TC2506 Search Results

Contextual Info: TC2500 – TC2506 25A GLASS PASSIVATED 5/16” TIN CAN PRESS-FIT DIODE WON-TOP ELECTRONICS Pb Features  Glass Passivated Die Construction     Low Leakage Low Cost High Surge Current Capability Typical IR less than 5.0µA Anode + D Mechanical Data

Contextual Info: TC2500 – TC2506 WTE POWER SEMICONDUCTORS Pb 25A GLASS PASSIVATED 5/16" TIN CAN PRESS-FIT DIODE Features  Glass Passivated Die Construction  Low Leakage  Low Cost Anode +  High Surge Current Capability  Typical IR less than 5.0µA

TC2500

Abstract: TC2501 TC2502 TC2503 TC2504 tin can TC2500-LF
Contextual Info: TC2500 – TC2506 WTE POWER SEMICONDUCTORS Pb 25A GLASS PASSIVATED 5/16" TIN CAN PRESS-FIT DIODE Features ! Glass Passivated Die Construction ! Low Leakage ! Low Cost Anode + ! High Surge Current Capability ! Typical IR less than 5.0µA

SMD DIODE UF4007

Abstract: 1N5819 SOD-323 1N4007 sod-123 1a7 sot-23 FR107 SOD-123 uf5408 SMD diode Bosch alternator diode bosch alternator 1N5822 SMD 1n5400 smd
Contextual Info: SELECTOR GUIDES WTE POWER SEMICONDUCTORS Pb Automotive Rectifiers Superfast Recovery Rectifiers Automotive Rectifiers are intended for use in automobile and high current applications. Won-Top Electronics manufactures a full range of performance characteristics Press Fit Diodes, Button Diodes and

2SK2367

Abstract: 2SK2368 MP-88
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

NEC 2506

Abstract: 2sk2368 transistor 2SK2368 2SK2367 IEI-1213 MP-88
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTORS 2SK2367/2SK2368 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2367/2SK2368 is N-Channel MOS Field Effect Transistor in millimeter 2SK2367: RDS (on) = 0.5 Ω (VGS = 10 V, ID = 8.0 A)

NEC 2506

Abstract: 2SK2367 2368 d1139 2SK2368 MP-88 D11397EJ4V0DS
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2367,2368 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-Channel MOS Field Effect Transistors designed for high voltage switching applications. FEATURES • Low on-state resistance 2SK2367: RDS on = 0.5 Ω MAX. (VGS = 10 V, ID = 8.0 A)

OM8361

Abstract: TDA8362 TDA8362 B TDA4665 TDA8362 s TDA8362 a TDA8395 TC2980 TC1420F TC298
Contextual Info: OM8361/TDA8362 OM8361/TDA8362 为飞利浦公司开发的单片集成电路 来完成全部小信号的处理 OM8361/TDA8362 集成度较高 可完成中频 视频 色度及行场扫描等小信号的处理 具 有 PAL/NTSC 自动识别彩色解码电路 若外接 TDA8395 即可方便实现 SECAM 解码 集

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

2sk 2506

Abstract: 2sk2367
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTORS 2SK2367/2SK2368 SW ITCHING N-CHANNEL POWER M O S FET INDUSTRIAL USE DESCRIPTION P A C K A G E D IM E N S IO N S The 2SK2367/2SK2368 is IM-Channel MOS Field Effect T ra n s is to r in m illim e te r designed fo r hig h v o lta g e s w itc h in g a pplications.