IRF350
Abstract: IRF350 and its equivalent TB334 TA9399
Contextual Info: IRF350 Data Sheet March 1999 15A, 400V, 0.300 Ohm, N-Channel Power MOSFET Features This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers,
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irf350ta9399irf350 and its equivalenttb334 |
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RFH12N35
Abstract: RFH12N40 RFM12N35 RFM12N40 RFH12N
Contextual Info: Gl De J BÛ7SGÔ1 O O l ö l t i l 0 3875081 G E SOLID STATE 01E Standard Power MOSFETs 18161 _ File Number 1630 RFH12N35, RFH12N40 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors TERMINAL DIAGRAM
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rfh12n35rfh12n407sd01rfm12n35+3rfm12n409zcs-57236rfh12n
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RFM12N40
Abstract: RFM12 B RFM12N35
Contextual Info: Standard Power MOSFETs — RFM12N35, RFM12N40 File Number 1787 N-Channel Enhancement-Mode Power Field-Effect Transistors 12 A, 350 V - 4 0 0 V N-CHANNEL ENHANCEMENT MODE rDs on = 0 .5 O Features: • SOA is power-dissipation lim ited ■ Nanosecond sw itching speeds
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rfm12n35rfm12n40an-7254an-7260+592cs-3723692cs-3723792cs-3723892cs-37239rfm12 b
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IRF350
Contextual Info: IRF350, IRF351, IRF352, IRF353 S e m iconductor October 1998 Data Sheet 13A and 15A, 350V and 400V, 0.300 and 0.400 Ohm, N-Channel Power MOSFETs These are N-Channel enhancem ent mode silicon gate power field effect transistors designed for applications such
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irf350irf351irf352irf353 |
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