TANTALUM NITRIDE Search Results

Contextual Info: Page 16 Tantalum Nitride Film Chip Resistors SEI Type TTF Tantalum Nitride Element Precision Tolerances to ±0.02% Temperature Coefficients o f ±10ppm/°C Wide R-value Range Available in 1206, 0805 and 0603 Sizes PERFORMANCE CHARACTERISTICS TESTED PER MIL-STD-202

Contextual Info: Standard Networks/Tantalum on Silicon Standard Cell "SC" Series Features Electro-Films, Inc. has developed a series of tantalum/nitride on silicon resistor networks composed of standard cells that permit the production of networks in three standard configurations: isolated, series, and

TA 33

Contextual Info: TA 33 Vishay Sfernice Dual Value Chip Resistors, Center Tap FEATURES • Center tap feature • Resistor material: self-passivating Tantalum Nitride RoHS COMPLIANT • Silicon substrate for good power dissipation • Low cost Actual Size These tantalum chips combine excellent stability 0.07 %

Contextual Info: Standard Networks/Tantalum on Silicon Standard Cell “SC” Series Features Electro-Films, Inc. has developed a series of tantalum/nitride on silicon resistor networks composed of standard cells that permit the production of networks in three standard configurations: isolated, series, and

tantalum nitride

Abstract: TA 33 TA33-5K2F25KD0016
Contextual Info: TA 33 Vishay Sfernice Dual Value Chip Resistors, Center Tap FEATURES • Center tap feature • Resistor material: self-passivating Tantalum Nitride • Silicon substrate for good power dissipation • Low cost • Wirebondable Actual Size These tantalum chips combine excellent stability 0.07 %

TA 33

Abstract: TA33-5K2F25KD0016
Contextual Info: TA 33 Vishay Sfernice Dual Value Chip Resistors, Center Tap FEATURES • Center tap feature • Resistor material: self-passivating Tantalum Nitride RoHS COMPLIANT • Silicon substrate for good power dissipation • Low cost Actual Size These tantalum chips combine excellent stability 0.07 %

TA 33

Contextual Info: TA 33 Vishay Sfernice Dual Value Chip Resistors, Center Tap FEATURES • Center tap feature • Resistor material: self-passivating Tantalum Nitride RoHS COMPLIANT • Silicon substrate for good power dissipation • Low cost Actual Size These tantalum chips combine excellent stability 0.07 %

Contextual Info: Page 16 Tantalum Nitride Film Chip Resistors SEI Type TTF • • • • • Tantalum Nitride Element Precision Tolerances to ±0.02% Temperature Coefficients of ±10ppm/°C Wide R-value Range Available in 1206, 0805 and 0603 Sizes PERFORMANCE CHARACTERISTICS TESTED PER MIL-STD-202

Contextual Info: TA 33T Vishay Thin Film Dual Value, Chip Resistor Center Tap FEATURES • Center tap feature • Resistor material: self-passivating Tantalum Nitride • Silicon substrate for good power dissipation • Low cost Actual Size TYPICAL PERFORMANCE These tantalum chips combine excellent stability with great power handling

Contextual Info: N PT-N M S RESISTO RS & TERM INATIO NS S E R IE S N PR-N M S HIGH POWER TANTALUM NITRIDE FILM FEATURES: • Excellent Long Term Stability • Low Cost • Excellent Moisture Resistance GENERAL INFORMATION: These high power devices feature tantalum film resistors for improved

Contextual Info: Tantalum on Silicon Chip Resistors SFX: High Density/High Value The SFX series are single, high value, 1 megQ to 20 megQ, tantalum nitride on silicon chip resistors in a 40 x 40 mil. size. The capability for extremely fine-line etching on the smooth silicon surface allows the defin­

Contextual Info: Tantalum on Silicon Chip Resistors SFX: High Density/High Value General The SFX series are single, high value, 1 megQ to 20 megQ, tantalum nitride on silicon chip resistors in a 40 x 40 mil. size. The capability for extremely fine-line etching on the smooth silicon surface allows the defin­

