TC5561J Search Results

TOSHIBA J55

Contextual Info: TOSHIBA MOS MEMORY PRODUCTS TC5561P/J-45, TC5561P/J-55, TC5561P/J-70 [DESCRIPTION] The TC5561P/J is a 65,536 bit high speed static random access memory organized as 65,536 words by 1 bit using CMOS technology, and operated from a single 5-volt supply, Toshiba's high performance device technology provides both high speed and low power

TA053-059-38-36

Contextual Info: TA053-059-38-36 REV1_20040412 5.3 – 5.9 GHz 4 W Amplifiers FEATURES • P-1 dB: 36 dBm • Noise Figure: 4.5 dB • IP3: 44 dBm • Bias Condition: 2400 mA @ 12 V • Small Signal Gain: 38 dB DESCRIPTION The TA053-059-38-36 is a 4 W power amplifier designed for high linearity applications in the 5.3 to 5.9

Contextual Info: 65,536 WORD x 1 BIT CMOS STATIC RAM [DESCRIPTION] The TC5561P/J is a 6 5 ,5 3 6 b it high, speed, sta tic random a ccess m em ory organ ized as 6 5 ,5 3 6 w ords by 1 bit u sin g CMOS technology, and op erates from a sin g le 5-volt supply. T oshiba’s h ig h

TC5561P-55

Abstract: TC5561 TC5561J-55
Contextual Info: 65,536 WORD x 1 BIT CMOS STATIC RAM [d e s c r i p t i o n ! The TC5561P/J is a 65,536 bit high speed static random access memory organized as 65,536 words by 1 bit using CMOS technology, and operates from a single 5-volt supply. Toshiba’s high perform ance device technology provides both high speed and low power features w ith a maximum

TC5561P-55

Abstract: TC5561 TC5561J-45 tc5561j-55 TC5561P-45 A4518 DIN 5901
Contextual Info: 65,536 WORD x 1 BIT CMOS STATIC RAM [DESCRIPTION The TC 5561P/J is a 65,536 b it high, speed s ta tic ran d o m access m em ory o rg an ized as 65,536 w ords by 1 b it u sin g CMOS technology, an d o p erate s from a sin g le 5-volt supply. T o sh ib a’s h ig h