TC3141
Abstract: GRM39C0G102J50V GRM39Y5V104Z25V
Contextual Info: TC3141 REV3_20040412 2.4 GHz 2W MMIC FEATURES PHOTO ENLARGEMENT • P-1 dB: 33 dBm Vg GND RF OUT • Small Signal Gain: 29 dB RF IN • Power Added Efficiency: 31 % RF IN RF OUT • IP3: 42 dBm GND Vd • DC Bias: 800 mA @ 7 V DESCRIPTION The TC3141 is a 2 stage PHEMT MMIC power amplifier. It is designed for use in low cost and high volume
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tc3141grm39c0g3r3c50vgrm39c0g2r5c50vgrm39c0g010c50v+4grm39c0gr75c50vgrm39c0g1r5c50vgrm39c0g102j50vgrm39y5v104z25v
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TC3141
Abstract: GRM39C0G102J50V GRM39Y5V104Z25V GRM39C0G010C50 GRM39C0G1R5C
Contextual Info: TC3143 REV0_20040402 2.1 - 2.2 GHz 2W MMIC FEATURES PHOTO ENLARGEMENT ! P-1 dB: 33 dBm ! Small Signal Gain: 29 dB ! Power Added Efficiency: 31 % ! IP3: 42 dBm ! DC Bias: 800 mA @ 7 V DESCRIPTION The TC3143 is a 2 stage PHEMT MMIC power amplifier. It is designed for use in low cost and high volume
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tc3143tc3141grm39c0g102j50vgrm39y5v104z25v+2grm39c0g010c50grm39c0g1r5c
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TC1076
Abstract: TC3532 TC1950 tc3141 TC1900 TC3331 tc1953a TC4522 TC4531 TC1037
Contextual Info: 6/26/2008 MMICs Product Selection Guide Product No. Freq. GHz G.O.F. (+/-dB) Gain (dB) Pout (dBm) 41.5 0.5 0.6 22 19 16 8.5 11.5 P-1dB (dBm) P-2dB (dBm) P-3dB (dBm) TC1037 TC1073 TC1076 TC1900 TC1901 3.1~3.5 9.2~10.2 9.2~10.2 0.00003~12 2~20 TC1902 6~18
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tc1037tc1073tc1076tc1900+13tc1901tc1902tc1954tc1956tc1985tc4820tc3532tc1950tc3141tc3331tc1953atc4522tc4531
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TDA 7240 equivalent
Abstract: TDA 7240 pin diagram
Contextual Info: ^^PÌ|^^§ÌPS!H1Ì!|Ì|PIPS§I§|ÌSÌS TOSHIBA % L O G I C / M E M O R Y ^7240 0Q2QÔÛ4 S * T 0 S 2 8 4,194,304 WORD x 1 BIT fiYNAMIC RAM * This is advanced information and specifications are subject to change without notice. 7 " ^ ¿ - “2 3 - / S ’"
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tc514100j/ztc514100j/z-80tc5141ooj/zt-46-23-15+2tda 7240 equivalenttda 7240 pin diagram
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AZL-70
Abstract: TC514100APL TC514100 tc3141
Contextual Info: 4,194,304 WORD x 1 BIT DYNAMIC RAM PRELIMINARY D E S C R IP T IO N T he TC514100APL/AJL/ASJL/AZL is th e new generation dynam ic RAM organized 4,194,304 words by 1 bit. The TC514100APL/AJL/ASJL/AZL utilizes TOSHIBA'S CMOS Silicon g ate process technology as
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Contextual Info: 4,1 94 ,3 0 4 W O R D x PRELIMINARY 1 BIT D Y N A M IC RAM DESCRIPTION The TC514100APL/AJL/ASJL/AZL is the new generation dynamic RAM organized 4,194,304 words by 1 bit. The TC514100APL/AJL/ASJL/AZL utilizes TOSHIBA’S CMOS Silicon gate process technology as
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tc514100apl/ajl/asjl/azl300/350miltc514i00apl/ajl/asjl/azla512k+4tc5141tc514100tc5141ooapl/ajl/azl-10
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