TC 368 Search Results

74HC367A

Contextual Info: /TC74HC367AP/AF/AFN 'JTC74HC368AP/AF/AFN H E X BUS B U F F E R TC74H C 367A P/A F/A FN TC 74H C 368A P/A F/A FN The TC 74H C 367A CM OS 3 -ST A T E and N O N —I N V E R T E D I N V E R T E D _ TC 74HC 368A a re high speed B U S B U F F E R s fab lica ted w ith silicon

Contextual Info: Die Datasheet GA05JT06-CAL Normally – OFF Silicon Carbide Junction Transistor VDS RDS ON ID (Tc = 25°C) hFE (Tc = 25°C) = = = = 600 V 240 mΩ 15 A 110 Features •        250°C maximum operating temperature Gate Oxide Free SiC switch

Contextual Info: I I TC74HC367AP/AF/AFN TC74HC368AP/AF/AFN H E X BUS B U F F E R TC 74H C 367A P /A F /A FN TC 74 H C368A P / A F / A F N The TC 74 H C 367 A and N O N —I N V E R T E D I N V E R T E D _ TC74HC368A a re h igh speed C M O S 3 - S T A T E B U S B U F F E R s fa b lica te d w ith silico n

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M C 14511B B C D -T o -S e v e n S e g m e n t L a tc h /D e c o d e r/D riv e r L SUFFIX CERAM IC CASE 620 T he M C 1 4 5 1 1 B B C D - to - s e v e n s e g m e n t la tc h /d e c o d e r/d riv e r is constructed with complementary MOS CMOS enhancement mode devices

4514BP

Abstract: SLO 365 R 3S74
Contextual Info: SIUCQNDM ? N Q U T H ^RATED TC4514BP TC4515BP circuit TC4514BP. TC4515BP 4-BIT LATCH/4-T0-16 LINE DECODER (Output Acti 4-BIT LATCH/4-T0-16 LINE DECODER (Output A c ti TC 45 14 BP and TC 45 15 BP are d e co de rs w h i c h convert 4 b i t b i n a r y i n p u t s i g n a l to h e x a d e c i m a l o u t p u t s i g n a l

2SD2528

Contextual Info: Power Transistors 2SD2528 Silicon NPN epitaxial planar type Unit: mm For power amplification with high forward current transfer ratio 9.9±0.3 3.0±0.5 2.9±0.2 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector to base voltage

Contextual Info: HIGH VALUE & HIGH VOLTAGE CYLINDRICAL RESISTORS RG SERIES - General Purpose RH SERIES - High Precision RP SERIES - Professional Grade Industry’s widest range of high value/ high voltage resistors1/8 ~ 20W, 1KΩ~ 1013Ω, 300V~ 90KV, TC’s to ±15ppm, ±0.05%~ 10%

600v 400a IGBT driver

Contextual Info: APTLGF300U120T Zero Voltage switching Single switch NPT IGBT Power Module VCES = 1200V IC = 300A @ Tc = 80°C Application • Wide output range converters • Induction heating • X-Ray power supplies • ZVS-PWM Uninterruptible Power Supplies • High frequency, high density, high efficiency

LT 8834

Abstract: LT 7232 TS-3401
Contextual Info: "a l p h a n u m e r i c in d e x L B L -9 3 1 6 G . L BL -9429G 5-11 5-14 L T C - 2 7 2 3 Y . 10-21 L TC -3710G 14-3

BUZ60

Contextual Info: SIEMENS BUZ 60 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 60 Vds 400 V to 5.5 A Rosien 1Q Package Ordering Code TO-220 AB C67078-S1312-A2 Maximum Ratings Parameter Symbol Continuous drain current Values b Tc = 36 °C

NTE5953

Abstract: NTE5942 NTE5944 NTE5948 NTE5952 NTE5945 NTE5940 NTE5941 NTE5943 NTE5946
Contextual Info: NTE5940 thru NTE5953 Silicon Power Rectifier Diode, 15 Amp Description and Features: D Low Thermal Impedance D High Case Temperarure D Excellent Reliability D Available in Anode–to–Case or Cathode–to–Case Style Ratings and Characteristics: Average Forward Current TC = +150°C Max , IF(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A

Contextual Info: Alpha Wire | 711 Lidgerwood Avenue, Elizabeth, NJ 07207 Tel: 1-800-52 ALPHA 25742 , Web: www.alphawire.com Customer Specification PART NO. 79026 Construction Diameters (In) 1) Component 1 18 X 1 COND a) Conductor 16 (26/30) AWG TC 0.059 b) Insulation 0.011" Wall, Nom. Modified Polyphenylene

net eN8

Abstract: TDN01 crpa 8B10B P802 TLK3118 XGXS quad video processor
Contextual Info: TLK3118 Redundant XAUI Transceiver www.ti.com SLLS628C – DECEMBER 2004 – REVISED APRIL 2007 • • • • • • • • • • • Technology Package: Small Footprint 21x21mm, 400-Ball, Fine Pitch 1mm PBGA TLK3118 TDP/N[3:0]0 TCLK TD(31.0) TC(3.0)

