TAJD106 Search Results

Contextual Info: TAJ Series Standard Tantalum The TAJ standard series encompasses the five key sizes recognized by major OEMs throughout the world. The V case size has been added to the TAJ range to allow high CVs to be offered. The operational temperature is -55°C to +85°C rated voltage and up to +125°C

TANTALUM 47/35

Abstract: TAJV108M006 TAJB107M010 TAJD106 TAJV686M035
Contextual Info: TAJ Series Standard Tantalum The TAJ standard series encompasses the five key sizes recognized by major OEMs throughout the world. The V case size has been added to the TAJ range to allow high CVs to be offered. The operational temperature is -55°C to +85°C at rated voltage and up to +125°C

Contextual Info: THS6043EVM User’s Guide August 2002 High Performance Linear Products SLOU139 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries TI reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue

035TNJV

Abstract: TAJ Automotive
Contextual Info: TAJ Automotive Range Standard Tantalum - Automotive Product Range • General purpose SMT chip tantalum series • 5 case sizes available • CV range: 0.22-680 F / 6.3-50V LEAD-FREE COMPATIBLE COMPONENT CASE DIMENSIONS: millimeters inches Code EIA Code

mrf5s19060nr1

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF5S19060N Rev. 7, 10/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S19060NR1 MRF5S19060NBR1 Designed for broadband commercial and industrial applications with

MW4IC2230NB

Abstract: j631 marking j130 J242
Contextual Info: Freescale Semiconductor Technical Data Document Number: MW4IC2230 Rev. 4, 8/2005 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2230 wideband integrated circuit is designed for W - CDMA base station applications. It uses Freescale’s newest High Voltage 26 to 28 Volts

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF5S19060N Rev. 4, 8/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S19060NR1 MRF5S19060NBR1 MRF5S19060MR1 MRF5S19060MBR1 Designed for broadband commercial and industrial applications with

TAJ Automotive

Contextual Info: TAJ Automotive Range Standard Tantalum - Automotive Product Range TAJ AUTOMOTIVE RANGE CAPACITANCE AND RATED VOLTAGE RANGE LETTER DENOTES CASE SIZE Capacitance F Code 0.10 104 0.15 154 0.22 224 0.33 334 0.47 474 0.68 684 1.0 105 155 1.5 2.2 225 3.3 335

TAJ Automotive

Contextual Info: TAJ Automotive Range Standard Tantalum - Automotive Product Range FEATURES • General purpose SMT chip tantalum series • 5 case sizes available • CV range: 0.22-680 F / 6.3-50V CASE DIMENSIONS: MARKING Polarity Band Anode+ Code EIA Metric L±0.20 (0.008)

Contextual Info: GE Data Sheet KBVW006A0B Series Sixteenth-Brick DC-DC Converter Power Modules 36–75Vdc Input; 12.0Vdc Output; 6A Output Current BARRACUDA* SERIES RoHS Compliant Features • Wide input voltage range: 36-75 Vdc • Monotonic startup into prebiased load

A113

Abstract: A114 A115 AN1955 C101 JESD22 MRF5S19060N MRF5S19060NBR1 MRF5S19060NR1 MRF5S19060NB
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF5S19060N Rev. 7, 10/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S19060NR1 MRF5S19060NBR1 Designed for broadband commercial and industrial applications with

hatching machine

Abstract: 100B8R2CW A113 AN1987 MW4IC2230 MW4IC2230GMBR1 MW4IC2230MBR1 TAJD106K035
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MW4IC2230/D SEMICONDUCTOR TECHNICAL DATA The Wideband IC Line Freescale Semiconductor, Inc. RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2230 wideband integrated circuit is designed for W - CDMA base

A113

Abstract: AN1955 MRF5S19060MBR1 MRF5S19060MR1 MRF5S19060NBR1 MRF5S19060NR1
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S19060N/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF5S19060NR1 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFETs MRF5S19060NBR1

Contextual Info: TAJ Series Standard Tantalum • • • • General purpose SMT chip tantalum series 7 case sizes available Low profile options available CV range: 0.10-2200 F / 2.5-50V LEAD-FREE COMPATIBLE COMPONENT SnPb termination option is not RoHS compliant. CASE DIMENSIONS:

panasonic inverter dv 707 manual

Abstract: 018T A423 Mosfet FTR 03-E Arcotronics 1.27.6 nsl 7053 mkp DX 3500 manual Honeywell DBM 01A Polyester capacitors 823k 250V SPRAGUE powerlytic 36Dx sprague 68D
Contextual Info: PASSIVE COMPONENTS Resistors Networks and Arrays Bourns. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 590, 591, 592 Caddock . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 593 CTS. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 594

RM73Z2A000

Abstract: S9002 smd led 1210 IC vertical panasonic SLMA002 SLMA004 THS6052 PCS6105CT-ND
Contextual Info: THS6052 EVM User’s Guide August 2002 High Performance Linear Products SLOU138 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries TI reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue

AN1955

Abstract: 100B8R2CW A113 AN1977 AN1987 MW4IC2230GNBR1 MW4IC2230NBR1 TAJD106K035
Contextual Info: Freescale Semiconductor Technical Data Document Number: MW4IC2230N Rev. 6, 5/2006 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2230N wideband integrated circuit is designed for W - CDMA base station applications. It uses Freescale’s newest High Voltage 26 to 28

Contextual Info: THS6053EVM User’s Guide August 2002 High Performance Linear Products SLOU140 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries TI reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue

Contextual Info: THS6052 EVM User’s Guide August 2002 High Performance Linear Products SLOU138 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries TI reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue

smd transistor 6g

Abstract: 6G smd transistor s band POWER TRANSISTOR 2.7 3.1 3.5 GHZ nxp 544 200B BLS6G2731-6G TAJD106K035R transistor equivalent table sot975c radar circuit component
Contextual Info: BLS6G2731-6G LDMOS S-Band radar power transistor Rev. 01 — 19 February 2009 Product data sheet 1. Product profile 1.1 General description 6 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range. Table 1. Typical performance

Contextual Info: Freescale Semiconductor Technical Data Document Number: MW4IC2230N Rev. 6, 5/2006 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2230N wideband integrated circuit is designed for W - CDMA base station applications. It uses Freescale’s newest High Voltage 26 to 28

IM324

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF5S19060N Rev. 4, 8/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S19060NR1 MRF5S19060NBR1 MRF5S19060MR1 MRF5S19060MBR1 Designed for broadband commercial and industrial applications with

Contextual Info: TAJ Series Standard Tantalum The TAJ standard series encompasses the five key sizes recognized by major OEMs throughout the world. The V case size has been added to the TAJ range to allow high CVs to be offered. The operational temperature is -55°C to +85°C

TO272* APPLICATION

Contextual Info: Freescale Semiconductor Technical Data MW4IC2230 Rev. 3, 1/2005 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2230 wideband integrated circuit is designed for W−CDMA base station applications. It uses Freescale’s newest High Voltage 26 to 28 Volts