TC 2206 Search Results

UL2493

Abstract: UL2919 UL2464 6251-10 70005701 78414
Contextual Info: 524-2012:QuarkCatalogTempNew 8/23/12 10:51 AM Page 524 TEST & MEASUREMENT 3 Multipair Computer Cables Low Capacitance Cables for EIA RS-232 and EIA RS-422 Applications RoHS Stranded Tinned Copper TC conductors, polypropylene insulated, twisted pairs. Overall 100% Beldfoil + 90% TC braid shield. 28 AWG stranded TC drain wire.

THERMISTORS nsp 037

Abstract: Thyristor TAG 9118 ICA 0726 0148 Transformer a1273 y k transistor AM97C11CN transistor SK A1104 PM7A2Q B8708 bzy79 yh 5032
Contextual Info: INDEX OF COMPONENTS A Section/Page No. A.C. Adaptor. Adaptor Kits BNC e tc . Adhesive Tapes. Adhesives, Various. Aerosols.

Contextual Info: Advanced Technical Information FBE 22-06N1 VRRM = 600 V Fast Single Phase Rectifier Bridge ID AV M = 20 A trr = 80 ns in ISOPLUS i4-PACTM 1 5 Input Rectifier Bridge Conditions Maximum Ratings VRRM 600 V IFAV ID(AV)M IFSM TC = 90°C; sine 180° (per diode)

Contextual Info: VUE 22-06NO7 ECO-PAC TM Three Phase Rectifier Bridge IdAV = 34 A VRRM = 600 V trr = 35 ns with Fast Recovery Epitaxial Diodes FRED Preliminary Data VRSM VRRM V V 600 600 D Typ VUE 22-06NO7 A H N K Symbol Conditions IdAV ① IdAVM TC = 85°C, module 34 90

22-06N1

Abstract: FAST RECOVERY SINGLE-PHASE BRIDGE RECTIFIER fast recovery epitaxial diode Bridge isoplus ixys mounting
Contextual Info: Advanced Technical Information FBE 22-06N1 VRRM = 600 V Fast Single Phase Rectifier Bridge ID AV M = 20 A trr = 80 ns in ISOPLUS i4-PACTM 1 5 Input Rectifier Bridge Symbol Features Conditions Maximum Ratings VRRM 600 V IFAV ID(AV)M IFSM TC = 90°C; sine 180° (per diode)

Contextual Info: VUE 22-06NO7 ECO-PAC TM Three Phase Rectifier Bridge IdAV = 34 A VRRM = 600 V trr = 35 ns with Fast Recovery Epitaxial Diodes FRED VRSM VRRM V V 600 600 D Typ VUE 22-06NO7 A H N K Symbol Conditions IdAV ① IdAVM TC = 85°C, module 34 90 A A IFSM TVJ = 45°C

Contextual Info: VUE 22-06NO7 ECO-PAC TM Three Phase Rectifier Bridge IdAV = 34 A VRRM = 600 V trr = 35 ns with Fast Recovery Epitaxial Diodes FRED VRSM VRRM V V 600 600 D Typ VUE 22-06NO7 A H N K Symbol Conditions IdAV ① IdAVM TC = 85°C, module 34 90 A A IFSM TVJ = 45°C

Contextual Info: MITSUBISHI RF POWER MODULE bSM'ìflB'ì 0D173D4 OTl M57797L 400-430MHZ, 12.5V, 7W, FM PORTABLE RADIO hn :R F INPUT V C C 1 : 1st. DC SUPPLY @VBB : BASE BIAS SUPPLY ® V C C 2 : 2nd. DC SUPPLY ®P0 : RF O UTPUT ® G N D : FIN ABSOLUTE MAXIMUM RATINGS Tc = 25 D unless otherwise noted

Contextual Info: FBE 22-06N1 VRRM = 600 V Id AV M = 20 A trr = 80 ns Fast Single Phase Rectifier Bridge in ISOPLUS i4-PAC 1 4 5 1 5 Pin฀3฀=฀not฀connected 2 Features Rectifier Bridge Symbol Maximum Ratings Conditions VRRM 600 V IdAV Id(AV)M TC฀=฀90°C,฀sine฀180°฀(per฀diode)

"rectifier bridge"

Abstract: FAST RECOVERY SINGLE-PHASE BRIDGE RECTIFIER 4 pin bridge rectifier package
Contextual Info: FBE 22-06N1 Fast Single Phase Rectifier Bridge VRRM = 600 V Id AV M = 20 A trr = 80 ns in ISOPLUS i4-PAC 1 4 5 1 5 Pin 3 = not connected 2 Features Rectifier Bridge Symbol Maximum Ratings Conditions VRRM 600 V IdAV Id(AV)M TC = 90°C, sine 180° (per diode)

20-20N01

Abstract: 7512N ixys application note 10MSA 26-06N07 26-12N07 100-06N07 30-20N01
Contextual Info: Rectifier Bridges with Fast Diodes Rectifier Bridges with Superfast Recovery Diodes 1-phase, B2U V RRM ► New V *dAV @ Tc ^FSM A °C 45°C 10 ms A V to rr V m p ^V JM ^ th J C Ih JH typ Package style per Chip per Chip K/W K/W Fig. No. Type °C 150 50 110

Contextual Info: f l 1' 1 i 'lies APPLICATION AND FEATURES 1. S id e and end s ta c k a b le 2. N o tc h e s fo r easy 3. V a ria b le pin le n g th , 4. S ta n d o ffs fa c ilita te 5. M a te w ith M ini such as on SPECIFICATIONS un broke n C u rre n t ed ges . b re a k a b le .

