TBD INVERTER Search Results

EFD36

Abstract: EEFL efd-36 TR04111002 transformer 1mA TMS90203CS eefl inverter high power FERRITE TRANSFORMER
Contextual Info: TURNS RATIO: MECHANICAL DIMENSIONS: mm PRI:SEC:=TBD ELECTRICAL CHARACTERISTICS: at 25 ° C 71.0 Max 1) INDUCTANCE: L(9-10): TBD @1KHz,1V L(1,2,-7,8): TBD @1KHz,1V 2) DC RESISTANCE: DCR(9-10): TBD DCR(1,2,-7,8): TBD 3) HI-POT: PRI TO SEC: 1500Vac,1mA MAX @50Hz,1Sec

EEFL

Abstract: 6020h 6020H-2 ferrite core transformer ratio 5 inverter FERRITE TRANSFORMER design eefl inverter TMS90202CS EE-34
Contextual Info: TURNS RATIO: PRI:SEC:=TBD ELECTRICAL CHARACTERISTICS: at 25 ° C MECHANICAL DIMENSIONS: mm A:53.0 MAX 7 6 4 1) INDUCTANCE: L(8-7): TBD @1KHz,1V L(1,2,3-4,5,6): TBD @1KHz,1V 2) DC RESISTANCE: DCR(8-7): TBD DCR(1,2,3-4,5,6): TBD 3) HI-POT: PRI TO SEC: 1500Vac,1mA MAX @50Hz,1Sec

Contextual Info: IX150T06M-AG tentative Trench XPT IGBT Chip Type VCE [V] IC [A] IX150T06M-AG 650 300 Chip Size [mm] x [mm] 14.2 10.6 Package Ordering Code sawn on foil tbd unsawn wafer tbd in waffle pack tbd Features / Advantages: Applications: ● Easy paralleling due to the positive temperature

Contextual Info: IX112T06M-AG tentative Trench XPT IGBT Chip Type VCE [V] IC [A] IX112T06M-AG 650 200 Chip Size [mm] x [mm] 10.6 10.6 Package Ordering Code sawn on foil tbd unsawn wafer tbd in waffle pack tbd Features / Advantages: Applications: ● Easy paralleling due to the positive temperature

Contextual Info: 600 V, TBD A, IGBT FGD633 Preliminary Features Package  Low Saturation Voltage  High Speed Switching  With Integrated Low VF Fast Recovery Diode  RoHS Compliant TO-3PF-3L  VCE - 600 V  IC-TBD A TC = 100 °C

Contextual Info: APPROVED PD - TBD IRFP17N50L SMPS MOSFET HEXFET Power MOSFET Applications l Switch Mode Power Supply SMPS Zero Voltage Switching (ZVS) and High Frequency Circuit Uninterruptible Power Supply High Speed Power Switching PWM Inverters l l l l VDSS 500V RDS(on) typ.

VRF2933FL

Abstract: VRF164FL ARF463AP1 Non - Isolated Buck, application DRF1301
Contextual Info: Power Products MICROSEMI POWER PORTFOLIOPortfolio 2014-2015 Power Products New image here TBD Power Semiconductors Power Modules RF Power MOSFETs Power Matters. About Microsemi Microsemi Corporation Nasdaq: MSCC offers a comprehensive portfolio of semiconductor and system

mosfet ms 1307

Abstract: D793 IRF7946TRPBF BLDC motor drive
Contextual Info: APPROVED NOT RELEASED PD - TBD StrongIRFET™ IRF7946PbF Applications l l l l l l l l l DirectFET Power MOSFET Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications

ASJD1200R045

Abstract: SiC JFET JFET semisouth silicon carbide JFET SJDP120R045 silicon carbide j-fet SEMISOUTH semisouth JFET VGS15V TO258
Contextual Info: ADVANCE INFORMATION SiC JFET ASJD1200R045 Normally-ON Trench Silicon Carbide Power JFET BVDS FEATURES: ProductSummary 1200 RDS ON max 0.045 V : ETS,typ TBD J Die Inside • Hermetic TO-258 Packaging • 200°C Maximum Operating Temperature (260oC Contact Factory)

SiC JFET

Abstract: JFET semisouth SJDP120R045 5A JFET ASJD1200R045 SEMISOUTH SJDP
Contextual Info: ADVANCED INFORMATION SiC JFET ASJD1200R045 Normally-ON Trench Silicon Carbide Power JFET BVDS FEATURES: ProductSummary 1200 RDS ON max 0.045 V : ETS,typ TBD J Die Inside • Hermetic TO-257 Packaging • 200°C Maximum Operating Temperature (260oC Contact Factory)

SEMISOUTH

Abstract: JFET semisouth SiC JFET semisouth JFET SJDP120R085
Contextual Info: ADVANCED INFORMATION SiC JFET ASJD1200R085 Normally-ON Trench Silicon Carbide Power JFET BVDS FEATURES: ProductSummary 1200 RDS ON max 0.085 V : ETS,typ TBD J Die Inside • Hermetic TO-257 Packaging • 200°C Maximum Operating Temperature (260oC Contact Factory)

IRHM7360SE

Abstract: JANSR2N7391
Contextual Info: Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.1224A REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR IRHM7360SE JANSR2N7391 [REF:MIL-PRF-195000/TBD] N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD Ω, (SEE) RAD HARD HEXFET

transistor cross reference

Abstract: MPT3N40 Westinghouse SCR handbook LT 8224 ZENER DIODE sje389 N9602N npn transistor RCA 467 TFK 7 segment displays PUT 2N6027 delco 466
Contextual Info: C K TBD DOLLY LIST LOGO LIST SAFETY & RELIABLTY TEK PN SYSTEM II DIGITAL IC's MEMORIES. MOS. CM OS.ECL. TTL MICROPROCESSOR SPECIAL FUNCTION IC's DIGITAL / LINEAR ARRAYS LINEAR IC'S (PURCH) TEK-MADE IC’s 3 IC's INDEX (COLORED PGS) INCL PRGMD. SCRND.ETC

