TC 9147 Search Results

smd 10 20U

Abstract: 4BC20U irg4pc50ud 91571 4bc30ud G4BC IRG4PH50UD
Contextual Info: International IG R Rectifier Part Number IGBTs VCES Collector-to-Emitter Voltage V IKax.Va(oit) Collector-to-Emitter Voltage M •c Continuous Collector Current T ,= 2 5 °C Tc = 25°C (A) (A) Pd Max. Power Dissipation (W) Fax on Demand Number Case Outline

IRG4BC20UD

Abstract: CPV362M4F irg4ph50ud GA400TD25S IRG4PC50 CPV362M4U
Contextual Info: IGBTs www.irf.com V CES Collector-to-Emitter Voltage V Part Number Max. V CE(on) Collector-to-Emitter Voltage (V) IC Continuous Collector Current T C =25°C TC =25°C (A) (A) PD Max. Power Dissipation (W) Fax on Demand Number Case Outline Key Discrete High Efficiency WARP(tm) Speed

IRFM9034

Abstract: irh7c50se IRFM460 irhy IRFE310 international rectifier p JANSR2N7261
Contextual Info: International Rectifier Government and Space Products BVDSS Part Number Channel V RDS(on) (Ω) PD @ TC = 25°C ID @ T =100°C C (A) ID @ T =25 C (A) Total Dose Rating Rads (Si) (W) Fax-on-Demand HEXFET Power MOSFETs to view a data sheet, click on the part number

F100K

Abstract: SY100S336 SY100S336A SY100S336AFC SY100S336AJC SY100S336AJCTR
Contextual Info: ENHANCED 4-STAGE COUNTER/SHIFT REGISTER FEATURES DESCRIPTION • Max. shift frequency of 700MHz ■ Clock to Q delay max. of 1100ps ■ Sn to TC speed improved by 50% ■ Sn set-up and hold time reduced by more than 50% ■ IEE min. of –170mA ■ Industry standard 100K ECL levels

SY100S336

Abstract: SY100S336A SY100S336AFC SY100S336AJC SY100S336AJCTR F100K
Contextual Info: ENHANCED 4-STAGE COUNTER/SHIFT REGISTER FEATURES DESCRIPTION • Max. shift frequency of 700MHz ■ Clock to Q delay max. of 1100ps ■ Sn to TC speed improved by 50% ■ Sn set-up and hold time reduced by more than 50% ■ IEE min. of –170mA ■ Industry standard 100K ECL levels

SMD H21

Abstract: international rectifier SMD 91313 smd 91432
Contextual Info: International IÖ R Rectifier Port Number Government and Space Products Byoss ^DS on (V) (fiJ T f= 2S °C (*) • d Pd @ Tc= 25°C (W) I ^ J O IP C W 1EXFET Power MOSFETs Fax Case on Demand Outline Key Number SEE Hardened SMD-1 N-Channel IR H N 7 4 5 0 S E

IRF3415

Abstract: K 9008
Contextual Info: PD - 91477E IRF3415 HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 150V RDS on = 0.042Ω G Description ID = 43A S Fifth Generation HEXFETs from International Rectifier

Contextual Info: PD - 91477E IRF3415 HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 150V RDS on = 0.042Ω G Description ID = 43A S Fifth Generation HEXFETs from International Rectifier

Contextual Info: PD - 91477E IRF3415 HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 150V RDS on = 0.042Ω G Description ID = 43A S Fifth Generation HEXFETs from International Rectifier

IRF3415

Abstract: IRF3415 circuit IRF3415 equivalent 1810ms
Contextual Info: PD - 91477D IRF3415 HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 150V RDS on = 0.042Ω G Description ID = 43A S Fifth Generation HEXFETs from International Rectifier

IRF6215

Contextual Info: PD - 91479B IRF6215 HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l D l VDSS = -150V RDS on = 0.29Ω G ID = -13A S Fifth Generation HEXFETs from International Rectifier

Contextual Info: PD - 91479B IRF6215 HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l D l VDSS = -150V RDS on = 0.29Ω G ID = -13A S Fifth Generation HEXFETs from International Rectifier

IRF6215

Abstract: 49/diode 66a
Contextual Info: 2002-02-21 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 71-150-25 IRF6215 HEXFET TO-220 PD - 91479B IRF6215 HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating

IRF6215

Contextual Info: PD - 91479B IRF6215 HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l D l VDSS = -150V RDS on = 0.29Ω G ID = -13A S Fifth Generation HEXFETs from International Rectifier

IGBT IRG4PC50UD

Abstract: IRG4PC50UD
Contextual Info: PD 91471B IRG4PC50UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter

IRG4PC50UD

Abstract: IGBT IRG4PC50UD
Contextual Info: PD 91471B IRG4PC50UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter

IRG4PC50U

Abstract: IRG4PC50
Contextual Info: PD 91470F IRG4PC50U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

Contextual Info: PD 91470F IRG4PC50U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

91470F

Abstract: IRG4PC50U IRG4PC50 DSA0031117 55A TO-247AC
Contextual Info: PD 91470F IRG4PC50U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

Contextual Info: PD-91477D International IÖR Rectifier IRF3415 HEXFET Power MOSFET • • • • • Advanced Process Technology Dynam ic dv/dt Rating 1 7 5 °C O perating Tem perature Fast Switching Fully A valanche Rated V dss = 150 V R ü S o n = 0 . 0 4 2 Î 2

SY10E016

Abstract: MC10H016 SY100E016
Contextual Info: 8-BIT SYNCHRONOUS BINARY UP COUNTER SY10E016 SY100E016 DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ The SY10/100E016 are high-speed synchronous, presettable and cascadable 8-bit binary counters designed for use in new, high-performance ECL systems. Architecture

SY10E016

Contextual Info: SY10E016 SY100E016 FINAL 8-BIT SYNCHRONOUS BINARY UP COUNTER DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ The SY10/100E016 are high-speed synchronous, presettable and cascadable 8-bit binary counters designed for use in new, high-performance ECL systems. Architecture

F100K

Abstract: SY100S336 SY100S336FC SY100S336JC SY100S336JCTR
Contextual Info: 4-STAGE COUNTER/ SHIFT REGISTER FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION The SY100S336 functions either as a modulo-16 up/ down counter or as a 4-bit bidirectional shift register and is designed for use in high-performance ECL systems. Three

F100K

Abstract: SY100S336 SY100S336FC SY100S336JC SY100S336JCTR
Contextual Info: 4-STAGE COUNTER/ SHIFT REGISTER FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION The SY100S336 functions either as a modulo-16 up/ down counter or as a 4-bit bidirectional shift register and is designed for use in high-performance ECL systems. Three