TB 595 Search Results

RF1196

Abstract: DS1103
Contextual Info: RF1196 RF1196SDM with Integrated B1 Duplexer: QB GSM, TB UMTS SDM WITH INTEGRATED B1 DUPLEXER: QB GSM, TB UMTS Package: Module, 4.5mmx4.5mmx1.0 mm RF1196 GSM Rx1 GSM Rx2 Features        GSM Rx3 Very Low IL and High Isolation: GSM LB Tx: 1.1dB

band 1 duplexer

Abstract: RF1196 1085MHz umts duplexer LTE duplexer
Contextual Info: RF1196 RF1196SDM with Integrated B1 Duplexer: QB GSM, TB UMTS SDM WITH INTEGRATED B1 DUPLEXER: QB GSM, TB UMTS Package: Module, 4.5mmx4.5mmx1.0 mm RF1196 GSM Rx1 GSM Rx2 Features        GSM Rx3 Very Low IL and High Isolation: GSM LB Tx: 1.1dB

soli capacitors

Abstract: SOLI ELECTRONICS INDUSTRY 1017
Contextual Info: Axial Type Aluminum Electrolytic Capacitors TB Series : Bi - Polar Type 1. Features * Bi-polarized, suitable for crossover network of high-pitched and low-pitched sounds in high-fidelity sound systems. * Have excellent frequency characteristics * Low Leakage current and low dissipation factor.

ASTM F1249

Abstract: ASTM D2103 EIA-583 F1249 F-1249 MIL-D-3464 JEDEC J-STD-033b F1249-90 ESD S11.11 MIL-D-3464 1 unit size
Contextual Info: TECHNICAL BULLETIN TB-2031 Statshield Moisture Barrier Bags Application Instructions Made in the United States of America Construction Desco’s Statshield® Moisture Barrier Bags manufactured from a static dissipative metalized laminated film. The metal layer of the Desco’s

Contextual Info: Aluminum Electrolytic Capacitors TB CE02 Type Features • 85℃, 1000 hours assured • Bi-polarized, excellent high frequency response characteristic • Designed specifically for crossover network in Hi-Fi sound • Suitable for improving audio tone and speaker network

lelon

Abstract: r56 ce m series lelon
Contextual Info: IllUKÜt \ Aluminum Electrolytic Capacitors TB/TBL CE02 Type Features • 85°C, 1000 hours assured, • Bi-polarized, excellent high frequency response characteristic • Designed specifically for crossover network in Hi-Fi sound • Suitable for improving audio tone and speaker network

Contextual Info: DESCO INDUSTRIES INC. Technical Bulletin TB-7026 Statguard Low Residue Floor Stripper Application Instructions Made in the United States of America Figure 1. Statguard® Low Residue Floor Stripper Description Statguard® Low Residue Floor Stripper is a strong,

TB-3042

Abstract: TR-53 clothing FTMS-101C
Contextual Info: TECHNICAL BULLETIN TB-3042 Heavy Duty Cotton Poly ESD Smocks Installation and Maintenance Made in the United States of America in the garment are designed to maintain electrical continuity from panel to panel and from sleeve to sleeve in accordance with the ESD Association

Contextual Info: in tb l. 28F256A 256K 32K x 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 ju,s Typical Byte-Program — 0.5 Second Chip-Program ■ Command Register Architecture for Microprocessor/Microcontroller

SIEMENS 3 TB 40 12 - 0B

Abstract: TLE4285G
Contextual Info: SIEMENS • 8235b05 Low-Drop Voltage Regulator D D Tb?!! 252 TLE 4285G Target Data Sheet 1 Overview 1.1 • • • • • • • • Features Wide operation range: 6 V to 45 V Wide temperature range: - 40 °C to 150 °C Low quiescent current consumption: 80 nA

Contextual Info: m u rn s K PM100CVA120 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 In tB lH /T IO d M O d u lO Three Phase IGBT Inverter Output 100 Amperes/1200 Volts TERMINAL CODE 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14.

2N4211

Abstract: TO63 2N3237 2N3598 2N3599 2N3772 2N3773 2N5631 2N6259 2N6359
Contextual Info: DIODE TRANSISTOR CO INC fl4 DE 1 5640352 00G013Ö 3 ÿ*. J 3 - û DIODE TB<ar\J5J5TQR CO. INC. (201 686-0400 »Telex: 139-385 • Outside NY & N J area call TO LL F R E E 800-526-4581 FAX No. 201-575-5863 Device Type hFE VCEO Max(V) Mln/Max 2N3773 2N5629

TO63

Abstract: 2N3237 2N3598 2N3599 2N3772 2N3773 2N5631 2N6259 2N6359
Contextual Info: DIODE TRANSISTOR CO INC fl4 DE 1 5640352 00G013Ö 3 ÿ*. J 3 - û DIODE TB<ar\J5J5TQR CO. INC. (201 686-0400 »Telex: 139-385 • Outside NY & N J area call TO LL F R E E 800-526-4581 FAX No. 201-575-5863 Device Type hFE VCEO Max(V) Mln/Max 2N3773 2N5629

