TA76131 Search Results

Contextual Info: HUF76132SK8 Data Sheet September 1999 11.5A, 30V, 0.0115 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Title UF7 32S bt .5A 0V, 115 m, an, gic vel raF wer OST) utho • Logic Level Gate Drive • 11.5A, 30V • Simulation Models - Temperature Compensated PSPICE and SABER∏

AN7254

Abstract: AN9321 AN9322 HUF76132SK8 HUF76132SK8T MS-012AA TB334
Contextual Info: HUF76132SK8 Data Sheet January 2003 11.5A, 30V, 0.0115 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the

AN9321

Abstract: AN9322 HUF76131SK8 HUF76131SK8T MS-012AA TB334
Contextual Info: HUF76131SK8 Semiconductor Data Sheet November 1998 10A, 30V, 0.013 Ohm, N-Channel, Logic Level UltraFET Power MOSFET • Logic Level Gate Drive • 10A, 30V • Ultra Low On-Resistance, rDS ON = 0.013Ω • Temperature Compensating PSPICE Model • Thermal Impedance SPICE Model

Contextual Info: HUF76132SK8 Semiconductor Data Sheet June 1999 11.5A, 30V, 0.0115 Ohm, N-Channel, Logic Level UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in

AN7254

Abstract: AN9321 AN9322 HUF76132SK8 HUF76132SK8T MS-012AA TB334
Contextual Info: HUF76132SK8 Data Sheet September 1999 11.5A, 30V, 0.0115 Ohm, N-Channel, Logic Level UltraFET Power MOSFET • Logic Level Gate Drive • 11.5A, 30V • Simulation Models - Temperature Compensated PSPICE and SABER Electrical Models - Spice and SABER Thermal Impedance Models

Contextual Info: HUF76131SK8 S E M I C O N D U C T O R 10A, 30V, 0.013 Ohm, N-Channel, Logic Level UltraFET Power MOSFET April 1998 Features Description • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in

Contextual Info: HUF76131SK8 Data Sheet June 2000 10A, 30V, 0.013 Ohm, N-Channel, Logic Level UltraFET Power MOSFET File Number 4396.5 Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the

61E2

Contextual Info: HUF76131SK8 November 1998 Data Sheet 10A, 30V, 0.013 Ohm, N-Channel, Logic Level UltraFET Power MOSFET File Number 4396.3 Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative w UltraFET process. This advanced

Contextual Info: HUF76131SK8 Data Sheet June 2000 10A, 30V, 0.013 Ohm, N-Channel, Logic Level UltraFET Power MOSFET File Number 4396.5 Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the

65e9 transistor

Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Contextual Info: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12

intersil 76131SK8

Abstract: AN9321 HUF76131SK8 HUF76131SK8T MS-012AA TB334
Contextual Info: HUF76131SK8 TM Data Sheet June 2000 10A, 30V, 0.013 Ohm, N-Channel, Logic Level UltraFET Power MOSFET File Number 4396.5 Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced

1773C

Contextual Info: in te r r ii HUF76131SK8 D a ta S h e e t S e p te m b e r 1999 10A, 30V, 0.013 Ohm, N-Channel, Logic Level UltraFET Power MOSFET F ile N u m b e r Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced

TA7613

Abstract: AN9321 AN9322 HUF76131SK8 HUF76131SK8T MS-012AA TB334
Contextual Info: HUF76131SK8 Data Sheet December 2001 10A, 30V, 0.013 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the

AN7254

Abstract: AN9321 AN9322 HUF76132SK8 HUF76132SK8T MS-012AA TB334
Contextual Info: HUF76132SK8 Data Sheet December 2001 11.5A, 30V, 0.0115 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the

Contextual Info: in te r r ii HUF76132SK8 D a ta s h e e t S e p te m b e r 1999 11.5A, 30V, 0.0115 Ohm, N-Channel, Logic Level UltraFET Power M O SFET This N-Channel power M O S F E T is manufactured using the innovative UltraFET process. This advanced process technology achieves the

AN9321

Abstract: AN9322 HUF76131SK8 HUF76131SK8T MS-012AA TB334
Contextual Info: HUF76131SK8 Data Sheet January 2003 10A, 30V, 0.013 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the