TC-118 SD Search Results

MS3416L464S-07

Abstract: 32MB sdram
Contextual Info: MACROTRON MS3416L464S-07 4Mb x 64, 168-Pin DIMM 3.3V Synchronous DRAMs with SPD 32MB SDRAM DIMM FRONT VIEW BACK VIEW GENERAL DESCRIPTION FEATURES The Macrotron MS3416L464S-07 is a PC133 Compliant 4M bit x 64 bit Synchronous Dynamic RAM high density memory module. It consists of four CMOS 4M x 16 bit

ic 006

Abstract: SD8250 F B J22
Contextual Info: SD8250 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .400 2L FLG DESCRIPTION: L J N B E C G F I Q M A XIM U M M IN IM U M D IM in ch e s / m m in ch e s / m m .140 / 3.56 A .110 / 2.80 B .110 / 2.80 .395 / 10.03 .407 / 10.34 .193 / 4.90 E MAXIMUM RATINGS .230 / 5.84

Contextual Info: Product Specifications PART NO: VL43B2863A-H0S-G9S-K9S REV: 1.0 General Information 1GB 128MX72 DDR3 SDRAM ECC 204 PIN SO-RDIMM Description: The VL43B2863A is a 128M X 72 DDR3 SDRAM high density SO-RDIMM. This memory module consists of nine CMOS 128Mx8 bit with 8 banks DDR3 Synchronous DRAMs in BGA packages, a 28-bit registered buffer/

pinout DDR3-1333

Abstract: PC3-10600 PC3-12800 ddr3 1333 VL43B2863A-H0S-G9S-K9S 97A8
Contextual Info: Product Specifications PART NO: VL43B2863A-H0S-G9S-K9S REV: 1.0 General Information 1GB 128MX72 DDR3 SDRAM ECC 204 PIN SO-RDIMM Description: The VL43B2863A is a 128M X 72 DDR3 SDRAM high density SO-RDIMM. This memory module consists of nine CMOS 128Mx8 bit with 8 banks DDR3 Synchronous DRAMs in BGA packages, a 28-bit registered buffer/

PAS 1066

Abstract: PC3-10600 tra 103
Contextual Info: Product Specifications PART NO: REV: 1.0 VL41B2863A-K9M-F8M-E7M General Information 1GB 128MX72 DDR3 SDRAM ECC 204 PIN SO-UDIMM Description: The VL41B2863A is a 128Mx72 DDR3 SDRAM high density SO-UDIMM. This memory module consists of nine CMOS 128Mx8 bit with 8 banks DDR3 Synchronous DRAMs in BGA packages, and a 2K EEPROM in an 8pin MLF package. This module is a 204-pin small-outline dual in-line memory module and is intended for

Contextual Info: Product Specifications PART NO: REV: 1.1 VL41B2863A-K9S-F8S-E7S General Information 1GB 128MX72 DDR3 SDRAM ECC UNBUFFERED SO-UDIMM 204-PIN Description: The VL41B2863A is a 128Mx72 DDR3 SDRAM high density SO-UDIMM. This memory module consists of nine CMOS 128Mx8 bit with 8 banks DDR3 Synchronous DRAMs in BGA packages, and a 2K EEPROM with

Contextual Info: Product Specifications PART NO: REV: 1.0 VL41B2863A-K9M-F8M-E7M General Information 1GB 128MX72 DDR3 SDRAM ECC 204 PIN SO-UDIMM Description: The VL41B2863A is a 128Mx72 DDR3 SDRAM high density SO-UDIMM. This memory module consists of nine CMOS 128Mx8 bit with 8 banks DDR3 Synchronous DRAMs in BGA packages, and a 2K EEPROM in an 8pin MLF package. This module is a 204-pin small-outline dual in-line memory module and is intended for

