TC 2006 Search Results

Contextual Info: IXFF 24N100 HiPerFETTM Power MOSFET in High Voltage ISOPLUS i4-PACTM ID25 = 22 A VDSS = 1000 V Ω RDSon = 390 mΩ 5 1 1 5 2 Features Maximum Ratings VDSS TVJ = 25°C to 150°C 1000 V VGS TC = 25°C TC = 90°C IF25 IF90 diode TC = 25°C (diode) TC = 90°C

EFS 600

Abstract: EN60926 EFS600 arlen transistor 38W KM28552 4-125w preheat CS95193V
Contextual Info: Arlen EFA Page 8 of 11 EFS 600 Pulsestarters Applications: 4-125w linear lamps T8/T12 16-38w TC-DD, 18-26w TC-DE/TE, 18-36w TC-L, 22-60w circular and U-tubes Operating Voltage: 200-260v AC 50/60 Hz Canister Material: Polycarbonate UV stabilised and V0 rated

Contextual Info: IXFF 24N100 HiPerFETTM Power MOSFET in High Voltage ISOPLUS i4-PACTM ID25 = 22 A VDSS = 1000 V Ω RDSon = 390 mΩ 5 1 1 5 2 Features MOSFET Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS ID25 ID90 TC = 25°C TC = 90°C IF25 IF90 diode TC = 25°C

AT224

Abstract: AT224-3
Contextual Info: PRODUCT CHANGE NOTICE PCN Form D4-E000-73 PCN #06-003 NOTIFICATION DATE: July 26, 2006 MODELS AFFECTED: TC Gold Plated Series of RoHS Transformers EXTENT OF CHANGE: Enable use of alternate substrate on TC gold plated series of RoHS transformers EFFECT OF CHANGE:

1502R

Abstract: Belden STP
Contextual Info: 1502R Paired - Multimedia Control Cable For more information please call 1-800-Belden1 See Put-ups and Colors Description: 22 AWG stranded 7x30 TC conductors, FPE insulation (data), STP (Data) w/Beldfoil , TC drain wire, 18 AWG (16x30) TC conductors, unshielded (power) pair, F-R PVC insulation (power), F-R PVC Jacket (Available in Black, White, or Aqua)

FPR 73

Abstract: 9973
Contextual Info: Temperature dependence and TC TEMPERATURE DEPENDENCE AND TC OF THE RESISTOR The absolute ohmic value of a resistor is temperature-dependent. In today’s modern fields of measurement and electronics, particularly in such industries as heating and ventilation

Contextual Info: C B A REV. 0.748 19 0.08 R2 0.010 R0.25 MODIFICATION. DATE DRN 01 PRODUCTION RELEASE 13/ 03/ 06 TC 02 ECR 2006-079 CO2010269 CO2010273 CO2010755 08/ 05/ 06 01/ 07/ 08 03/ 07/ 08 30/ 07/ 09 TC SF SF OW 03 04 05 1 Dim 'A' F E D 0.394 R10 2 0.00 0.051 - 0.01

RMS-321

Abstract: bumper date sheet of B.A RMS-32
Contextual Info: C B A F E D REV. MODIFICATION. DATE DRN 01 PRODUCTION RELEASE 13/03/06 TC 02 ECR 2006-079 08/05/06 TC 1 1 0.748 19 Dim 'A' 0.010 0.25 0.08 R2 2 0.394 10 0.00 0.051 - 0.01 1.30 - 0.15 3 +0.01 0.315 - 0.01 +0.30 8 - 0.30 0.138 3.50 0.394 10 +0.01 0.220 0.00

D2406 transistor

Abstract: 2SD2406 D2406
Contextual Info: 2SD2406 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2406 Power Amplifier Applications Unit: mm • High power dissipation: PC = 25 W Tc = 25°C • Good hFE linearity Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage

D2406 transistor

Contextual Info: 2SD2406 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2406 Power Amplifier Applications Unit: mm • High power dissipation: PC = 25 W Tc = 25°C • Good hFE linearity Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage

U1000

Abstract: 010U500
Contextual Info: 8412 Non-Paired - Two-Conductor, Low-Impedance Cable For more information please call 1-800-Belden1 See Put-ups and Colors Description: 20 AWG stranded 26x34 high-conductivity TC conductors, EPDM rubber insulation, rayon braid, TC braid shield (85% coverage), cotton

KIC7SZ04FU

Abstract: marking TC
Contextual Info: SEMICONDUCTOR KIC7SZ04FU MARKING SPECIFICATION USV PACKAGE 1. Marking method Laser Marking TC 1 No. C 6 2. Marking 2 Item Marking Description Device Mark TC KIC7SZ04FU * Lot No. C6 2008. 36th Week [C:1st Character, 6:2nd Character] Note * Lot No. marking method

