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    Bristol Electronics TC55VCM216ASGN55 488
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    Quest Components () TC55VCM216ASGN55 1,833
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    TC55VCM216ASGN55 257
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    TC55VCM216ASGN55 220
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    TC55VCM216ASGN Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    TC55VCM216ASGN40

    Abstract: TC55VCM216 TC55VCM216asgn
    Contextual Info: TC55VCM216ASGN40,55 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS Lead-Free 262,144-WORD BY 16-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55VCM216ASGN is a 4,194,304-bit static random access memory SRAM organized as 262,144 words by 16 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 2.3 to


    Original     		TC55VCM216ASGN40 144-WORD 16-BIT TC55VCM216ASGN 304-bit TC55VCM216 PDF