TB RBB Search Results

toshiba sb-500

Abstract: 2SC387A 387AG ISS simbol CC335 2sc 200mhz 2.T transistor planar
Contextual Info: ^j3yNPNx^5>^ì/j> by\^-tB^yv^9 2s c 387Ag SILICON NPN EPITAXIAL PLANAR TRANSISTOR i# te ffi O VHF » o uhf * 56 m m INDUSTRIAL APPLICATIONS Unit in mm o VHF Amplifier Applications o UHF Oscillator Applications h =? v y a y IS $. S i * ' ¡5 V ' o f T = 1000MHz Typ. )

2SC394

Abstract: TRANSISTOR 2SC394 2SC394-0 2SC394-R 100MHZ 251C HSE2 Produced by Perfect Crystal Device Technology 2SC394 transistor
Contextual Info: S/UD>NPNZm«0Bh5:VS>;*5KPCT75iW 2SC 394 1ILIC0N NPN DOUBLE DIFFUSED TRANSISTOR PCT PROCESS o mmwLmmm o High Frequency Amplifier Applications Unit in mm 0 5.8 MAX. 0 4 . 9 5 MAX. o PM Frequency Converter Applications 3E& => ^ * # * * ftzk S w ; ^Q 4 5 # o b = 9 “U

harris uart hd3-6402

Contextual Info: 33 HARRIS HD-6402 CMOS Universal Asynchronous Receiver Transmitter (UART January 1992 F ea tu res D es crip tio n • 8.0M H z O p e ra tin g F re q u e n c y (H D -6 4 0 2 B ) The H D -6 4 0 2 is a CMOS UART for interfacing com puters or microprocessors to an asynchronous serial data channel.

Contextual Info: DISTINCTIVE CHARACTERISTICS Supports High-speed Source Routing or Source Routing Transparent Bridging for up to eight ports • Automatically selects Source Routed or Transparent filtering routines based on Transceiver output data, and supplies the proper Match, Fail, or Flush signals to the

tb 2926

Abstract: Lb 598 d 2926S 2sc2926s
Contextual Info: h -7 > v Z. $ / T ransistors 2SC2926/2SC2926S 2SC 2926 2SC 2926S v ' j u > h Epitaxial Planar NPN Silicon Transistors Amplifier • fl- J K ^ jiH /D im e n s io n s U n it: mm 1) f T * ''iS t 'o 4 ± 0. ? 2.0 £ 0.2 2SC 2926S• 2SC 2926 f j = 1 . 1 G H z (Typ.)

Contextual Info: DH aHBSbOS 00Ö1403 241 SIEMENS PROFET BTS 432 D2 Smart Highside Power Switch Product Summary Features • • • • • • • • • • • • Load dump and reverse battery protection1 80 V'Load dump Clamp of negative voltage at output 58 Vbb- V 'o u t Avalanche Clamp

Contextual Info: SIEMENS ICs for Communications Segmentation and Reassembly Element SARE PXB 4110 Version 1.1 Preliminary Data Sheet 01.97 T 4 1 10 -X V 1 1-P 2-76 00 PXB 4110 Revision History: Current Version: 01.97 Previous Version: Preliminary Data Sheet 08.95 Version 1.1

RRQ2

Abstract: AD10 AD11 AD12 CRC-10 CRC-32 3583H "network interface cards"
Contextual Info: ICs for Communications Segmentation and Reassembly Element SARE PXB 4110 Version 1.1 Preliminary Data Sheet 01.97 T4110-XV11-P2-7600 PXB 4110 Revision History: Current Version: 01.97 Previous Version: Preliminary Data Sheet 08.95 Version 1.1 Page (in previous

2SD786

Abstract: 2SD786(S)
Contextual Info: h 7 > y X $ / T ransistors 2SD786 2SD786S 2SD786/2SD786S h 7 > y X ^ r I t l $ * ' > 7 J l ' 7 0U - j - M N P N i & rb b ,‘ :iS ;a i i [lli f f l / L o w rb b ’ L o w N o is e A m p . E p ita x ia l P la n a r N P N S ilic o n T r a n s is to r s • W B \H £@ /'D im e n s io n s U n it: mm

k 2059 TRANSISTOR

Abstract: TRANSISTOR BI 187 2T transistor surface mount pa 2030a 2SC4400 NPN S2e 1Ft TRANSISTOR
Contextual Info: SANY O S E M I C O N D U C T O R 2SE CORP D 7 cH ? 0 7 b 000 3^33 7 2SC4400 T -3 I-IS 'r;' ,>V ^ ’sx'*>V:- N P N Epitaxial Planar Silicon Transistor 2059 High-Frequency General-Purpose Amp Applications F eatu res . High power gain • High cutoff frequency

TRANSISTOR SMD CODE 339

Abstract: smd zener diode code n0
Contextual Info: SIEMENS PROFET BTS430K2 Smart Highside Power Switch Product Summary Features • • • • • • • • • • • Clamp of negative voltage at output 50 Vbb-V o u t Avalanche Clamp Short-circuit protection Vbb operation 4.5 . . 32 Current limitation

transistor fn 1016

Abstract: 2SA579 ZS 1032 2SA573 2SA756 2SC1004A
Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

Contextual Info: • fiE3SbOS 0DS1SE3 7Sfl SIEMENS PROFET BTS 442 D2 Smart Highside Power Switch Features • • • • • • • • Overload protection Current limitation Short-circuit protection Thermal shutdown Overvoltage protection including load dump Fast demagnetization of inductive loads