TB-595

Abstract: tb 595 scheme electronics transistor yb tb595 B2099
Contextual Info: TB-595+ N1 SMA F 10nF 12x06 IF OUT B20-14F13+ 1 1 B20-99-24-03+ IF OUT 2 B1 A1 B2 A2 B3 A3 GND 3 LE DUT VCC RF/IF DATA CLK B20-99-24-03+ 12 11 B1 A1 B2 A2 B3 A3 10 SMA F VCC VCO RF B20-14F13+ 4 SMA F VCC VCO IF VCC VCO RF 9 1 REF IN B20-14F13+ 1 5 REF IN GND

Contextual Info: an A M P com pany Hybrid Junction 20 - 300 MHz HH-105 V2.00 Features Functional Diagram • 0° - 1 8 0 ° H ybrid in TO -5 P a ck a g e • H igh ]so ]a tb n Guaranteed Specifications’ from 55 c to+85 °c Frequency Range 20-300 MHz Insertion Loss (Less Coupling)

da 601

Contextual Info: NQTÇ T his p rin t is th» property of and mtoo4<*s p ro p rietary designs of T < DUPONT CWPANT. No p art of tb* «»sign s*o«n on t h is p rin t «*y toe used in any *«y »itHout the p r it ten consent of DUPONT ELECTRONICS. Nee Cumberland. PA. PRODUCT NO

OPTi chipset 486

Abstract: 82C496 opti 486 82C497 opti 82c496 DATV opti 486 chipset
Contextual Info: V12 PRELIMINARY O PT ï'S D XB B 82C497 f> I*»; OPTi-DXBB PC/AT Chipset 82C497 PRELIMINARY 82C497 DATA BOOK Version 1.2 January 16,1992 PAGE 1 hλ g-l-l-1 CACHE READ HIT ' TÍ I TB • -I Ta h -3-2 CACH6 RCAO HIT Tt • Ta » TÄ I M « CACHfi N R I T E H X T „ |

Contextual Info: 7“ a n A M P company GaAs SPDT Reflective Switch DC - 3 GHz with TTL/CMOS Control Input SW10-0312 V4.00 CR-9 Features • HhtegialD river • Low DC P o w e rC o n su m p tb n • TTL an d CM O S Iip u tC o m p a t b J s • Surface M ou n tP ackage •

Contextual Info: an A M P company Digital Attenuator, 30 dB, 4 Bit DC - 2 GHz AT-232 V3.00 Features CR-6 • A ttenuation 2 dB Step s to 30 dB • Tem p e la tin e Stability ± 0 .1 8 dB fern -55°C to +85°C T y p ic a l • U Jb a Low D C Pow e r Consum p tb n 0.050 TYP

H20R

Abstract: M7 RECTIFIER
Contextual Info: TB L2/300 7004 J V_ RF POWER TRIODE QUICK REFERENCE DATA F requency MHz C te le g r. C an m od. v a (V) W0 (W) Va (V) W0 (W) 2500 2000 1750 1600 1300 475 460 405 350 155 2000 1600 1400 1280 1040 505 370 275 225 107 175 300 470 600 900 In d u strial o sc illa to r c la s s C

Contextual Info: fax id: 1045 JtÊ Ë t Cí ^ W ' « Y 'T w v W J [ v w I • \ / I \/W % r H tb b -32K X 32 Synchronous-Pipelined Cache RAM Features Functional Description • Low (660 |^W sta n d b y p o w er (f=0, L versio n ) • S u p p o rts 7 5 -M H z bus fo r P en tium and Pow erPC ™

Contextual Info: an A M P com pany Matched GaAs SPST Switch DC - 3 GHz with TTL/CMOS Control Input SW-311 V3.00 Features CR-9 • In te g ra l Silicon D riv e r • U I r a Low Pow e r Consum p t b n • TTL and CM0 S In p u tC o m p a tb Je • F astS w i c h i i g S p e e d : 4 n s T y p i a l

MA87728-M01

Abstract: 10.525 ghz transceiver Gunn Oscillator WR90 TS 4140
Contextual Info: an A M P com pany Voltage Controlled Oscillator Transceiver 1 0 .5 2 5 G H z MA87728-M01 V3.00 Features In exp en siv e X -b a n d T ra n sc e iv e r C an b e FM M od u iated 10 mW T a n s a ì t e r P o w e r Sensitivity -95 d B c R ugged M e c h a n ic a lC o n s tru c tb n

Contextual Info: a n A M P co m p a n y Surface Mount PIN Diodes MA4P Series V 2.00 SOT-23 Features • Surface M o u n tP a c k a g e • Low C a p a c ita n c e D io d e s • Low Loss Sw itch D iod es • Low D is t o r tb n A tte n u a to r D io d e s • F a s t Sw itching D iod es