K297

Abstract: net eN8 TDN01
Contextual Info: TLK3118 Redundant XAUI Transceiver www.ti.com SLLS628C – DECEMBER 2004 – REVISED APRIL 2007 • • • • • • • • • • • Technology Package: Small Footprint 21x21mm, 400-Ball, Fine Pitch 1mm PBGA TLK3118 TDP/N[3:0]0 TCLK TD(31.0) TC(3.0)

499G

Abstract: NEZ4450-15D NEZ4450-4D NEZ4450-4DL NEZ4450-8D
Contextual Info: NEZ4450-15D NEZ4450-15DL NEZ4450-8D NEZ4450-8DL NEZ4450-4D NEZ4450-4DL C-BAND INTERNALLY MATCHED POWER GaAs MESFET FEATURES • • • • • ELECTRICAL CHARACTERISTICS TC PART NUMBER P1DB ηADD IDS GL IM3 -XDL Option Only IDSS VP BVDGO gm RTH (CH-C ∆T (CH-C)

Fujitsu FLM 150

Abstract: 5964-6D
Contextual Info: FLM 5964-6D Internally Matched Power CiaAs I 'E l s ABSOLUTE MAXIMUM RATING Ambient Temperature Ta=25°C Item Symbol Condition Rating Unit Drain-Source Voltage vds 15 V Gate-Source Voltage vgs -5 V 31.2 w °c Total Power Dissipation Tc = 25°C pt Storage Temperature

Contextual Info: TLK3118 Redundant XAUI Transceiver www.ti.com SLLS628C – DECEMBER 2004 – REVISED APRIL 2007 • • • • • • • • • • • Technology Package: Small Footprint 21x21mm, 400-Ball, Fine Pitch 1mm PBGA TLK3118 TDP/N[3:0]0 TCLK TD(31.0) TC(3.0)

net eN8

Abstract: 8B10B P802 TLK3118 10gb TX drive K283
Contextual Info: TLK3118 Redundant XAUI Transceiver www.ti.com SLLS628C – DECEMBER 2004 – REVISED APRIL 2007 • • • • • • • • • • • Technology Package: Small Footprint 21x21mm, 400-Ball, Fine Pitch 1mm PBGA TLK3118 TDP/N[3:0]0 TCLK TD(31.0) TC(3.0)

SMW60N06-18

Abstract: smw60n06
Contextual Info: Tem ic SMW60N06-18 Siliconix N-Channel Enhancement-Mode Transistor, 18-mQ rDS on Product Summary V(BR)DSS (V ) r DS(on) ( Q ) ID (A) 60 0.018 60 TO-247AD Ô s N-Channel M OSFET Absolute Maximum Ratings (Tc = 25°C Unless Otherwise Noted) Symbol Limit Drain-Source Voltage

Contextual Info: TLK3118 Redundant XAUI Transceiver www.ti.com • • • • • • • • • • • Fabricated in Advanced 130-nm CMOS Technology Package: Small Footprint 21x21mm, 400-Ball, Fine Pitch 1mm PBGA TLK3118 TDP/N[3:0]0 TCLK TD(31.0) TC(3.0) RCLK RD(31.0)

Contextual Info: HIGH VALUE & HIGH VOLTAGE CY LINDRICAL RESISTORS RG SERIES - General Purpose RH SERIES - High Precision RP SERIES - Professional Grade Term.W is RoHS compliant & 260°C compatible RoHS Industry’s widest range of high value/ high voltage resistors1/8 ~ 20W, 1KΩ~ 1013Ω, 300V~ 90KV, TC’s to ±15ppm, ±0.05%~ 10%

irf530

Abstract: transistor sec 623
Contextual Info: Tem ic IRF530 Siliconix N-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) 100 r DS(on) (Q) 0.18 I d (A) 14 TO -220AB o DRAIN connected to TAB Ô GD S s lop View N-Channel MOSFET Absolute Maximum Ratings (Tc = 25 °C Unless Otherwise Noted)

TDP01/TDN01

Abstract: TDN21 XAUI 8B10B P802 TLK3118 c20d10
Contextual Info: TLK3118 Redundant XAUI Transceiver www.ti.com • • • • • • • • • • • Fabricated in Advanced 130-nm CMOS Technology Package: Small Footprint 21x21mm, 400-Ball, Fine Pitch 1mm PBGA TLK3118 TDP/N[3:0]0 TCLK TD(31.0) TC(3.0) RCLK RD(31.0)

Contextual Info: TLK3118 Redundant XAUI Transceiver www.ti.com • • • • • • • • • • • Fabricated in Advanced 130-nm CMOS Technology Package: Small Footprint 21x21mm, 400-Ball, Fine Pitch 1mm PBGA TLK3118 TDP/N[3:0]0 TCLK TD(31.0) TC(3.0) RCLK RD(31.0)