TC55VCM208ASGN Search Results
TC55VCM208ASGN Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| TC55VCM208ASGN40 |
|
524,288-Word BY 8-BIT FULL CMOS STATIC RAM | Original | 119.49KB | 12 |
TC55VCM208ASGN Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
TC55VCM208ASGN40Contextual Info: TC55VCM208ASGN40,55 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS Lead-Free 524,288-WORD BY 8-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55VCM208ASGN is a 4,194,304-bit static random access memory SRAM organized as 524,288 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 2.3 to |
Original |
TC55VCM208ASGN40 288-WORD TC55VCM208ASGN 304-bit |