TA49157 Search Results

Contextual Info: in te la i I RF1K49157 Data Sheet A u g u st 1999 6.3A, 30V, 0.030 Ohm, Single N-Channel LittleFET Power MOSFET This Single N-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated

63a30

Abstract: RF1K4915796
Contextual Info: HH BF1K49157 H A R R IS S E M I C O N D U C T O R ^ Rated, Single N-Channel JXl&tëFÉt Enhancement Mode Power MOSFET 'no* ne V* January 1997 4- ¡V OÏ v ' Features Description • 6.3A.30V The RF1K49157 Single N-Channel power MOSFET is manufactured using an advanced MegaFET process. This

Contextual Info: R F1K 49157 h a r r is S E M I C O N D U C T O R # fl f « f l % W fl # 6.3A, 30V, Avalanche Rated, Single N-Channel LittleFET Enhancement Mode Power MOSFET January 1997 Features Description • 6.3A, 30V The RF1K49157 Single N-Channel power MOSFET is manufactured using an advanced MegaFET process. This

RF1K4915796

Abstract: AN7254 AN9321 AN9322 MS-012AA RF1K49157 TB334 0237E-9
Contextual Info: RF1K49157 Data Sheet January 2002 6.3A, 30V, 0.030 Ohm, Single N-Channel LittleFET Power MOSFET Features • 6.3A, 30V This Single N-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated

65e9 transistor

Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Contextual Info: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12

RF1K4915796

Abstract: AN7254 AN7260 AN9321 AN9322 MS-012AA RF1K49157 211E-3 262E-9
Contextual Info: RF1K49157 S E M I C O N D U C T O R 6.3A, 30V, Avalanche Rated, Single N-Channel LittleFET Enhancement Mode Power MOSFET January 1997 Features Description • 6.3A, 30V The RF1K49157 Single N-Channel power MOSFET is manufactured using an advanced MegaFET process. This

AN7254

Abstract: AN9321 AN9322 MS-012AA RF1K49157 RF1K4915796 TB334
Contextual Info: RF1K49157 Data Sheet August 1999 6.3A, 30V, 0.030 Ohm, Single N-Channel LittleFET Power MOSFET File Number 4012.5 Features • 6.3A, 30V This Single N-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated

Contextual Info: RF1K49157 Data Sheet August 1999 6.3A, 30V, 0.030 Ohm, Single N-Channel LittleFET Power MOSFET 4012.5 Features • 6.3A, 30V Title This Single N-Channel power MOSFET is manufactured F1K4 using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated