TC-118 SD Search Results

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Abstract: SD8250 F B J22
Contextual Info: SD8250 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .400 2L FLG DESCRIPTION: L J N B E C G F I Q M A XIM U M M IN IM U M D IM in ch e s / m m in ch e s / m m .140 / 3.56 A .110 / 2.80 B .110 / 2.80 .395 / 10.03 .407 / 10.34 .193 / 4.90 E MAXIMUM RATINGS .230 / 5.84

Contextual Info: Product Specifications PART NO: VL43B2863A-H0S-G9S-K9S REV: 1.0 General Information 1GB 128MX72 DDR3 SDRAM ECC 204 PIN SO-RDIMM Description: The VL43B2863A is a 128M X 72 DDR3 SDRAM high density SO-RDIMM. This memory module consists of nine CMOS 128Mx8 bit with 8 banks DDR3 Synchronous DRAMs in BGA packages, a 28-bit registered buffer/

Contextual Info: Product Specifications PART NO: REV: 1.1 VL41B2863A-K9S-F8S-E7S General Information 1GB 128MX72 DDR3 SDRAM ECC UNBUFFERED SO-UDIMM 204-PIN Description: The VL41B2863A is a 128Mx72 DDR3 SDRAM high density SO-UDIMM. This memory module consists of nine CMOS 128Mx8 bit with 8 banks DDR3 Synchronous DRAMs in BGA packages, and a 2K EEPROM with

Contextual Info: Product Specifications PART NO: REV: 1.0 VL41B2863A-K9M-F8M-E7M General Information 1GB 128MX72 DDR3 SDRAM ECC 204 PIN SO-UDIMM Description: The VL41B2863A is a 128Mx72 DDR3 SDRAM high density SO-UDIMM. This memory module consists of nine CMOS 128Mx8 bit with 8 banks DDR3 Synchronous DRAMs in BGA packages, and a 2K EEPROM in an 8pin MLF package. This module is a 204-pin small-outline dual in-line memory module and is intended for

Contextual Info: Product Specifications PART NO: REV: 1.0 VL41B2863F-K9S-F8S-E7S General Information 1GB 128MX72 DDR3 SDRAM ULP ECC 204 PIN SO-UDIMM Description: The VL41B2863F is a 128Mx72 DDR3 SDRAM high density SO-UDIMM. This memory module consists of nine CMOS 128Mx8 bit with 8 banks DDR3 Synchronous DRAMs in BGA packages, and a 2K EEPROM in an 8-pin

Contextual Info: Product Specifications PART NO: REV: 1.1 VL41B5663A-K9S-F8S-E7S General Information 2GB 256MX72 DDR3 SDRAM ECC UNBUFFERED SO-UDIMM 204-PIN Description: The VL41B5663A is a 256Mx72 DDR3 SDRAM high density SO-UDIMM. This memory module consists of eighteen CMOS 128Mx8 bit with 8 banks DDR3 Synchronous DRAMs in BGA packages, and a 2K EEPROM

Contextual Info: Product Specifications PART NO: REV: 1.0 VL43B5663A-K9S/F8S/E7S General Information 2GB 256MX72 DDR3 SDRAM ECC 204 PIN SO-RDIMM Description: The VL43B5663A is a 256Mx72 DDR3 SDRAM high density SO-RDIMM. This memory module consists of eighteen CMOS 128Mx8 bit with 8 banks DDR3 Synchronous DRAMs in BGA packages, a 28-bit registered

SD1538-8

Abstract: TACAN
Contextual Info: ASI SD1538-8 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE 400 2L FLG A DESCRIPTION: A 4x .062 x 45° The ASI SD1538-8 is a Common Base Device Designed for DME IFF, and TACAN Pulse Applications. 2xB C F E D G FEATURES INCLUDE: 2xR H J K I • Gold Metelization

TA8172AF

Abstract: TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P
Contextual Info: Index of Type Number Type Number 015Z10 015Z11 015Z12 015Z2.0 015Z2.0-12 015Z2.2 015Z2.4 015Z2.7 015Z3.0 015Z3.3 015Z3.6 015Z3.9 015Z4.3 015Z4.7 015Z5.1 015Z5.6 015Z6.2 015Z6.8 015Z7.5 015Z8.2 015Z9.1 02CZ10 02CZ11 0 2 C Z 12 0 2 C Z 13 0 2 C Z 15 0 2 C Z 16

