TAA 380 Search Results

H5128

Abstract: CY27H512
Contextual Info: PRELIMINARY Functional Description Features D D D D D Ċ Ċ Ċ Ċ High speed tAA = 25 ns max. commercial tAA = 35 ns max. (military) Low power 275 mW max. Less than 85 mW when deselected ByteĆwide memory organization 100% reprogrammable in the windowed package

LC 7258

Contextual Info: CYPRESS • CMOS for optimum speed/power • High speed — tAA = 25 ns max. com m ercial — tAA = 35 ns max. (military) • Low power — 275 mW max. — Less than 85 mW when deselected Byte-wide mem ory organization 100% reprogram m able in the windowed package

CY27H512-25JC

Abstract: CY27H512 CY27H512-25ZC 27H512-25 27H512-30 H5121 H5128
Contextual Info: 1CY 27H5 12 CY27H512 PRELIMINARY 64K x 8 High-Speed CMOS EPROM Features • CMOS for optimum speed/power • High speed — tAA = 25 ns max. commercial — tAA = 35 ns max. (military) • Low power — 275 mW max. — Less than 85 mW when deselected • Byte-wide memory organization

h2566

Abstract: H2567 H2563 H2565 H256 H2568 H256-4 CY27H256 CY27H256-25JC CY27H256-25ZC
Contextual Info: fax id: 3014 1CY 27H2 56 CY27H256 32K x 8 High-Speed CMOS EPROM Features • CMOS for optimum speed/power • High speed — tAA = 25 ns max. commercial — tAA = 35 ns max. (military) • Low power — 275 mW max. — Less than 85 mW when deselected • Byte-wide memory organization

C520

Abstract: ar1318 CY27H512 CY27H512-25JC CY27H512-25ZC CY27H512-30JC
Contextual Info: ,.V. Ï. Ï. V. ^ynr' Æ CYPRESS • CMOS fo r optimum speed/power • High speed — tAA = 25 ns max. comm ercial — tAA = 35 ns max. (military) • Low power — 275 mW max. — Less than 85 mW when deselected Byte-wide memory organization 100% reprogramm able in the windowed package

Contextual Info: 7C101A: 11-25-91 Revision: Thursday, February 18,1993 CY7C101A CY7C102A k ' Vwt S3 « 3 PRELIMINARY 7J= CYPRESS SEMICONDUCTOR 256K x 4 Static RAM with Separate I/O Features Functional Description • Highspeed — tAA = 12 ns • Transparent write 7C101A

CY7C1018BV33

Abstract: CY7C1018CV33 CY7C1018CV33-10VC CY7C1018CV33-12VC CY7C1018CV33-12VXI CY7C1018CV33-15VXC
Contextual Info: CY7C1018CV33 128K x 8 Static RAM Features device has an automatic power-down feature that significantly reduces power consumption when deselected. • Pin- and function-compatible with CY7C1018BV33 • High speed — tAA = 10 ns • CMOS for optimum speed/power

4kx4 ram

Abstract: CY7C168A 7C168A 7C168A-45
Contextual Info: CY7C168A 4Kx4 RAM Features Functional Description • Automatic power-down when deselected • CMOS for optimum speed/power • High speed — tAA = 15 ns • Low active power — 633 mW • Low standby power — 110 mW • TTL-compatible inputs and outputs

Contextual Info: CYPRESS MbE SEMICONDUCTOR BSö^bba aaati7Gt. 3 D CY7C1009 ADVANCED INFORMATION “ CYPRESS SEMICONDUCTOR 128K x 8 Static R/W RAM Functional Description Features • Highspeed — tAA = 15 ns • CMOS for optimum speed/power • Low active power — 825 mW

Contextual Info: CY7C1018CV33 128K x 8 Static RAM Features device has an automatic power-down feature that significantly reduces power consumption when deselected. • Pin- and function-compatible with CY7C1018BV33 • High speed — tAA = 8, 10, 12, 15 ns • CMOS for optimum speed/power

27C010A

Contextual Info: CYPRESS CY27C010 ADVANCED INFORMATION 128K x 8 CMOS EPROM Features Functional Description • CMOS for optimum speed/power • High speed — tAA - 70 ns max. • Low power — 220 mW max. — Less than 85 mW when deselected • Byte-wide memory organization

CY7C1018BV33

Abstract: CY7C1018CV33 CY7C1018CV33-8VC
Contextual Info: CY7C1018CV33 128K x 8 Static RAM Features device has an automatic power-down feature that significantly reduces power consumption when deselected. • Pin and function compatible with CY7C1018BV33 • High speed — tAA = 8, 10, 12, 15 ns • CMOS for optimum speed/power

