TAA 2761 Search Results

2800-121

Contextual Info: CY7C1061DV18 16-Mbit 1M X 16 Static RAM Features Functional Description • High Speed ❐ tAA = 15 ns The CY7C1061DV18 is a high performance CMOS Static RAM (SRAM) organized as 1,048,576 words by 16 bits. ■ Low Active Power ❐ ICC = 150 mA at 15 ns ■

CY7C1061

Contextual Info: CY7C1061DV18 16-Mbit 1 M x 16 Static RAM Features Functional Description • High Speed ❐ tAA = 15 ns The CY7C1061DV18 is a high performance CMOS Static RAM (SRAM) organized as 1,048,576 words by 16 bits. ■ Low Active Power ❐ ICC = 150 mA at 67 MHz

CY7C1061

Contextual Info: CY7C1061DV18 16-Mbit 1 M x 16 Static RAM Features Functional Description • High Speed ❐ tAA = 15 ns The CY7C1061DV18 is a high performance CMOS Static RAM (SRAM) organized as 1,048,576 words by 16 bits. ■ Low Active Power ❐ ICC = 150 mA at 15 ns

Contextual Info: CY7C1061DV18 16-Mbit 1 M x 16 Static RAM 16-Mbit (1 M × 16) Static RAM Features Functional Description • High Speed ❐ tAA = 15 ns The CY7C1061DV18 is a high performance CMOS Static RAM (SRAM) organized as 1,048,576 words by 16 bits. ■ Low Active Power

CY7C

Abstract: CY7C1019BV33 CY7C1019CV33 CY7C1019CV33-10ZXA
Contextual Info: CY7C1019CV33 1 Mbit 128K x 8 Static RAM Features Functional Description n Temperature Ranges p Industrial: –40°C to 85°C p Automotive-A: –40°C to 85°C n Pin and Function compatible with CY7C1019BV33 n High Speed p tAA = 10 ns The CY7C1019CV33 is a high performance CMOS static RAM

SAS 251

Abstract: 4580d tda 2022 Tda 865 TDA 7650 CPA 7660 cmo 765 TAA 2761 A TCA4510 TAA761A
Contextual Info: 1:UNKAMATEUR-Bauelementeinformation IS Vergleichslisten für integrierte Schaltkreise DDR/international IS für den Einsatz in Rundfunkempfängern und Recordern DDR-Typ Vergleichstyp Beschreibung DDR-Typ Vergleichstyp Beschreibung A 202 D A 22SD A 244 D/SD

IC 741 OPAMP

Abstract: SAA 1251 7106CPL TDA2620 SAA1121 LM 4440 AUDIO AMPLIFIER CIRCUIT touch dimmer TC 306H TDA 2310 TDA 2060 7107CPL
Contextual Info: Lineaire IC’s Lineaire IC’s dil to 99 dil 8 to 99 dil 18 to 78 to 99 dil 20 to 99 cer dip to 78 Wij leveren een groot aantal lineaire ic's uit voorraad. Kunt u een bepaald type niet vinden, aarzel dan niet ons telefonisch te raadplegen. Veelal kunnen wij u op korte

MD 202

Abstract: MW SW front END SW 3395 6V TAA 621 applications 13831 epos Electronics TAA 521 A TEXAS CT 306 AS7C1025 AS7C31025
Contextual Info: High Performance 128Kx8 CMOS SRAM AS7C1025 AS7C31025 128K×8 CMOS SRAM Common I/O Preliminary information Features • Organization: 131,072 words × 8 bits • High speed - 10/12/15/20 ns address access time - 3/3/4/5 ns output enable access time • Low power consumption

TAA 621 applications

Abstract: TAA 521 A taa 621 63RD MD 202 Concord Electronics SW 3395 6V TAA 761 A AS7C3513 AS7C513
Contextual Info: High Performance 32Kx16 CMOS SRAM AS7C513 AS7C3513 32K×16 CMOS SRAM Advance information Features • Organization: 32,768 words × 16 bits • High speed - 12/15/20 ns address access time - 6/8/10 ns output enable access time • Low power consumption

TAA 621

Abstract: MD 202 TAA 621 applications AS7C1026-15JC AS7C1026 AS7C31026 7C1026 AS7C31026-25JC AS7C1026-25JC J-Squared Technologies
Contextual Info: High Performance 64Kx16 CMOS SRAM AS7C1026 AS7C31026 64K×16 CMOS SRAM Preliminary information Features • Organization: 65,536 words × 16 bits • High speed - 12/15/20/25 ns address access time - 6/8/10/12 ns output enable access time • Low power consumption

Contextual Info: Integrate d Device Technology, Inc. HIGH-SPEED BiCMOS ECL STATIC RAM 256K 64K x 4-BIT SRAM IDT10504 IDT100504 IDT101504 FEATURES: DESCRIPTION: • • • • • • • The IDT10504, IDT100504 and IDT101504 are 262,144bit high-speed BiCEMOS ECL static random access

AN1064

Contextual Info: CY62148VN MoBL 4 Mbit 512K x 8 Static RAM Features applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption by 99 percent when addresses are not toggling. The device can be put into standby mode when deselected (CE