Contextual Info: C B A REV. 2 DRN PRODUCTION RELEASE 13/03/06 TC 02 ECR 2006-079 CO2010269 08/05/06 01/07/08 TC SF 1 0.394 R10 0.00 0.051 - 0.01 1.30 - 0.15 +0.01 0.315 - 0.01 +0.30 8 - 0.30 0.138 3.50 0.394 10 +0.01 0.220 0.00 +0.20 5.60 0 2 3 3 INFORMATION CONTAINED IN THIS DOCUMENT IS CONFIDENTIAL TO

Contextual Info: A C B 1 2.20 55.8 REF F E D 2.50 63.4 REF REV. MODIFICATION. DATE DRN 01 02 03 04 05 PRODUCTION RELEASE ECN 2006-258 CO2010317 CO2010432 CO2010751 08/ 08/ 06 06/ 12/ 06 11/ 08/ 08 09/ 10/ 08 29/ 07/ 09 TC TC SF SF OW 1 0.09 2.4 0.31 8 0.11 2.83 REF 0.22 5.70 REF

U1000

Contextual Info: 1696A Paired - Single-Pair Cable For more information please call 1-800-Belden1 See Put-ups and Colors Description: 22 AWG stranded 7x30 TC conductors, Datalene insulation, twisted pair with fillers, overall Beldfoil® + TC braid shield (90% coverage), 24 AWG drain wire, PVC jacket.

2X121-0045B

Contextual Info: DSS 2x121-0045B Power Schottky Rectifier IFAV = 2x120 A VRRM = 45 V VF = 0.59 V VRSM VRRM SOT-227B, miniBLOC V V 45 45 Type DSS 2x121-0045B Symbol Conditions IFRMS IFAVM IFAVM TC = 100°C; rectangular, d = 0.5 TC = 100°C; rectangular, d = 0.5; per device

Contextual Info: DSS 2x81-0045B Power Schottky Rectifier IFAV = 2x80 A VRRM = 45 V VF = 0.63 V VRSM VRRM SOT-227B, miniBLOC V V 45 45 Type DSS 2x81-0045A Symbol Conditions Maximum Ratings IFRMS IFAVM IFAVM TC = 75°C; rectangular, d = 0.5 TC = 75°C; rectangular, d = 0.5; per device

IXYS DSS 2X61-0045A

Contextual Info: DSS 2x61-0045A Power Schottky Rectifier IFAV = 2x60 A VRRM = 45 V VF = 0.65 V VRSM VRRM SOT-227B, miniBLOC V V 45 45 Type DSS 2x61-0045A Symbol Conditions Maximum Ratings IFRMS IFAVM IFAVM TC = 105°C; rectangular, d = 0.5 TC = 105°C; rectangular, d = 0.5; per device

Contextual Info: DSS 2x101-015A Power Schottky Rectifier IFAV = 2x100 A VRRM = 150 V VF = 0.77 V VRSM VRRM V V miniBLOC, SOT-227 B 150 150 Type DSS 2x101-015A Symbol Conditions IFRMS IFAVM IFAVM TC = 110°C; rectangular, d = 0.5 TC = 110°C; rectangular, d = 0.5; per device

83704

Contextual Info: 83704 Non-Paired - Audio, Control and Instrumentation Cable For more information please call 1-800-Belden1 See Put-ups and Colors Related Documents : No. 2 and 2R ICEA .pdf Description: 16 AWG stranded (19x29) TC conductors, conductors cabled, plenum, FEP insulation, overall Beldfoil (100% coverage) + TC braid shield

IXEL40N400

Contextual Info: Advance Technical Information IXEL40N400 Very High Voltage IGBT Symbol Test Conditions VCES TJ = 25°C to 125°C VGES Continuous IC90 TC = 90°C ICM Limited by TJ PC TC = 25°C VCES IC90 VCE sat tfi(typ) Maximum Ratings 4000 V ±20 V 40 A 170 A 380 -40 . +125

Contextual Info: IXBF 9N160 G IC25 VCES VCE sat tf High Voltage BIMOSFETTM in High Voltage ISOPLUS i4-PACTM = 7A = 1600 V = 4.9 V = 70 ans Monolithic Bipolar MOS Transistor 1 5 Features IGBT Conditions Maximum Ratings VCES VGES TVJ = 25°C to 150°C IC25 IC90 TC = 25°C TC = 90°C

RTD PT-100

Abstract: cFP-2120 ITS-90 cFP-TC-12x cFP-TC-120 fp-rtd-122 777318-122 3 wire RTD
Contextual Info: Thermocouple and RTD Modules for Compact FieldPoint NI cFP-TC-120, NI cFP-TC-125, NI cFP-RTD-122, NI cFP-RTD-124 • 8 temperature inputs • Thermocouple or millivolt • 2-, 3-, or 4-wire RTD • Built-in signal conditioning between channels • 250 V common-mode isolation

Contextual Info: IXBF 9N160 G IC25 VCES VCE sat tf High Voltage BIMOSFETTM in High Voltage ISOPLUS i4-PACTM = 7A = 1600 V = 4.9 V = 70 ans Monolithic Bipolar MOS Transistor 1 5 Features IGBT Conditions Maximum Ratings VCES VGES TVJ = 25°C to 150°C IC25 IC90 TC = 25°C TC = 90°C