Contextual Info: R32C/118 Group Datasheet Datasheet R32C/118 Group RENESAS MCU 1. REJ03B0255-0110 Rev.1.10 Jun 23, 2010 Overview 1.1 Features The M16C Family offers a robust platform of 32-/16-bit CISC microcomputers MCUs featuring high ROM code efficiency, extensive EMI/EMS noise immunity, ultra-low power consumption, high-speed processing

Contextual Info: R32C/118 Group Datasheet Datasheet R32C/118 Group RENESAS MCU 1. R01DS0065EJ0120 Rev.1.20 Feb 6, 2013 Overview 1.1 Features The M16C Family offers a robust platform of 32-/16-bit CISC microcomputers MCUs featuring high ROM code efficiency, extensive EMI/EMS noise immunity, ultra-low power consumption, high-speed processing

irf 1830

Abstract: d300n DO-205AB sd300 SD300N
Contextual Info: Bulletin I2081 rev. C 03/03 SD300N/R SERIES Stud Version STANDARD RECOVERY DIODES Features Wide current range High voltage ratings up to 3200V 380A High surge current capabilities Stud cathode and stud anode version Standard JEDEC types Typical Applications

d300n

Abstract: sd300 DO-205AB SD300N
Contextual Info: Previous Datasheet Index Next Data Sheet Bulletin I2081/A SD300N/R SERIES Stud Version STANDARD RECOVERY DIODES Features 380A Wide current range High voltage ratings up to 3200V High surge current capabilities Stud cathode and stud anode version Standard JEDEC types

irf 1830

Abstract: DO-205AB SD300N
Contextual Info: Bulletin I2081 rev. A 08/94 SD300N/R SERIES Stud Version STANDARD RECOVERY DIODES Features 380A Wide current range High voltage ratings up to 3200V High surge current capabilities Stud cathode and stud anode version Standard JEDEC types TypicalApplications

"MARKING CODE S1"

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# SD107WS Features • • • • Low turn-on voltage Fast switching Microminiature plastic package This device is protected by a PN junction guard ring against

"MARKING CODE S1"

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# SD107WS Features • • • • Low turn-on voltage Fast switching Microminiature plastic package This device is protected by a PN junction guard ring against

SD300N

Contextual Info: Bulletin I2081 rev. C 03/03 SD300N/R SERIES Stud Version STANDARD RECOVERY DIODES Features Wide current range High voltage ratings up to 3200V 380A High surge current capabilities Stud cathode and stud anode version Standard JEDEC types Typical Applications

Contextual Info: Product Specifications PART NO: REV: 1.0 VL53B5663A-K9S-F8S-E7S General Information 2GB 256MX72 DDR3 SDRAM ECC 244 PIN Mini-RDIMM Description: The VL53B5663A is a 256Mx72 DDR3 SDRAM high density Mini-RDIMM. This memory module consists of eighteen CMOS 128Mx8 bit with 8 banks DDR3 Synchronous DRAMs in BGA packages, a 28-bit registered

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# SD107WS Features • • • • Low turn-on voltage Fast switching Microminiature plastic package This device is protected by a PN junction guard ring against

Contextual Info: Product Specifications PART NO: REV: 1.0 VL53B5263A-K9M-F8M-E7M General Information 4GB 512MX72 DDR3 SDRAM ECC 244 PIN Mini-RDIMM Description: The VL53B5263A is a 512M X 72 DDR3 SDRAM high density Mini-RDIMM. This memory module consists of eighteen CMOS 256Mx8 bit with 8 banks DDR3 Synchronous DRAMs in BGA packages, a 28-bit registered

APM60

Contextual Info: APM6005NF N-Channel Enhancement Mode MOSFET Features • Pin Description SD 60V/80A, G RDS ON =4.5mΩ (typ.) @ VGS=10V • • • Avalanche Rated Reliable and Rugged Top View of TO-220 Lead Free and Green Devices Available (RoHS Compliant) D Applications

code sg

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# SD107WS Features • • • • Low turn-on voltage Fast switching Microminiature plastic package This device is protected by a PN junction guard ring against

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-4516DA726 16 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE Description The MC-4516DA726 is an 16,777,216 words by 72 bits synchronous dynamic RAM module on which 18 pieces of 64M SDRAM : ,uPD4564441 Revision E are assembled.

Contextual Info: Product Specifications PART NO: REV: VL33B5663F-K9M-F8M-E7M 1.1 General Information 2GB 256MX72 DDR3 SDRAM ULP ECC RDIMM 240 PIN Description The VL33B5663F is a 256Mx72 DDR3 SDRAM high density RDIMM. This memory module consists of eighteen CMOS 128Mx8 bit with 8 banks DDR3 Synchronous DRAMs in BGA packages, a 28-bit registered buffer/