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TA9845 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
RFP22N10 Contextual Info: RFP22N10, RF1S22N10, RF1S22N10SM S E M I C O N D U C T O R 22A, 100V, 0.080 Ohm, N-Channel Power MOSFETs April 1998 Features Description • 22A, 100V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature	Original	rfp22n10 rf1s22n10 rf1s22n10sm ta9845 +11-800-4-harris	PDF
RFP22N10 Abstract: RF1S22N10SM RF1S22N10SM9A TB334 Contextual Info: RFP22N10, RF1S22N10SM Data Sheet 22A, 100V, 0.080 Ohm, N-Channel Power MOSFETs These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding	Original	rfp22n10 rf1s22n10sm rf1s22n10sm9a tb334	PDF
RFP22N10 Contextual Info: RFP22N10, RF1S22N10SM Data Sheet Title FP2 10, 1S2 10S bt A, 0V, 80 m, anwer OSTs utho eyrds ter- July 1999 22A, 100V, 0.080 Ohm, N-Channel Power MOSFETs Features These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature	Original	rfp22n10 rf1s22n10sm 175oc tb334	PDF
RFP22N10 Abstract: RF1S22N10SM RF1S22N10SM9A TB334 F1S22N10 Contextual Info: RFP22N10, RF1S22N10SM Data Sheet 22A, 100V, 0.080 Ohm, N-Channel Power MOSFETs These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding	Original	rfp22n10 rf1s22n10sm rf1s22n10sm9a tb334 +1f1s22n10	PDF
65e9 transistor Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note Contextual Info: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 \| \| ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12	Original	1-888-intersil ms-012aa mo-153aa rf1k49090 +16rf1k49093 rf1k49092 itf87056dqt itf87072dk8t itf87008dqt rf1k49223 65e9 transistor transistor 75307d transistor 65e8 sd mosfet drive datasheet 4468 8 pin g40n60 rhr15120 equivalent 10n120bnd 76107d transistor 76121d emerson three phase dc motor driver service note	PDF
RFP22N10 Contextual Info: RFP22N10, RF1S22N10SM i n t e f s i l D a ta S h e e t , 22A, 100V, 0.080 Ohm N-Channel Power MOSFETs These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives	OCR Scan	rfp22n10 rf1s22n10sm ta9845 080c1	PDF
RFP22N10 Abstract: TA9845 Contextual Info: ASSESS? RFP22N10, RF1S22N10, RF1S22N10SM 22A, 100V, 0.080 Ohm, N-Channel Power MOSFETs Aprii 1998 Description Features 22A,100V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives opti	OCR Scan	rfp22n10 rf1s22n10 rf1s22n10sm o-263ab +1ta9845	PDF
RFP22N10 Abstract: TB334 RF1S22N10SM RF1S22N10SM9A Contextual Info: RFP22N10, RF1S22N10SM Data Sheet 22A, 100V, 0.080 Ohm, N-Channel Power MOSFETs These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding	Original	rfp22n10 rf1s22n10sm tb334 rf1s22n10sm9a	PDF