TB3N100E Search Results

Contextual Info: MOTOROLA O rder this docum ent by M TB3N100E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet TB3N100E T M O S E-FET™ Motorola Preferred Device High Energy Power FET D2 p a k for Surface Mount TMOS POWER FET 3.0 AMPERES 1000 VOLTS N-Channel Enhancement-Mode Silicon Gate

0E-01

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r's D ata S h ee t TB3N100E TM O S E -FE T ™ High E nergy P o w er FET D2PAK for S u rfa c e M ount M otorola Preferred Device TM O S PO W ER FET 3.0 A M P E R E S 1000 VO LTS N-Channel Enhancement-Mode Silicon Gate

MSC1621

Abstract: Sj85a MRF9331 MMFT6661 2SD601R TLP655G cr708A 8C807-16 2SD601 R MBR931
Contextual Info: Alphanumeric Index and Cross Reference T he following table represents a cross-reference guide for surface mount packages which are m anufactured by Motorola. W here the M otorola part num ber differs from the industry part number, the M otorola device is a “form, fit and function" replacem ent for the