Contextual Info: THIS SPEC IS OBSOLETE Spec No: 001-55636 Spec Title: CY62148VN MOBL R , 4 MBIT (512K X 8) STATIC RAM Sunset Owner: Ramesh Raghavan (RAME) Replaced by: None CY62148VN MoBL 4 Mbit (512K x 8) Static RAM Features applications such as cellular telephones. The device also has an

Contextual Info: CY62148VN MoBL 4 Mbit 512K x 8 Static RAM Features applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption by 99 percent when addresses are not toggling. The device can be put into standby mode when deselected (CE

CY7C1019CV33-10ZXA

Abstract: CY7C1019BV33 CY7C1019CV33 CY7C1019CV33-12ZXC CY7C1019CV33-15VXC
Contextual Info: CY7C1019CV33 1 Mbit 128K x 8 Static RAM Features Functional Description • Temperature Ranges ❐ Industrial: –40°C to 85°C ❐ Automotive-A: –40°C to 85°C The CY7C1019CV33 is a high performance CMOS static RAM organized as 131,072 words by 8 bits. Easy memory expansion

Contextual Info: CY7C1019CV33 1-Mbit 128 K x 8 Static RAM 1-Mbit (128 K × 8) Static RAM Features Functional Description • Temperature Ranges ❐ Industrial: –40 °C to 85 °C ❐ Automotive-A: –40 °C to 85 °C ■ Pin and Function compatible with CY7C1019BV33 ■

Contextual Info: CY7C1019CV33 1-Mbit 128 K x 8 Static RAM 1-Mbit (128 K × 8) Static RAM Features Functional Description • Temperature Ranges ❐ Industrial: –40 °C to 85 °C ❐ Automotive-A: –40 °C to 85 °C ■ Pin and Function compatible with CY7C1019BV33 ■

Contextual Info: CY7C1019CV33 1 Mbit 128K x 8 Static RAM Features Functional Description • Temperature Ranges ❐ Industrial: –40°C to 85°C ❐ Automotive-A: –40°C to 85°C The CY7C1019CV33 is a high performance CMOS static RAM organized as 131,072 words by 8 bits. Easy memory expansion

k3882

Abstract: TAA 981 E25C5 TC8066PB sn 8400 sn 8408 selen-gleichrichter Halbleiterbauelemente DDR A109D SY 170
Contextual Info: [ n r D D lk D ^ i^ B lB k f a n a n ilK Halbleiter-Bauelemente Kurzinformation D ie M ik ro e le k tro n ik e rw e is t sich in te rn a tio n a l m e h r u n d m eh r a ls e in e n ts c h e id e n d e r F a k to r be i d e r D u rc h s e tz u n g d e s w isse n s c h a ftlic h -te c h n is c h e n F o rts c h ritte s a lle r B ere ich e d e r W irts c h a ft un d

Contextual Info: CY7C1019CV33 1-Mbit 128 K x 8 Static RAM 1-Mbit (128 K × 8) Static RAM Features Functional Description • Temperature Ranges ❐ Industrial: –40 °C to 85 °C ❐ Automotive-A: –40 °C to 85 °C ■ Pin and Function compatible with CY7C1019BV33 ■

CY7C1019BV33

Abstract: CY7C1019CV33 CY7C1019CV33-10VC CY7C1019CV33-10ZXA CY7C1019CV33-10ZXC CY7C1019CV33-10ZXI CY7C1019CV33-12VC CY7C1019CV33-12ZC CY7C1019CV33-15VC
Contextual Info: CY7C1019CV33 1 Mbit 128K x 8 Static RAM Features Functional Description • Temperature Ranges ❐ Industrial: –40°C to 85°C ❐ Automotive-A: –40°C to 85°C The CY7C1019CV33 is a high performance CMOS static RAM organized as 131,072 words by 8 bits. Easy memory expansion

AH51

Abstract: BT41 type bb12 and/transistor ah51
Contextual Info: v a TÀIYO M • FERRITE CORES/MAGNETS FER R ITE CORES BEAD TYPE gP < .394 in. Part tomber IR A H H B B RING CORES IN CASES and CLAMPS aD > .394 in. 10 mm OD < 394 in. (10 mm) Dimensions In.Amm) 0D L id .024-.118 .098-. 157 .028-.079 (0 6 -3 .0 ) (2.5-4.0)

Contextual Info: 16 Mbit Concurrent SuperFlash SST36VF1601 SST36VF16012.7V 16Mb x16 Concurrent SuperFlash Data Sheet FEATURES: • Organized as 1M x16 • Dual Bank Architecture for Concurrent Read/Write Operation – 16 Mbit Bottom Sector Protection - SST36VF1601: 12 Mbit + 4 Mbit

f333

Abstract: SST36VF1601 2F312 F2311
Contextual Info: 16 Mbit Concurrent SuperFlash SST36VF1601 SST36V160116Mb x16 Concurrent SuperFlash Data Sheet FEATURES: • Organized as 1M x16 • Dual Bank Architecture for Concurrent Read/Write Operation – 16 Mbit Bottom Sector Protection - SST36VF1601: 12 Mbit + 4 Mbit