Contextual Info: V i s h ay I n t e r t e c h n o l o g y, I n c . THIN FILM CHIP RESISTORS Moisture-Resistant Tantalum Nitride Resistive Film PTN Series Moisture-Resistant, Tantalum Nitride Precision Thin Film Surface-Mount Chip Resistor Key Benefits • • • • • •

Contextual Info: HIGH FREQUENCY CHIP RESISTORS AND TERMINATIONS SPECIFICATIONS: Substrate Material: Resistive Material: Termination Material: Frequency Range: Resistance Values: Alumina Tantalum nitride, thin film Platinum gold, thick film DC- 18 GHz 5OQ and 100Q standard

Contextual Info: T ANTALUM NITRIDE Thin Film Metallized Substrates, Customized Networks & Etched Circuits FEATURES METALLIZATION SPECIFICATIONS • • • • • • • • Circuit Side, Tantalum Nitride: High Film Adhesion Consistent Sheet Resistance Traceability Stability

Novel Passivation Ledge Monitor in an InGaP HBT Process

Abstract: AlGaAs resistivity
Contextual Info: Novel Passivation Ledge Monitor in an InGaP HBT Process Cristian Cismaru and Peter J. Zampardi Skyworks Solutions, Inc., 2427 Hillcrest Drive, Newbury Park, CA 91320 cristian.cismaru@skyworksinc.com, 805.480.4663 Keywords: HBT, InGaP ledge, capacitor, Tantalum Nitride

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Contextual Info: TERMINATIONS AND RESISTORS HIGH FREQUENCY CHIP RESISTORS AND TERMINATIONS Substrate Material: Resistive Material: Termination Material: Frequency Range: Resistance Values: Alumina Tantalum nitride, thin film Platinum gold, thick film DC - 18 GHz 50Q and 100Q standard

Contextual Info: TANTALUM NITRIDE ON SILICON NEW PRODUCT Bussed Circuit Thin Film Resistor Networks SCHEMATIC Bussed Resistor Network N 4 N/2 1 ELECTRICAL Standard Resistance Range, Ohms Operating Temperature Range Interlead Capacitance Insulation Resistance Maximum Operating Voltage

Contextual Info: TANTALUM NITRIDE ON SILICON NEW PRODUCT Isolated Circuit Thin Film Resistor Networks SCHEMATIC Isolated Resistor Elements N 4 1 N/2 ELECTRICAL Standard Resistance Range, Ohms Operating Temperature Range Interlead Capacitance Insulation Resistance Maximum Operating Voltage

Contextual Info: TA 33 www.vishay.com Vishay Sfernice Wirebondable Dual Value Thin Film Chip Resistor Networks, Center Tap FEATURES • Center tap feature • Resistor material: Self-passivating Tantalum nitride • Silicon substrate for good power dissipation • Wirebondable

Contextual Info: TANTALUM NITRIDE ON SILICON NEW PRODUCT Isolated Circuit Thin Film Resistor Networks SCHEMATIC ELECTRICAL Standard Resistance Range, Ohms 10 to 100K Operating Temperature Range -55°C to +125°C Interlead Capacitance <2pF Insulation Resistance >10,000 Megohms

Contextual Info: TA 33 www.vishay.com Vishay Sfernice Wirebondable Dual Value Thin Film Chip Resistor Networks, Center Tap FEATURES • Center tap feature • Resistor material: Self-passivating Tantalum nitride • Silicon substrate for good power dissipation • Wirebondable

Contextual Info: TaNFilm Small Outline Surface Mount Resistor Network IRC Advanced Film Division Ultra precision tantalum nitride resistance element on high purity alumina GUB Series Rugged, molded construction Compliant leads to compensate for thermal expansion and contractions

Contextual Info: TANFILM 8900 RESISTOR NETWORKS Self passivation layer and coating system provides environmental protection FLAT PACK Digitally marked ceramic lid to substrate per MIL-PRF-83401 Sputtered tantalum nitride resistance element, laser trimmed to value, tolerance