TA49222 Search Results

2P03L

Abstract: 2p03 RFT2P03L TB334 73E-10
Contextual Info: RFT2P03L Data Sheet January 2002 2.1A, 30V, 0.150 Ohm, P-Channel Logic Level, Power MOSFET Features • 2.1A, 30V • rDS ON = 0.150Ω This product is a P-Channel power MOSFET manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives

Contextual Info: RFT2P03L Data Sheet January 2002 2.1A, 30V, 0.150 Ohm, P-Channel Logic Level, Power MOSFET Features • 2.1A, 30V • rDS ON = 0.150Ω This product is a P-Channel power MOSFET manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives

Contextual Info: RFT2P03L Semiconductor October 1998 Data Sheet 2.1 A, 30 V, 0.150 Ohm, P-Channel Logic Level, Power MOSFET File Number 4574.1 Features • 2.1 A, 30V This product is a P-Channel power M O S F E T manufactured • r DS ON = 0 .1 5 0 i2 using the M eg aF E T process. This process, which uses

2P03L

Abstract: 73E-10 73E10 TRANSISTOR S2A RFT2P03L TB334 diode 7723
Contextual Info: RFT2P03L Data Sheet July 1999 2.1A, 30V, 0.150 Ohm, P-Channel Logic Level, Power MOSFET Features This product is a P-Channel power MOSFET manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives

2P03L

Abstract: 2p03
Contextual Info: RFT2P03L Semiconductor Data Sheet October 1998 2.1A, 30V, 0.150 Ohm, P-Channel Logic Level, Power MOSFET Features This product is a P-Channel power MOSFET manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives