TC 785 SIEMENS Search Results

TCA 290

Abstract: tca780 tca 780 tc 785 siemens triac 289 tca 785 application TCA 785 IC Fully Controlled AC Power Controller. Circuit for Two High-Power Thyristors siemens triac max 785
Contextual Info: SIEMENS P hase C o n tro l IC T C A 785 Features • • • • • • • • Reliable recognition of zero passage Large application scope May be used as zero point switch LSL compatible Three-phase operation possible 3 ICs Output current 250 mA Large ramp current range

TCA785

Abstract: tca 780 CI TCA 785 tca780 siemens tca-785 TCA 785 tc 785 siemens siemens lsl TCA 785 IC application tca 780
Contextual Info: SIEMENS Phase Control IC TCA 785 Bipolar 1C Features • • • • • • • • Reliable recognition of zero passage Large application scope May be used as zero point switch LSL compatible Three-phase operation possible 3 ICs Output current 250 mA Large ramp current range

2 Wavelength Laser Diode

Abstract: RLD78PZU1 rld78pz
Contextual Info: LASER COMPONENTS GmbH Hausanschrift / Home address Postanschrift / P.O. Box Werner-von-Siemens-Str. 15 Postfach 1129 D-82140 Olching D-82133 Olching T el. 08142 28640 • Fax (08142) 286411 http://www.lasercomponents.de • E-Mail: info@lasercomponents.de

IR thyristor manual

Abstract: 7400
Contextual Info: Hinweise für Ihre LiteraturBestellung How to order Literature Folgende Hinweise gelten nur für Bestel­ lungen innerhalb Deutschlands. The following only applies placed in Germany. to orders Richten Sie bitte Ihre Bestellung an Send your order to Siemens AG

Contextual Info: ÖÖD D • ÔE3SbQ5 0015074 ö H S I E 6 88D 15074 D T - 3 W "/ I BUZ 361 SIEMENS AKTIENûESELLSCHAF Main ratings N-Channel Vaa a 800 V Drain-source voltage Continuous drain current /„ = 2 ,9 A Drain-source on-resistance ^DS on 4,5 £2 Description Case

transistor mj 4035

Abstract: tc 785 siemens SC160
Contextual Info: SIEMENS BUZ 173 SIPMOS Power Transistor • P channel • Enhancement mode • Avalanche rated Type BUZ173 Vbs -200 V b -3.6 A ^DS on Package Ordering Code 1.5 n TO-220 AB C67078-S1452-A2 Maximum Ratings Parameter Symbol Continuous drain current Values

DIODE S45

Contextual Info: ÖÖD D • ÔE3SbQ5 0015074 ö H S I E 6 88D 15074 D BUZ 361 SIEMENS AKTIENûESELLSCHAF Main ratings N-Channel a 800 V Drain-source voltage Vos = 2,9 A Continuous drain current h Drain-source on-resistance ^DS on 4,5 a Description FREDET with fast-recovery reverse diode, N-channel, enhancement mode

buz22

Contextual Info: SIEMENS BUZ 22 SIPMOS Power MOS Transistor VDS = 100 V /D = 34 A = 0.055 Q ^ D S o n • N channel • E nhancem ent mode • A valanche-proof • Package: T O -2 2 0 A B ') Type Ordering code BUZ 22 C 6 7 0 78-S 1 33 3-A 2 Maximum Ratings Parameter Symbol

thyristor k 202 russian

Abstract: russian diode kp20a 600v kp20a ZP20A optothyristor KP300A KP200A T143-630 SCR zp5a
Contextual Info: CONTENT RECTIFIER DIODES THREADED STUD DESIGN RUSSIAN PURPOSE 2 PRESS PACK RECTIFIER DIODES (RUSSIAN PURPOSE) 2 AVALANCHE RECTIFIER DIODES THREADED STUD DESIGN (RUSSIAN PURPOSE) 3 AVALANCHE RECTIFIER DIODES PRESS PACK (RUSSIAN PURPOSE) 3 FAST RECOVERY DIODES THREADED STUD DESIGN (RUSSIAN PURPOSE)

SPB80N03L

Abstract: spp60n
Contextual Info: SIEMENS SPP80N03L SPB80N03L Preliminary data SIPMOS Power Transistor • N-Channel • Enhancement mode • Avalanche rated • Logic Level • dv/df rated • 175°C operating temperature Type SPP80N03L Vbs 30 V h 80 A SPB80N03L f l DS on @ VGS 0.008 Q