Contextual Info: PACKAGE OPTION ADDENDUM www.ti.com 17-Oct-2005 PACKAGING INFORMATION Orderable Device Status 1 Package Type Package Drawing Pins Package Eco Plan (2) Qty Lead/Ball Finish MSL Peak Temp (3) SN5445J ACTIVE CDIP J 16 1 TBD Call TI Level-NC-NC-NC SN7445N ACTIVE

JM38510/01405BEA

Contextual Info: PACKAGE OPTION ADDENDUM www.ti.com 26-Sep-2005 PACKAGING INFORMATION Orderable Device Status 1 Package Type Package Drawing Pins Package Eco Plan (2) Qty Lead/Ball Finish MSL Peak Temp (3) 76005012A ACTIVE LCCC FK 20 1 TBD Call TI Level-NC-NC-NC 7600501EA

IRHM7360SE

Abstract: JANSR2N7391
Contextual Info: Provisional Data Sheet No. PD-9.1224A REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR IRHM7360SE JANSR2N7391 [REF:MIL-PRF-195000/TBD] N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD Ω, (SEE) RAD HARD HEXFET 400 Volt, 0.20Ω International Rectifier’s (SEE) RAD HARD technology

SN-74LS153N

Abstract: SN74LS153N SN74LS153N texas
Contextual Info: PACKAGE OPTION ADDENDUM www.ti.com 26-Sep-2005 PACKAGING INFORMATION Orderable Device Status 1 Package Type Package Drawing Pins Package Eco Plan (2) Qty Lead/Ball Finish MSL Peak Temp (3) 76011012A ACTIVE LCCC FK 20 1 TBD Call TI Level-NC-NC-NC 7601101EA

40-16NO1

Abstract: guo 40 40-08NO1 4012-N
Contextual Info: GUO 40 Advanced Technical Information Three Phase Rectifier Bridge VRSM V VRRM V Standard Types Ordering No. 900 800 GUO 40-08NO1 tbd 1300 1200 GUO 40-12NO1 504430 1700 1600 GUO 40-16NO1 504437 IDAVM = 40 A VRRM = 800-1600 V + ~ ~ ~ ~ ~ - ~ + IGBTs Symbol

ASJD1200R085

Abstract: SiC JFET SJDP120R085 JFET semisouth SEMISOUTH silicon carbide j-fet SJDP silicon carbide JFET JFET semisouth Semisouth, SJDP120R085
Contextual Info: ADVANCE INFORMATION SiC JFET ASJD1200R085 Normally-ON Trench Silicon Carbide Power JFET BVDS FEATURES: ProductSummary 1200 RDS ON max 0.085 V : ETS,typ TBD J Die Inside • Hermetic TO-258 Packaging • 200°C Maximum Operating Temperature (260oC Contact Factory)

SN74LS138P

Abstract: SN74LS138N
Contextual Info: PACKAGE OPTION ADDENDUM www.ti.com 26-Sep-2005 PACKAGING INFORMATION Orderable Device Status 1 Package Type Package Drawing Pins Package Eco Plan (2) Qty Lead/Ball Finish MSL Peak Temp (3) 76005012A ACTIVE LCCC FK 20 1 TBD Call TI Level-NC-NC-NC 7600501EA

4x4 matrix keypad

Abstract: 4x4 matrix keypad and diagram simple EZ328 4x4 matrix keypad block diagram interfacing keyboard matrix 4x4 matrix keypad and diagram 4x4 matrix keypad operation datasheet for 4x4 keyboard datasheet keypad 4x4 4x4 keypad scanning
Contextual Info: Freescale Semiconductor, Inc. Order this document by TBD DragonBall Operation Preliminary Application Note Minimum I/O to Matrix Keyboard with DragonBallTM EZ328 Freescale Semiconductor, Inc. INTRODUCTION This note describes an method of interfacing a matrix keyboard to EZ328 using minimum number of I/O ports.

Contextual Info: PACKAGE OPTION ADDENDUM www.ti.com 17-Oct-2005 PACKAGING INFORMATION Orderable Device Status 1 Package Type Package Drawing Pins Package Eco Plan (2) Qty Lead/Ball Finish MSL Peak Temp (3) 76002012A ACTIVE LCCC FK 20 1 TBD Call TI Level-NC-NC-NC 7600201EA

Contextual Info: DA01SLV20 Silicon Carbide Power Schottky Diode Silicon Carbide Power S chottky Diode V RRM= 2000 V lF = 1 A Qc = tbd nC Features • 2000 V Schottky Rectifier SOT-89 Package • 175 °C Maximum Operating Temperature • Zero Reverse Recovery Current • Positive temperature coefficient of Vf

823B

Abstract: DL201 motorola handbook 84 pin plcc ic base Reliability and quality handbook
Contextual Info: MOTOROLA SEMICONDUCTOR GENERAL INFORMATION Packaging & Case Information 84-Pin PLCC CASE 780A-01 ISSUE A FN SUFFIX 181-Pin PGA CASE 795A–02 ISSUE A HI SUFFIX 128-Pin QFP CASE 862A-02 ISSUE B DD SUFFIX 208-Pin QFP CASE 872A-01 ISSUE TBD DK SUFFIX 160-Pin QFP