DDR3-1066

Abstract: DDR3-1333 PC3-10600
Contextual Info: Product Specifications PART NO: REV: 1.1 VL41B2863A-K9S-F8S-E7S General Information 1GB 128MX72 DDR3 SDRAM ECC UNBUFFERED SO-UDIMM 204-PIN Description: The VL41B2863A is a 128Mx72 DDR3 SDRAM high density SO-UDIMM. This memory module consists of nine CMOS 128Mx8 bit with 8 banks DDR3 Synchronous DRAMs in BGA packages, and a 2K EEPROM with

Contextual Info: Product Specifications PART NO: REV: 1.0 VL41B2863F-K9S-F8S-E7S General Information 1GB 128MX72 DDR3 SDRAM ULP ECC 204 PIN SO-UDIMM Description: The VL41B2863F is a 128Mx72 DDR3 SDRAM high density SO-UDIMM. This memory module consists of nine CMOS 128Mx8 bit with 8 banks DDR3 Synchronous DRAMs in BGA packages, and a 2K EEPROM in an 8-pin

DDR3-1066

Abstract: DDR3-1333 PC3-10600 106A2 VL41B2863F-K9S-F8S-E7S
Contextual Info: Product Specifications PART NO: VL41B2863F-K9S-F8S-E7S REV: 1.0 General Information 1GB 128MX72 DDR3 SDRAM ULP ECC 204 PIN SO-UDIMM Description: The VL41B2863F is a 128Mx72 DDR3 SDRAM high density SO-UDIMM. This memory module consists of nine CMOS 128Mx8 bit with 8 banks DDR3 Synchronous DRAMs in BGA packages, and a 2K EEPROM in an 8-pin

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET D S 0 5 -1 1 1 1 2 -1 E MEMORY NiiiiiiMlllllliiii ËilÈÊËËËÈiËÈËsssi SYNCHRONOU ¡ DYNAMIC RAM DIMM MB8502S072AC-100/-84/-67 200-pin, 1-bank, based on 2 M x 8 BIT SDRAMs with PLL • DESCRIPTION The Fujitsu MB8502S072AC is afully decoded, CMOS Synchronous Dynamic Random Access Memory SDRAM

Contextual Info: MICROSEMI CORP/ lilATERTOUN SDE D RECTIFIER ASSEMBLIES • Dai22bl 2flb ■ U N I T JANTX 483-1 Three Phase Bridges, 25 Amp, M ilitary Approved jantx 483-3 DESCRIPTION This military high-current three phase bridge series is assembled with diodes which have been subjected to TX type

Contextual Info: Product Specifications PART NO: REV: 1.1 VL41B5663A-K9S-F8S-E7S General Information 2GB 256MX72 DDR3 SDRAM ECC UNBUFFERED SO-UDIMM 204-PIN Description: The VL41B5663A is a 256Mx72 DDR3 SDRAM high density SO-UDIMM. This memory module consists of eighteen CMOS 128Mx8 bit with 8 banks DDR3 Synchronous DRAMs in BGA packages, and a 2K EEPROM

DDR3-1066

Abstract: DDR3-1333 PC3-10600 VL41B5663A-K9S-F8S-E7S cmd 0517 VL41B5663A
Contextual Info: Product Specifications PART NO: REV: 1.1 VL41B5663A-K9S-F8S-E7S General Information 2GB 256MX72 DDR3 SDRAM ECC UNBUFFERED SO-UDIMM 204-PIN Description: The VL41B5663A is a 256Mx72 DDR3 SDRAM high density SO-UDIMM. This memory module consists of eighteen CMOS 128Mx8 bit with 8 banks DDR3 Synchronous DRAMs in BGA packages, and a 2K EEPROM

vl41B5663

Abstract: 850C PC3-10600 d2ps
Contextual Info: Product Specifications PART NO: VL41B5663A-K9S-F8S-E7S-I REV: 1.0 General Information 2GB 256MX72 DDR3 SDRAM ECC 204 PIN SO-UDIMM Description: The VL41B5663A is a 256Mx72 DDR3 SDRAM high density SO-UDIMM. This memory module consists of eighteen CMOS 128Mx8 bit with 8 banks DDR3 Synchronous DRAMs in BGA packages, and a 2K EEPROM