BSS-229

Abstract: BSS229
Contextual Info: SIEMENS SIPMOS Small-Signal Transistor BSS 229 • VDS • /„ • • • • • 250 V 0.07 A ^ D S o n 100 S2 N channel Depletion mode High dynamic resistance Available grouped in VQS(th) Type Ordering Code Tape and Reel Information PinC onfigu ration Marking Package

siemens datenbuch

Contextual Info: SIEMENS 1 Erläuterungen der Datenblattwerte Explanation of Data Sheet Parameters Symbole, Begriffe, Normen 1 Symbole und Begriffe der verwendeten Größen Symbols, Terms, Standards Symbols and Terms of Magnitudes Used Symbole Symbols Begriffe Terms A Anode

Contextual Info: HiPerFETTM Power MOSFET VDSS ID25 IXFN24N100 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1000 V VGSS Continuous ±20 V VGSM Transient ± 30

IXFN24N100

Contextual Info: IXFN24N100 HiPerFETTM Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1000 V VGSS Continuous ±20 V VGSM

IXFR24N100

Abstract: ISOPLUS247
Contextual Info: IXFR24N100 HiPerFETTM Power MOSFET ISOPLUS247TM VDSS ID25 RDS on trr (Electrically Isolated Back Surface) = = ≤ ≤ 1000V 22A Ω 390mΩ 250ns N-Channel Enhancement Mode Avalanche Rated ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

Contextual Info: Power MOSFET VDSS ID25 IXTX24N100 RDS on N-Channel Enhancement Mode Avalanche Rated = = ≤ 1000V 24A Ω 400mΩ PLUS247 Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1000 V VGSS Continuous ±20 V VGSM Transient

IXTX24N100

Abstract: PLUS247 J 115 mosfet
Contextual Info: Power MOSFET IXTX24N100 VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = = ≤ 1000V 24A Ω 400mΩ PLUS247 (IXTX) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1000 V VGSS Continuous

IXTX24N100

Abstract: PLUS247 24N100
Contextual Info: Power MOSFET IXTX24N100 VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = = ≤ 1000V 24A Ω 400mΩ PLUS247 Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1000 V VGSS Continuous ±20 V VGSM Transient

IXFX24N100

Abstract: IXFK24N100 PLUS247
Contextual Info: IXFK24N100 IXFX24N100 HiPerFETTM Power MOSFETs VDSS ID25 = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrisic Diode 1000V 24A Ω 390mΩ 250ns TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V

Contextual Info: HiPerFETTM Power MOSFETs VDSS ID25 IXFK24N100 IXFX24N100 = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrisic Diode 1000V 24A Ω 390mΩ 250ns TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V

TP0604N2

Abstract: TP0602N3 TP0602N2 TP0602 TP0604 p-channel DMOS Switching Silicon Power P-channel Fast Data Book TP0604N3 TP0604WG SOW-20
Contextual Info: TP0602 TP0604 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / BVDGS RDS ON (max) ID(ON) (min) VGS(th) (max) TO-39 TO-92 SOW-20* DICE† -20V 2.0Ω -2.0A -2.4V TP0602N2 TP0602N3 — TP0602ND

TP0602N3

Abstract: TR0602 TP0604N2
Contextual Info: ^Supertex inc. TP0602 T P 06 04 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Num ber / Package B V oss / R d S ON B V dgs (m ax) (min) (max) TO-39 TO-92 SOW-20* DICE* -20V 2.0£2 -2.0A -2.4V TP0602N2 TP0602N3 —

FAG 32 diode

Abstract: FAG 50 diode diode FAG 50 FAG40 irfag42 1000V power MOSFET reliability report G-263
Contextual Info: HE 0 I 4055455 GOGTZÖL fl | INTERNATIONAL Data Sheet No. PD-9.575A RECTIFIER INTERNATIONAL RECTIFIER IO R T -3 9 -1 3 REPETITIVE AVALANCHE AND dv/dt RATED IRFAG40 IRFAG4S HEXFET TRANSISTORS N-CHANNEL Product Summary 1000 Volt, 3.5 Ohm HEXFET TO-204AA TO-3 Hermetic Package

SPB80N03L

Abstract: tc 785 siemens SPP80N03L Q67040-S4735-A3
Contextual Info: SPP80N03L SPB80N03L Preliminary data SIPMOS  Power Transistor • N-Channel • Enhancement mode • Avalanche rated • Logic Level • dv/dt rated • 175°C operating temperature Type VDS ID SPP80N03L 30 V 80 A SPB80N03L RDS on @ VGS 0.008 Ω VGS = 4.5 V