MBC236

Abstract: fdk ct 2T23 IEC134 S028 TDA8705 TDA8705T QUADRATURE CLOCK CONVERTER
Contextual Info: IN TE G R A TE D C IR C U ITS TDA8705 6-bit high-speed dual analog-to-digital converter Preliminary specification File under Integrated Circuits, IC02 November 1994 Philips Semiconductors P H ILIP S •I 7110051, DOÛSTZB t.35 ■ This Material Copyrighted By Its Respective Manufacturer

2N2646

Abstract: unijunction transistor 2N2646 transistor transistor 2N2646 2n2646 package
Contextual Info: 2N2646 SILICON PN UNIJUNCTION TRANSISTOR DESCRIPTION: The 2N2646 is a Unijunction Transistor Used in General Purpose Pulse, Timing, Sense and Trigger Applications. PACKAGE STYLE TO-18 MOD MAXIMUM RATINGS 2.0 A V o m Ic Pd is s (PULSED) SO V S00 mW @ Te = 25 0C

2N174

Contextual Info: TELEPHONE: 973 370-2022 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.SA 2N174 POWER TRANSISTOR GENERAL DESCRIPTION DIMENSIONS AND C O N N E C T I O N S The 2N174 is a PKP germanium power transistor designed for general use with a 28

Contextual Info: SILICON NPN EPITAXIAL TYPE TRANSISTOR 2SC2670 H IG H FREQUENCY AM PLIFIER APPLIC A TION S. CHARACTERISTIC SYMBOL U n i t in m m TEST CONDITION MIN. TYP. MAX. UNIT ÏCBO V CB = 35V, IE = 0 — — 0.1 /'A E m itter C ut-off C u rre n t lEBO V e b = 4V, I c = 0

2SC503

Abstract: 2SC504 2SA503 2SC503-2SC504 2SC503/Y
Contextual Info: TOSHIBA ÍDISCRETE/OPTO} ~5b » i j SOTTESO 0D0740T O y 2 S C 5 3 2 S C 5 4 SILICON NPN EPIT A X IA L TYPE PCT PROCESS , 5 òC 9097250 TOSHIBA CDISCRETE/OPTO) U7 4 U 9 HIGH FREQUENCY AMPLIFIER APPLICATIONS. o 7*-3 5 W $ ' Unit in mm 09.S9MAX. HIGH SPEED SWITCHING. APPLICATIONS.

free transistor and ic equivalent data

Abstract: free transistor Germanium Amplifier Circuit diagram germanium transistors NPN k2a2 GERMANIUM TRANSISTOR silicon bipolar transistor low noise amplifier Germanium Amplifier silicon germanium germanium NPN
Contextual Info: BASESTATIONS / WIRELESS INFRASTRUCTURE WIRELESS, RF, AND CABLE Mar 15, 2000 Silicon Germanium SiGe Technology Enhances Radio Front-End Performance This application note describes how silicon germanium enhances IC performance in RF applications. A Giacoleto model is used to analyze noise effects. Wider gain bandwidth of SiGe technology is

2SC503

Abstract: 2SC5031 2SC504 2SA503 2SA504
Contextual Info: TOSHIBA {DISCRETE/OPTO} 2SC503 2SC504, 9097250 TOSHIBA SILICON NPN EPITAX IA L TYPE PCT PROCESS 5 6C <D I S C R E T E / O P T O ) 07 4 U 9 Ü 7*"3 5 W 5 ' Unit in mm $9 . 3 9 Ì . 1 A X . HIGH FREQUENCY AMPLIFIER APPLICATIONS. HIGH SPEED SWITCHING. APPLICATIONS.

MC68341

Abstract: MC68681
Contextual Info: SECTION 7 SERIAL MODULE The MC68341 serial module is a dual universal asynchronous/synchronous receiver/transmitter that interfaces directly to the CPU32 processor via the intermodule bus IMB . The serial module, shown in Figure 7-1, consists of the following major

2SC398

Abstract: 2SC399 IC c399 TB9.C c3982 VAAC
Contextual Info: 25C398 2 s c 399 O fn ; vhp t ^ z;'J3yNPNI.£5>*^J> l7ls-t]&^yVZ5> SILICON NPN EPITAXIAL PLANAR TRANSISTOR ffl R FifiWffl ; 8SC398 2SC3 99 Unit in mm -ê- ffl; 2 Í& 8 M A X . o TV V H F Tuner A p p l ications RF Amplifier M ixer • M m m r - r 0 4 .9 5 M A X .

2SC4012

Contextual Info: h ~7 > y / Transistors 2SC3078M/2SC4012 2SC 3078M 2S C 4012 X tf$ * '> 7 J U 7 ° U - J - m N P N ' > U O > Amplifier Epitaxial Planar NPN Silicon Transistors • ÿJ-ffÿ\lii[l!l/Dimensions Unit : mm (W s = 7 .8 X 1 0 “ 5J) 2) lc = 1 0 0 m A £ * £ l ' o

AC128

Abstract: transistor AC128 AC128 transistor germanium transistor ac 128 valvo transistoren ac128 pnp germanium transistor ac128 ac128 germanium valvo valvo transistor
Contextual Info: NICHT FÜR N E U E N T W I C K L U N G E N AC 128 GERMANIUM - PNP - NF - TRANSISTOR für Endstufen, als Transistorpaar für Gegentakt-B-Schaltungen, in Verbindung mit AC 127 als komplementäres Paar Mechani sehe Daten: Gehäuse: Metall, JEDEC T0-1, 1 A 3 DIN 41 871