Contextual Info: THIS SPEC IS OBSOLETE Spec No: 38-05131 Spec Title: CY7C1018CV33 128K X 8 STATIC RAM Sunset Owner: Prashanth Jnanendra pras Replaced by: NONE CY7C1018CV33 128K x 8 Static RAM Features • Pin- and function-compatible with CY7C1018BV33 • High speed — tAA = 10 ns

Contextual Info: PRELIMINARY CYPRESS CY7C1199 32K X 8 Static RAM three-state drivers. This device has an automatic power-down feature, that reduces the power consumption significantly when deselected. Features • High speed — 15 ns tAA • Single 5V power supply with 3.3V-compatible l/Os

c1826

Abstract: c1827 c1823 C182 CY7C182 R1481
Contextual Info: CY7C182 8Kx9 Static RAM Features • High speed — tAA = 25 ns • x9 organization is ideal for cache memory applications • CMOS for optimum speed/power • Low active power — 770 mW • Low standby power — 195 mW • TTL-compatible inputs and outputs

C1061

Abstract: CY7C1061 C106A transistor c106 C106 CY7C1006 CY7C106 C1066 C1065 C1062
Contextual Info: CY7C106 CY7C1006 256K x 4 Static RAM Features an active LOW output enable OE , and three-state drivers. These devices have an automatic power-down feature that reduces power consumption by more than 65% when the devices are deselected. • High speed — tAA = 12 ns

7C1019BV33-10

Abstract: 7C1019BV33-12 7C1019BV33-15 CY7C1019BV33 CY7C1019BV33-10VC CY7C1019V33
Contextual Info: 3 CY7C1019BV33 128K x 8 Static RAM Features • High speed — tAA = 10 ns • CMOS for optimum speed/power • Center power/ground pinout • Automatic power-down when deselected • Easy memory expansion with CE and OE options • Functionally equivalent to CY7C1019V33

Contextual Info: CY7C1062DV33 16-Mbit 512 K x 32 Static RAM 16-Mbit (512 K × 32) Static RAM Features Functional Description • High speed ❐ tAA = 10 ns The CY7C1062DV33 is a high performance CMOS Static RAM organized as 524,288 words by 32 bits. ■ Low active power

7C168A

Abstract: CY7C168A CY7C168A-20VC
Contextual Info: 69A CY7C168A 4Kx4 RAM Features Functional Description • Automatic power-down when deselected • CMOS for optimum speed/power • High speed — tAA = 15 ns • Low active power — 633 mW • Low standby power — 110 mW • TTL-compatible inputs and outputs

Contextual Info: CY7C106D CY7C1006D 1-Mbit 256K x 4 Static RAM Functional Description [1] Features • Pin- and function-compatible with CY7C106B/CY7C1006B • High speed — tAA = 10 ns • Low active power — ICC = 80 mA @ 10 ns • Low CMOS standby power — ISB2 = 3.0 mA

Contextual Info: 7C1009: 1 1 -2 5 -9 1 Revision: Monday, January 11,1993 — ^ MAR S 3 1993 PRELIMINARY CYPRESS SEMICONDUCTOR CY7C1009 128Kx 8 Static RAM Features Functional Description • Highspeed — tAA = 12 ns • CMOS for optimum speed/power • Low active power — 1020 mW

CY7C1512-25SC

Abstract: CY7C1512 CY7C1512-15SC CY7C1512-15ZC CY7C1512-20SC CY7C1512-20ZI 7C1512
Contextual Info: PRELIMINARY CY7C1512 64K x 8 Static RAM Features • High speed — tAA = 15 ns • CMOS for optimum speed/power • Low active power — 770 mW • Low standby power — 28 mW • Automatic power-down when deselected • TTL-compatible inputs and outputs

Contextual Info: CY7C1062DV33 16-Mbit 512 K x 32 Static RAM 16-Mbit (512 K × 32) Static RAM Features Functional Description • High speed ❐ tAA = 10 ns The CY7C1062DV33 is a high performance CMOS Static RAM organized as 524,288 words by 32 bits. ■ Low active power

7c17

Abstract: CY7C171A CY7C172A C171A
Contextual Info: 1CY 7C17 2A CY7C171A CY7C172A 4K x 4 Static RAM with Separate I/O Features Functional Description • Automatic power-down when deselected • CMOS for optimum speed/power • High speed — tAA = 15 ns • Transparent write 7C171A • Low active power — 375 mW