AV2018

Abstract: XK2206
Contextual Info: FMXK-2206S SANKEN ELECTRIC CO., LTD. 1. Scope The present specifications shall apply to FMXK-2206S. 2. Outline High Frequency Rectification Type Silicon Diode Structure Resin Molded Applications High Frequency Rectification,etc 3. Flammability UL94V-0 Equivalent

Diode N2206

Abstract: FMN-2206S fmn2206s FMN 2206S
Contextual Info: SANKEN ELECTRIC CO., LTD. FMN-2206S 1. Scope The present specifications shall apply to an FMN-2206S 2. Outline Type Silicon Diode Structure Resin Molded Applications High Frequency Rectification 071029 Flammability : UL94V-0 Equivalent 1／5 61426-01 SANKEN ELECTRIC CO., LTD.

XS2206

Abstract: FMXS2206S sanken
Contextual Info: http://www.sanken-ele.co.jp SANKEN ELECTRIC FMXS-2206S Aug, 2011 Fast Recovery Diode Package General Description This product is FRD that has excellent high speed performance. It achieved a balance between high speed at high temperature operates and low-VF.

Contextual Info: http://www.sanken-ele.co.jp SANKEN ELECTRIC FMW-2206 Mar. 2008 Schottky Barrier Rectifier General Description Package FMW-2206 is a Schottky Barrier Diode, and has achieved low TO220F 3Pin leakage current and low VF by selecting the best barrier metal. Applications

fmw-2206

Abstract: w 2206 schottky T T 2206 3pin -10-DC- IR sanken power transistor 615t
Contextual Info: http://www.sanken-ele.co.jp SANKEN ELECTRIC FMW-2206 Mar. 2008 Schottky Barrier Rectifier General Description Package FMW-2206 is a Schottky Barrier Diode, and has achieved low TO220F 3Pin leakage current and low VF by selecting the best barrier metal. Applications

75t1

Abstract: UPB2206 NEC AMERICA
Contextual Info: NEC B IP O L A R D IG IT A L IN T E G R A T E D C IR C U IT ¿¿PB ELECTRO N DEVICE 2 5 6 -B IT B IP O L A R TTL 2206D RAM D E S C R IP T IO N The NEC /¿PB2206D integrated circuits are high-speed O pen-Collector T T L interface, 2 5 6 -b it Random A ccess Memories.

Contextual Info: 100353 Low Power 8-Bit Register General Description Features The 100353 contains eight D-type edge triggered, master/ slave flip-flops with individual inputs Dn , true outputs (Qn), a clock input (CP), and a common clock enable pin (CEN). Data enters the master when CP is LOW and transfers to

Contextual Info: INCH-POUND MIL-M-38510/300E 7 JANUARY 2003_ SUPERSEDING MIL-M-38510/300D 15 JULY 1987 MILITARY SPECIFICATION MICROCIRCUITS, DIGITAL, BIPOLAR LOW-POWER SCHOTTKY TTL, AND GATES, MONOLITHIC SILICON Inactive for new design after 18 April 1997. This specification is approved for use by all Departments

TA8172AF

Abstract: TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P
Contextual Info: Index of Type Number Type Number 015Z10 015Z11 015Z12 015Z2.0 015Z2.0-12 015Z2.2 015Z2.4 015Z2.7 015Z3.0 015Z3.3 015Z3.6 015Z3.9 015Z4.3 015Z4.7 015Z5.1 015Z5.6 015Z6.2 015Z6.8 015Z7.5 015Z8.2 015Z9.1 02CZ10 02CZ11 0 2 C Z 12 0 2 C Z 13 0 2 C Z 15 0 2 C Z 16

D1 3009

Contextual Info: INCH-POUND MIL-M-38510/309E 10 April 2003 _ SUPERSEDING MIL-M-38510/309D 21 June 1985 MILITARY SPECIFICATION MICROCIRCUITS, DIGITAL, BIPOLAR, LOW-POWER SCHOTTKY TTL, DATA SELECTOR/MULTIPLEXER WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON Inactive for new design after 18 April 1997.

21R1S

Contextual Info: INCH-POUND MIL-M-38510/316E 14 July 2003 _ SUPERSEDING MIL-M-38510/316D 10 December 1987 MILITARY SPECIFICATION MICROCIRCUITS, DIGITAL, BIPOLAR, LOW-POWER SCHOTTKY TTL, CASCADABLE LATCHES, MONOLITHIC SILICON Inactive for new design after 18 April 1997. This specification is approved for use by all Departments

319C

Abstract: gdfp2-f16 national
Contextual Info: INCH-POUND MIL-M-38510/319C 14 July 2003 _ SUPERSEDING MIL-M-38510/319B 4 March 1985 MILITARY SPECIFICATION MICROCIRCUITS, DIGITAL, LOW-POWER SCHOTTKY TTL, 4 BY 4 REGISTER FILE, CASCADABLE, MONOLITHIC SILICON Inactive for new design after 18 April 1997. This specification is approved for use by all Departments