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    TC3879 Search Results

    TC3879 Datasheets (2)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    TC3879
    		Transcom 7 W Packaged Single-Bias PHEMT GaAs Power FETs Original PDF 55.89KB 2
    badge KTC3879
    		Shenzhen Heketai Electronics Co Ltd NPN bipolar transistor in SOT-23 package with 30 V collector-emitter voltage, 50 mA collector current, 150 mW power dissipation, and 100 MHz transition frequency, suitable for high-frequency amplifier applications. Original PDF
    SF Impression Pixel

    TC3879 Price and Stock

    Analog Devices Inc

    Analog Devices Inc LTC3879IMSE#PBF

    DC/DC CTRL, SYNC BUCK, 85DEG C;
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    Newark LTC3879IMSE#PBF Bulk 22 1
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    Analog Devices Inc LTC3879IMSE#PBF 2,405
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    Rochester Electronics LTC3879IMSE#PBF 36 1
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    Richardson RFPD LTC3879IMSE#PBF 148
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    Analog Devices Inc LTC3879IUD#PBF

    DC/DC CTRL, SYNC BUCK, 85DEG C;
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    Analog Devices Inc LTC3879IUD#PBF 5,951
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    Analog Devices Inc LTC3879EUD#TRPBF

    Fast, Wide Operating Rng No RS
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    Analog Devices Inc LTC3879EUD#TRPBF 7,500 2,500
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    Analog Devices Inc LTC3879EUD#PBF

    Fast, Wide Operating Rng No RS
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    Analog Devices Inc LTC3879EUD#PBF 5,234
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    Rochester Electronics LTC3879EUD#PBF 60 1
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    TME LTC3879EUD#PBF 1
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    Richardson RFPD LTC3879EUD#PBF 121
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    Vyrian LTC3879EUD#PBF 11,545
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    Analog Devices Inc LTC3879IMSE#TRPBF

    Fast, Wide Operating Rng No RS
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    Analog Devices Inc LTC3879IMSE#TRPBF 5,000 2,500
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    Vyrian LTC3879IMSE#TRPBF 7,874
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    TC3879 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    TC3879

    Abstract: thermal conductivity ceramic FET
    Contextual Info: TC3879 PRE1_20070518 Preliminary 7 W Packaged Single-Bias PHEMT GaAs Power FETs FEATURES PHOTO ENLARGEMENT ! 7W Typical Output Power ! 10.5dB Typical Linear Power Gain at 2.45 GHz ! High Linearity: IP3 = 48.5 dBm Typical ! High Power Added Efficiency: Nominal PAE of 35%


    Original     		TC3879 TC3879 thermal conductivity ceramic FET PDF

    GOC 33

    Contextual Info: SEM ICONDUCTOR TC3879S TECHNI CAL DATA EPI TAXI AL PLANAR NPN TRA NS IST OR HIGH FR E Q U E N C Y A PPLICATION. HF, V HF BAND AM PLIFIER A PPLICATIO N. FEA T U R E DIM • High Power Gain : Gpe=29dB Typ. (f=10.7MHz) M ILLIM ETER S A 2.9310.20 B 1.3010.20/-0.15


    OCR Scan     		KTC3879S GOC 33 PDF

    TC299

    Abstract: GHz Power FET TC3938 GHZ micro-X ceramic Package GHZ micro-X Package 35 micro-X ceramic Package FET Transistor Guide micro-x TC3953 TC3879
    Contextual Info: 20080520 Hybr i d I Cs P r oduc t S e l e c ti on G ui de Hybrid ICs Product No. ³ TC2996A TC2996B TC2996D TC2997A TC2997B TC2997C TC2997D TC2997G TC3989³ TC3989A³ Freq. GHz ³ P-1 dB (dBm)³ Gain (dB)³ IP3 (dBm)³ PAE (%)³ 1.6 1.9 2.45 1.6 1.9 2.1 2.45


    Original     		TC2996A TC2996B TC2996D TC2997A TC2997B TC2997C TC2997D TC2997G TC3989³ TC3989A³ TC299 GHz Power FET TC3938 GHZ micro-X ceramic Package GHZ micro-X Package 35 micro-X ceramic Package FET Transistor Guide micro-x TC3953 TC3879 PDF