Contextual Info: Product Specifications PART NO: REV: 1.0 VL43B5663A-K9S/F8S/E7S General Information 2GB 256MX72 DDR3 SDRAM ECC 204 PIN SO-RDIMM Description: The VL43B5663A is a 256Mx72 DDR3 SDRAM high density SO-RDIMM. This memory module consists of eighteen CMOS 128Mx8 bit with 8 banks DDR3 Synchronous DRAMs in BGA packages, a 28-bit registered

SD1538-8

Abstract: TACAN
Contextual Info: ASI SD1538-8 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE 400 2L FLG A DESCRIPTION: A 4x .062 x 45° The ASI SD1538-8 is a Common Base Device Designed for DME IFF, and TACAN Pulse Applications. 2xB C F E D G FEATURES INCLUDE: 2xR H J K I • Gold Metelization

TA8172AF

Abstract: TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P
Contextual Info: Index of Type Number Type Number 015Z10 015Z11 015Z12 015Z2.0 015Z2.0-12 015Z2.2 015Z2.4 015Z2.7 015Z3.0 015Z3.3 015Z3.6 015Z3.9 015Z4.3 015Z4.7 015Z5.1 015Z5.6 015Z6.2 015Z6.8 015Z7.5 015Z8.2 015Z9.1 02CZ10 02CZ11 0 2 C Z 12 0 2 C Z 13 0 2 C Z 15 0 2 C Z 16

Contextual Info: R32C/118 Group Datasheet Datasheet R32C/118 Group RENESAS MCU 1. REJ03B0255-0110 Rev.1.10 Jun 23, 2010 Overview 1.1 Features The M16C Family offers a robust platform of 32-/16-bit CISC microcomputers MCUs featuring high ROM code efficiency, extensive EMI/EMS noise immunity, ultra-low power consumption, high-speed processing

Contextual Info: R32C/118 Group Datasheet R32C/118 Group RENESAS MCU 1. REJ03B0255-0100 Rev.1.00 Nov 19, 2009 Overview 1.1 Features The M16C Family offers a robust platform of 32-/16-bit CISC microcomputers MCUs featuring high ROM code efficiency, extensive EMI/EMS noise immunity, ultra-low power consumption, high-speed processing

R5F64186NFB

Abstract: R5F64189 R5F64185 R5F64189HD R5F64189HDFD R5F64186 ISO11898-1 PLQP0100KB-A PLQP0144KA-A R5F64189DFD
Contextual Info: R32C/118 Group Datasheet Datasheet R32C/118 Group RENESAS MCU 1. REJ03B0255-0110 Rev.1.10 Jun 23, 2010 Overview 1.1 Features The M16C Family offers a robust platform of 32-/16-bit CISC microcomputers MCUs featuring high ROM code efficiency, extensive EMI/EMS noise immunity, ultra-low power consumption, high-speed processing

J31 transistor

Abstract: f j31
Contextual Info: SD1474 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 2L FLG A The ASI SD1474 is acommom emitter device, designed for pulsed applications in the 400-500 MHz frequency range. A 4x .062 x 45° 2xB .040 x 45° C F E D G FEATURES: I • Emitter Ballasted

Contextual Info: R32C/118 Group Datasheet Datasheet R32C/118 Group RENESAS MCU 1. R01DS0065EJ0120 Rev.1.20 Feb 6, 2013 Overview 1.1 Features The M16C Family offers a robust platform of 32-/16-bit CISC microcomputers MCUs featuring high ROM code efficiency, extensive EMI/EMS noise immunity, ultra-low power consumption, high-speed processing

irf 1830

Abstract: d300n DO-205AB sd300 SD300N
Contextual Info: Bulletin I2081 rev. C 03/03 SD300N/R SERIES Stud Version STANDARD RECOVERY DIODES Features Wide current range High voltage ratings up to 3200V 380A High surge current capabilities Stud cathode and stud anode version Standard JEDEC types Typical Applications